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    Chemical vapor deposition apparatus
    1.
    发明授权
    Chemical vapor deposition apparatus 有权
    化学气相沉积装置

    公开(公告)号：US06197121B1

    公开(公告)日：2001-03-06

    申请号：US09345032

    申请日：1999-06-30

    申请人： Alexander I. Gurary ,  Richard A. Stall ,  Robert F. Karlicek, Jr. ,  Peter Zawadzki ,  Thomas Salagaj

    发明人： Alexander I. Gurary ,  Richard A. Stall ,  Robert F. Karlicek, Jr. ,  Peter Zawadzki ,  Thomas Salagaj

    IPC分类号： C23C1600

    CPC分类号： C23C16/45574 ,  C23C16/45514 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45591 ,  C23C16/4584 ,  C30B25/14

    摘要： Reactors for growing epitaxial layers on substrates are disclosed including rotatable substrate carriers and injectors for injecting gases into the reactor towards the substrates on the carriers and including a gas separator for separately maintaining various gases between gas inlets and the injector. Various reactor embodiments are disclosed including removable gas separators, and particular injectors which include cooling channels, as well as flow restrictors mounted within the reactors to restrict the flow of the gases to the substrates from the injector, and heaters mounted within the rotatable shell holding the substrate carriers so that the heaters can be accessed and removed through a lid forming a wall of the reactor.

    摘要翻译： 公开了用于在衬底上生长外延层的反应器，其包括可转动的衬底载体和用于将气体注入载体上的衬底的反应器的喷射器，并且包括用于分别保持气体入口和注射器之间的各种气体的气体分离器。 公开了各种反应器实施方案，包括可移除的气体分离器和包括冷却通道的特定注射器以及安装在反应器内的限流器，以限制从喷射器流到基板的气体，以及安装在可旋转外壳内的加热器， 衬底载体，使得可以通过形成反应器的壁的盖子来访问和移除加热器。

    Wafer carriers for epitaxial growth processes
    2.
    发明授权
    Wafer carriers for epitaxial growth processes 失效
    用于外延生长工艺的晶圆载体

    公开(公告)号：US6001183A

    公开(公告)日：1999-12-14

    申请号：US723682

    申请日：1996-09-30

    申请人： Alexander I. Gurary ,  Eric A. Armour ,  Douglas A. Collins ,  Richard A. Stall

    发明人： Alexander I. Gurary ,  Eric A. Armour ,  Douglas A. Collins ,  Richard A. Stall

    IPC分类号： C23C16/458 ,  C23C16/46 ,  C30B25/12 ,  C23C16/00

    CPC分类号： C23C16/4584 ,  C23C16/46 ,  C30B25/12

    摘要： A wafer carrier/susceptor combination for use in an epitaxial deposition process has a configuration which provides greater thermal conductivity between the susceptor and the wafer carrier in regions substantially underlying the wafers than in regions not underlying the wafers. This difference in thermal conductivity is produced by configuring the wafer carrier or susceptor so that the lower surface of the wafer carrier is disposed closer to the susceptor in regions substantially underlying the wafers than in at least some regions not underlying the wafers. By controlling the thermal conductivity so that it is greater in certain regions than in other regions, the temperature difference between the wafers and the surface of the wafer carrier can be reduced, and a more uniform temperature distribution across the surface of the wafer can be achieved. As a result, the combination may be used to deposit a more uniform coating across the entire surface of each wafer.

    摘要翻译： 在外延沉积工艺中使用的晶片载体/基座组合具有这样一种构造，其在基底在晶片下方的区域中在不在晶片下方的区域中在基座和晶片载体之间提供更大的导热性。 通过配置晶片载体或基座来产生这种热导率的差异，使得晶片载体的下表面在不在晶片下方的至少一些区域内的基本上位于晶片下方的区域中更靠近基座。 通过控制热导率使其在某些区域比其他区域更大，可以减小晶片和晶片载体表面之间的温度差，并且可以实现跨晶片表面的更均匀的温度分布 。 结果，该组合可用于在每个晶片的整个表面上沉积更均匀的涂层。

    WAFTER CARRIER FOR CHEMICAL VAPOR DEPOSITION SYSTEMS
    5.
    发明申请
    WAFTER CARRIER FOR CHEMICAL VAPOR DEPOSITION SYSTEMS 审中-公开
    化学气相沉积系统的WAFTER载体

    公开(公告)号：US20130276704A1

    公开(公告)日：2013-10-24

    申请号：US13450062

    申请日：2012-04-18

    申请人： Sandeep Krishnan ,  Jeffrey Scott Montgomery ,  Lukas Urban ,  Alexander I. Gurary ,  Yuliy Rashkovsky

    发明人： Sandeep Krishnan ,  Jeffrey Scott Montgomery ,  Lukas Urban ,  Alexander I. Gurary ,  Yuliy Rashkovsky

    IPC分类号： C23C16/458 ,  C23C16/46 ,  B23P17/00

    CPC分类号： C23C16/4584 ,  Y10T29/49826

    摘要： A wafer carrier for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. Each pocket includes a floor surface and a peripheral wall surface surrounding the floor surface and defining a periphery of that pocket. Each pocket has a center situated along a corresponding wafer carrier radial axis. In each of the pockets, a set of bumpers is positioned primarily at a distal portion of the wafer retention pocket opposite the central axis so as to maintain a gap of at least a predefined size between the peripheral wall surface at the distal portion and an edge of a wafer to be placed in the wafer retention pocket.

