公开(公告)号：US08466512B2

公开(公告)日：2013-06-18

申请号：US12858840

申请日：2010-08-18

申请人： Fujio Masuoka ,  Shintaro Arai ,  Hiroki Nakamura ,  Tomohiko Kudo ,  R. Ramana Murthy ,  Nansheng Shen ,  Kavitha Devi Buddharaju ,  Navab Singh

发明人： Fujio Masuoka ,  Shintaro Arai ,  Hiroki Nakamura ,  Tomohiko Kudo ,  R. Ramana Murthy ,  Nansheng Shen ,  Kavitha Devi Buddharaju ,  Navab Singh

IPC分类号： H01L29/66

CPC分类号： H01L29/66666 ,  H01L21/76804 ,  H01L21/76816 ,  H01L29/41741 ,  H01L29/42356 ,  H01L29/7827

摘要： A method for producing a semiconductor device includes preparing a structure having a substrate, a planar semiconductor layer and a columnar semiconductor layer, forming a second drain/source region in the upper part of the columnar semiconductor layer, forming a contact stopper film and a contact interlayer film, and forming a contact layer on the second drain/source region. The step for forming the contact layer includes forming a pattern and etching the contact interlayer film to the contact stopper film using the pattern to form a contact hole for the contact layer and removing the contact stopper film remaining at the bottom of the contact hole by etching. The projection of the bottom surface of the contact hole onto the substrate is within the circumference of the projected profile of the contact stopper film formed on the top and side surface of the columnar semiconductor layer onto the substrate.

摘要翻译： 一种制造半导体器件的方法包括制备具有基板，平面半导体层和柱状半导体层的结构，在柱状半导体层的上部形成第二漏极/源极区域，形成接触阻挡膜和触点 并在第二漏极/源极区域上形成接触层。 形成接触层的步骤包括形成图案，并使用图案将接触层间膜蚀刻到接触阻挡膜，以形成用于接触层的接触孔，并通过蚀刻去除残留在接触孔底部的接触阻挡膜 。 接触孔的底面向基板的突出部位于形成在柱状半导体层的顶部和侧面上的接触阻挡膜的突出轮廓的圆周上。

公开(公告)号：US20110042740A1

公开(公告)日：2011-02-24

申请号：US12858840

申请日：2010-08-18

申请人： Fujio MASUOKA ,  Shintaro ARAI ,  Hiroki NAKAMURA ,  Tomohiko KUDO ,  R. Ramana MURTHY ,  Nansheng SHEN ,  Kavitha Devi BUDDHARAJU ,  Navab SINGH

发明人： Fujio MASUOKA ,  Shintaro ARAI ,  Hiroki NAKAMURA ,  Tomohiko KUDO ,  R. Ramana MURTHY ,  Nansheng SHEN ,  Kavitha Devi BUDDHARAJU ,  Navab SINGH

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66666 ,  H01L21/76804 ,  H01L21/76816 ,  H01L29/41741 ,  H01L29/42356 ,  H01L29/7827

摘要： A method for producing a semiconductor device includes preparing a structure having a substrate, a planar semiconductor layer and a columnar semiconductor layer, forming a second drain/source region in the upper part of the columnar semiconductor layer, forming a contact stopper film and a contact interlayer film, and forming a contact layer on the second drain/source region. The step for forming the contact layer includes forming a pattern and etching the contact interlayer film to the contact stopper film using the pattern to form a contact hole for the contact layer and removing the contact stopper film remaining at the bottom of the contact hole by etching. The projection of the bottom surface of the contact hole onto the substrate is within the circumference of the projected profile of the contact stopper film formed on the top and side surface of the columnar semiconductor layer onto the substrate.

摘要翻译： 一种制造半导体器件的方法包括制备具有基板，平面半导体层和柱状半导体层的结构，在柱状半导体层的上部形成第二漏极/源极区域，形成接触阻挡膜和触点 并在第二漏极/源极区域上形成接触层。 形成接触层的步骤包括形成图案，并使用图案将接触层间膜蚀刻到接触阻挡膜，以形成用于接触层的接触孔，并通过蚀刻去除残留在接触孔底部的接触阻挡膜 。 接触孔的底面向基板的突出部位于形成在柱状半导体层的顶部和侧面上的接触阻挡膜的突出轮廓的圆周上。