摘要:
Magnetoresistive random access memory (MRAM) is used to provide in-pixel memory circuits for display devices. A memory circuit (25) comprises memory elements, for storing a drive setting, and a read-out circuit, for example a flip-flop circuit (64), for reading-out the stored drive setting. The memory elements comprise two MRAMs (60, 62), each coupled to a respective input of the flip-flop circuit (64). A drive circuit (26) is coupled to the read-out circuit and a pixel display electrode (27) for driving the pixel display electrode (27) dependent upon the read-out drive setting with drive current that does not pass through the MRAMs (60, 62). A display device (1) is provided comprising a plurality of pixels (20) each associated with one such memory circuit (25) and drive circuit (26).
摘要:
Thin-film magnetic head having a head face (103) and comprising a magnetoresistive element (109) oriented transversely to the head face and a flux-guiding element (107) of a magnetically permeable material terminating in the head face. A peripheral area (109a) of the magnetoresistive element extending parallel to the head face is present opposite the flux-guiding element for forming a magnetic connection between the magnetoresistive element and the flux-guiding element. The flux-guiding element and the peripheral area of the magnetoresistive element constitute a common magnetic contact face (111), while the magnetically permeable material of the flux-guiding element is electrically insulating.
摘要:
A method for use in the fabrication of active plates for pixilated devices, such as active matrix liquid crystal displays, having pixel electrodes (38) and associated address lines (32) formed from a layer of transparent conductive material (53) through which the conductivity of the address lines is improved. The transparent conductive layer (53) and a metal layer (54) are deposited in succession and followed by a shielding layer (60), e.g. of photoresist, which is patterned into a configuration of regions (67,68,69) corresponding to the required pixel dielectrodes and address lines with a property of the layer at these respective regions being different. This enables the regions of this layer corresponding to the pixel electrodes to be selectively etched away, thereby allowing the metal at these regions to be selectively removed while leaving metal at the address lines. The method simplifies the production of low mask mount TFT active plates with improved address line conductivity.
摘要:
A magnetic field sensor comprises a transducer element, which: transducer element is a Spin Tunnel Junction, comprising a first and second magnetic layer which are sandwiched about an interposed electrical insulator layer; the sensor comprises a yoke having two arms; and the first magnetic layer is in direct contact with a first portion of a first arm of the yoke.
摘要:
A planar magnetic device with vertically oriented coil windings having a cross-section of a core with a torroidally-shaped winding structure taken transverse to the plane of the winding structure having two adjacent “winding windows” where the coils are present. One or more gaps in the core materials surrounding the windings store most of the energy generated by the inductor. The gap of height of at least one half the height of the winding structure is confined to the area between the winding cross-sections. Furthermore, in another aspect of the invention the gap is filled with a multi-layer structure of an alternating mono-layer of equally sized ferrite particles and a layer of synthetic resin.
摘要:
A power cord transformer includes a core of ferromagnetic material, a primary coil and a secondary coil both provided around the core. The core and coils have such a shape that the distance between two points on the primary coil and also the distance between two points on the secondary coil is always smaller than twice the largest axis of the power cord cross-section.
摘要:
Deflection ring of sintered MgZn-ferrite material, cathode ray tube comprising such a ring and moulding made from this material. The invention relates to a deflection ring of sintered MgZn-ferrite material. In accordance with the invention, this deflection ring is characterized in that the majority of the grains of the sintered material have a monodomain structure. By virtue thereof, a relatively small heat dissipation occurs in the ring when it is used in a cathode ray tube. The average grain size of the sintered MgZn-ferrite material is preferably 2.8 micrometers or less. MgZn-ferrite materials whose composition corresponds to the formula Mg.sub.1-z Zn.sub.z Fe.sub.2-y O.sub.4, wherein 0.1
摘要:
A method of forming an active plate for a liquid crystal display is disclosed in which the source and drain conductors (28, 30), pixel electrodes (38) and column conductors (32) are formed by depositing and patterning a transparent conductor layer. There is selective plating of areas (52; 60) of the transparent conductor layer to form a metallic layer for reducing the resistivity of the transparent conductor layer. The plated areas include the column conductors (32) but exclude the source and drain conductors and the pixel electrodes. This enables the column conductors to be treated to reduce the resistivity, but without altering the channel length of the transistor because the source and drain parts of the layer are shielded from the plating process.
摘要:
The invention provides a method of manufacturing an electronic device including a vertical thin film transistor. A layer (8) of semiconductor material is provided over an insulated gate electrode (2). A negative resist (14) is used to define source and drain electrodes (26,28) which extend over the insulating layer (8) up to the step formed therein adjacent an edge (16A) of the gate electrode (2).
摘要:
Thin-film magnetic head having a head face (103) and comprising a magnetoresistive element (109) oriented transversely to the head face and a flux-guiding element (107) of a magnetically permeable material terminating in the head face. A peripheral area (109a) of the magnetoresistive element extending parallel to the head face is present opposite the flux-guiding element for forming a magnetic connection between the magnetoresistive element and the flux-guiding element. The flux-guiding element and the peripheral area of the magnetoresistive element constitute a common magnetic contact face (111), while the magnetically permeable material of the flux-guiding element is electrically insulating.