    摘要翻译： 一种晶片载体，用于通过化学气相沉积在一个或多个晶片上生长外延层的系统。 晶片载体包括凹入其体内的晶片保留孔。 每个口袋包括地板表面和围绕地板表面的周边壁表面并且限定该口袋的周边。 每个口袋具有沿对应的晶片载体径向轴线定位的中心。 在每个口袋中，一组保险杠主要定位在晶片保持袋的与中心轴线相对的远端部分处，以便在远端部分的周壁表面和边缘之间保持至少预定尺寸的间隙 的晶片被放置在晶片保持口袋中。

    WAFER CARRIER WITH HUB
    6.
    发明申请
    WAFER CARRIER WITH HUB 失效
    带框架的拖车

    公开(公告)号：US20110287635A1

    公开(公告)日：2011-11-24

    申请号：US13188605

    申请日：2011-07-22

    申请人： Vadim Boguslavskiy ,  Alexander I. Gurary

    发明人： Vadim Boguslavskiy ,  Alexander I. Gurary

    IPC分类号： H01L21/302

    CPC分类号： C23C16/4581 ,  C23C16/4584 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

    摘要： A wafer carrier for a rotating disc CVD reactor includes a unitary plate of a ceramic such as silicon carbide defining wafer-holding features such as pockets on its upstream surface and also includes a hub removably mounted to the plate in a central region of the plate. The hub provides a secure connection to the spindle of the reactor without imposing concentrated stresses on the ceramic plate. The hub can be removed during cleaning of the plate.

    摘要翻译： 用于旋转圆盘CVD反应器的晶片载体包括诸如碳化硅的陶瓷的整体板，其限定晶片保持特征，例如其上游表面上的凹穴，并且还包括可拆卸地安装到板的中心区域中的毂。 轮毂提供与反应器主轴的牢固连接，而不会在陶瓷板上产生集中应力。 在清洁板时可以拆下轮毂。

    Wafer carrier with hub
    7.
    发明申请
    Wafer carrier with hub 失效
    带轮毂的晶圆架

    公开(公告)号：US20090155028A1

    公开(公告)日：2009-06-18

    申请号：US12001761

    申请日：2007-12-12

    申请人： Vadim Boguslavskiy ,  Alexander I. Gurary

    发明人： Vadim Boguslavskiy ,  Alexander I. Gurary

    IPC分类号： B65H1/00

    CPC分类号： C23C16/4581 ,  C23C16/4584 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

    摘要： A wafer carrier for a rotating disc CVD reactor includes a unitary plate of a ceramic such as silicon carbide defining wafer-holding features such as pockets on its upstream surface and also includes a hub removably mounted to the plate in a central region of the plate. The hub provides a secure connection to the spindle of the reactor without imposing concentrated stresses on the ceramic plate. The hub can be removed during cleaning of the plate.

    摘要翻译： 用于旋转圆盘CVD反应器的晶片载体包括诸如碳化硅的陶瓷的整体板，其限定晶片保持特征，例如其上游表面上的凹穴，并且还包括可拆卸地安装到板的中心区域中的毂。 轮毂提供与反应器主轴的牢固连接，而不会在陶瓷板上产生集中应力。 在清洁板时可以拆下轮毂。

    Temperature determination using pyrometry
    8.
    发明授权
    Temperature determination using pyrometry 有权
    使用高温计测定温度

    公开(公告)号：US06398406B1

    公开(公告)日：2002-06-04

    申请号：US09587375

    申请日：2000-06-01

    申请人： William G. Breiland ,  Alexander I. Gurary ,  Vadim Boguslavskiy

    发明人： William G. Breiland ,  Alexander I. Gurary ,  Vadim Boguslavskiy

    IPC分类号： G01J500

    CPC分类号： G01J5/524

    摘要： A method for determining the temperature of a surface upon which a coating is grown using optical pyrometry by correcting Kirchhoff's law for errors in the emissivity or reflectance measurements associated with the growth of the coating and subsequent changes in the surface thermal emission and heat transfer characteristics. By a calibration process that can be carried out in situ in the chamber where the coating process occurs, an error calibration parameter can be determined that allows more precise determination of the temperature of the surface using optical pyrometry systems. The calibration process needs only to be carried out when the physical characteristics of the coating chamber change.

    摘要翻译： 使用光学高温测量法确定涂层生长的表面的温度的方法，通过校正与涂层生长相关联的发射率或反射率测量的误差的基尔霍夫定律以及随后的表面热发射和传热特性的变化。 通过可以在发生涂覆过程的室中原位进行的校准过程，可以确定误差校准参数，其允许使用光学高温测量系统更精确地确定表面的温度。 只有当涂层室的物理特性发生变化时，才需要进行校准过程。