公开(公告)号：US08026592B2

公开(公告)日：2011-09-27

申请号：US12408369

申请日：2009-03-20

申请人： Minseung Yoon ,  Namseog Kim ,  Pyoungwan Kim ,  Keumhee Ma ,  Chajea Jo

发明人： Minseung Yoon ,  Namseog Kim ,  Pyoungwan Kim ,  Keumhee Ma ,  Chajea Jo

IPC分类号： H01L23/04

CPC分类号： H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/06181 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2924/00

摘要： Through-Silicon-Via (TSV) structures can include a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate opposite the upper surface, a conductive protective layer including Ni and/or Co can be at a bottom of the conductive via, and a separate polymer insulating layer can be on the backside surface of the substrate in contact with the conductive protective layer.

摘要翻译： 通过硅 - 通（TSV）结构可以包括通过从衬底的上表面延伸到衬底的与上表面相对的背面的衬底的导电通孔，包括Ni和/或Co的导电保护层可以在 导电通孔的底部和单独的聚合物绝缘层可以在与导电保护层接触的基板的背面上。

公开(公告)号：US20110318917A1

公开(公告)日：2011-12-29

申请号：US13163284

申请日：2011-06-17

申请人： Minseung Yoon ,  Namseog Kim ,  Pyoungwan Kim ,  Keumhee Ma ,  Chajea Jo

发明人： Minseung Yoon ,  Namseog Kim ,  Pyoungwan Kim ,  Keumhee Ma ,  Chajea Jo

IPC分类号： H01L21/768

CPC分类号： H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/06181 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2924/00

摘要： Through-Silicon-Via (TSV) structures can be provided by forming a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate, that is opposite the upper surface, and having a conductive protective layer comprising Ni and/or Co formed at a bottom of the conductive via. A polymer insulating layer can be formed on the backside surface that is separate from the substrate and in contact with the conductive protective layer.

摘要翻译： 可以通过从衬底的上表面延伸到基板的与该上表面相对的背面表面延伸的衬底形成导电通孔，并且具有导电保护层，该导电保护层包括 Ni和/或Co形成在导电通孔的底部。 聚合物绝缘层可以形成在与基板分离并与导电保护层接触的背面上。

公开(公告)号：US20100038800A1

公开(公告)日：2010-02-18

申请号：US12408369

申请日：2009-03-20

申请人： Minseung Yoon ,  Namseog Kim ,  Pyoungwan Kim ,  Keumhee Ma ,  Chajea Jo

发明人： Minseung Yoon ,  Namseog Kim ,  Pyoungwan Kim ,  Keumhee Ma ,  Chajea Jo

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/06181 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2924/00

摘要： Through-Silicon-Via (TSV) structures can include a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate opposite the upper surface, a conductive protective layer including Ni and/or Co can be at a bottom of the conductive via, and a separate polymer insulating layer can be on the backside surface of the substrate in contact with the conductive protective layer.

摘要翻译： 通过硅 - 通（TSV）结构可以包括通过从衬底的上表面延伸到衬底的与上表面相对的背面的衬底的导电通孔，包括Ni和/或Co的导电保护层可以在 导电通孔的底部和单独的聚合物绝缘层可以在与导电保护层接触的基板的背面上。