公开(公告)号：US20080096369A1

公开(公告)日：2008-04-24

申请号：US11573325

申请日：2005-07-01

申请人： Piotr Strzyzewski ,  Peter Baumann ,  Marcus Schumacher ,  Johannes Lindner ,  Antonio Meequilda Kusters

发明人： Piotr Strzyzewski ,  Peter Baumann ,  Marcus Schumacher ,  Johannes Lindner ,  Antonio Meequilda Kusters

IPC分类号： H01L21/36 ,  C23C16/00

CPC分类号： C23C16/458 ,  B05C3/18 ,  B05D1/36 ,  C23C16/45551

摘要： The invention relates to a device for depositing at least one especially thin layer onto at least one substrate (9). Said device comprises a process chamber (1, 20, 11, 11′, 40, 21), housed in a reactor housing (2) and comprising a movable susceptor (20) which carries the at least one substrate (9). A plurality of gas feed lines (24) run into said process chamber and feed different process gases which comprise coat-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the coat-forming components onto the substrate (9). In order to increase the throughput of said method, the process chamber is provided with a plurality of separate deposition chambers (11, 11′) into which different gas feed lines (24, 24′) run, thereby feeding individual gas compositions. The substrate (9) can be fed to said chambers one after the other by moving the susceptor (20) and depositing different layers or layer components.

摘要翻译： 本发明涉及一种用于将至少一个特别薄的层沉积在至少一个基底（9）上的装置。 所述装置包括容纳在反应器壳体（2）中并包括承载至少一个基板（9）的可移动基座（20）的处理室（1,20,11,11'，40,21）。 多个气体供给管线（24）进入所述处理室并且供给包括涂层成分的不同工艺气体。 所述工艺气体可以在随后的工艺步骤中进料到处理室，从而将涂层形成组分沉积到衬底（9）上。 为了增加所述方法的生产量，处理室设置有多个分离的沉积室（11,11'），不同的气体供给管线（24,24'）运行到其中，从而供给单独的气体组成。 基板（9）可以通过移动基座（20）并沉积不同的层或层部件而一个接一个地馈送到所述腔室。

公开(公告)号：US06908838B2

公开(公告)日：2005-06-21

申请号：US10601508

申请日：2003-06-23

申请人： Piotr Strzyzewski

发明人： Piotr Strzyzewski

IPC分类号： C23C16/44 ,  C23C16/54 ,  H01L21/00 ,  H01L21/02 ,  H01L21/205 ,  H01L21/20

CPC分类号： H01L21/67196 ,  C23C16/4408 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/6719

摘要： The invention relates to a method and to a device for treating semiconductor substrates. In conventional systems, the especially uncoated semiconductor substrates are fed to a treatment device through a charging sluice, said charging sluice adjoining a transfer chamber. A plurality of treatment chambers can be charged with the semiconductor substrates to be treated from said transfer chamber by first evacuating the transfer chamber and the treatment chamber and then opening the connecting door between the transfer chamber and the treatment chamber. The aim of the invention is to improve this system. To this end, at least one of the treatment chambers is operated at a low pressure or atmospheric pressure and the transfer chamber is flooded with an inert gas before the connecting door associated with the treatment chamber is opened, while a predetermined pressure difference between the transfer chamber and the treatment chamber is maintained.

摘要翻译： 本发明涉及一种处理半导体衬底的方法和装置。 在常规系统中，特别未涂覆的半导体衬底通过充电闸门供给到处理装置，所述充电闸与邻接的传送室相连。 可以通过首先排出传送室和处理室，然后在传送室和处理室之间打开连接门，从而从所述传送室向多个处理室充满待处理的半导体衬底。 本发明的目的是改进该系统。 为此，处理室中的至少一个在低压或大气压力下操作，并且在与处理室相关联的连接门打开之前，传送室充满惰性气体，同时转印之间的预定压力差 室和处理室被维持。

公开(公告)号：US06849241B2

公开(公告)日：2005-02-01

申请号：US10210247

申请日：2002-08-01

申请人： Martin Dauelsberg ,  Marcus Schumacher ,  Holger Juergensen ,  Gerd Strauch ,  Piotr Strzyzewski

发明人： Martin Dauelsberg ,  Marcus Schumacher ,  Holger Juergensen ,  Gerd Strauch ,  Piotr Strzyzewski

IPC分类号： B01J19/00 ,  C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/04

CPC分类号： C23C16/45574 ,  C23C16/45514 ,  C23C16/4557 ,  C23C16/45572 ,  Y10T117/10 ,  Y10T117/1016

摘要： The invention relates to a device and method for depositing one or more layers onto at least one substrate placed inside a reaction chamber. The layers are deposited while using a liquid or solid starting material for one of the reaction gases utilized, which are fed via a gas admission unit to the reaction chamber where they condense or epitaxially grow on the substrate. The gas admission unit comprises a multitude of buffer volumes in which the reaction gasses enter separate of one another, and exit through closely arranged outlet openings while also being spatially separate of one another. The temperature of reaction gases is moderated while passing through the gas admission unit.

摘要翻译： 本发明涉及一种用于在放置在反应室内部的至少一个衬底上沉积一层或多层的装置和方法。 在将液体或固体原料用于所用的一种反应气体的同时沉积这些层，这些原料通过气体导入单元进料到反应室，在反应室中它们在基材上冷凝或外延生长。 气体进入单元包括多个缓冲体积，其中反应气体彼此分离，并且通过紧密排列的出口开口排出，同时在空间上彼此分离。 反应气体的温度在通过气体导入单元时缓和。

公开(公告)号：US6089548A

公开(公告)日：2000-07-18

申请号：US894204

申请日：1997-10-23

申请人： Lothar Pfitzner ,  Heiner Ryssel ,  Piotr Strzyzewski ,  Georg Roeder

发明人： Lothar Pfitzner ,  Heiner Ryssel ,  Piotr Strzyzewski ,  Georg Roeder

IPC分类号： B01D1/00 ,  B01D1/16 ,  B01D3/34 ,  B01J7/00 ,  C23C16/44 ,  C23C16/448 ,  H01L21/205 ,  B01F3/04 ,  B01F11/02

CPC分类号： B01D3/346 ,  B01D1/00 ,  Y10S261/48

摘要： In a method and an apparatus for converting a liquid flow into a gas flow, a liquid flow is introduced into an evaporation volume, the liquid flow is dispersed so as to enlarge the surface of the liquid, the dispersion being not caused by a change of pressure and taking place without admixture of a medium, and the evaporated liquid flow is conducted out of the evaporation volume.

摘要翻译： PCT No.PCT / EP95 / 04846 Sec。 371日期：1997年10月23日 102（e）1997年10月23日PCT 1995年12月8日PCT PCT。 出版物WO96 / 23564 日本1988年8月8日在将液体流转换为气流的方法和装置中，将液体流引入蒸发体积中，分散液体以扩大液体的表面，分散体不 由压力变化引起，并且在不混合介质的情况下进行，并且蒸发的液体流量从蒸发体积进行。