Abstract:
In one embodiment, a system to measure defects on a surface of a wafer and an edge of the wafer using a single tool comprises a scatterometer to identify at least one defect region on the surface and a surface profile height measuring tool to measure one or more characteristics of the surface in the defect region with a surface profile height measuring tool.
Abstract:
A system with two unequal path interferometers, with a first flat, a second flat, and a cavity between the first and second flats, a holder to receive an object in the cavity such that an optical path remains open between the first and second flats, and a motor coupled to the holder such that the object may be tilted in the cavity to allow for measurements of, and a radiation assembly to direct collimated radiation to the interferometer assembly, a collecting assembly to collect radiation received from the interferometer assembly, and a controller comprising logic to; vary a wavelength of the radiation, record interferograms, extract phases of the interferograms to produce phase maps, determine from each map areas with high slopes, tilt the holder to allow measurement of the high slope areas, and process measurement that covers the entire surface of the object.
Abstract:
In one embodiment, an interferometer system comprises two unequal path interferometers assemble comprising; a first reference flat having a first length L1 in a first dimension, a second reference flat having a second length L2 in the first dimension, a cavity D1 defined by a distance between the first reference flat and the second reference flat, a wafer holder to receive an object in the cavity such that an optical path remains open at an outer annual area between the first reference flat and the second reference flat and at least one wafer holder motor coupled to the wafer holder such that an object may be tilted in the cavity as to allow for measurements of local areas of interest, and a radiation targeting assembly to direct a collimated radiation beam to the interferometer assembly, a radiation collecting assembly to collect radiation received from the interferometer assembly, and a controller comprising logic to; vary a wavelength of the collimated radiation beam, record interferograms formed by a plurality of surfaces, extract phases of each of the interferograms for each of the plurality of surfaces to produce multiple phase maps, determine each map from its corresponding interferogram, determine from each map local areas of interest with high slopes, tilt the wafer holder to allow measurement of the high slope areas of interest, and process measurement that covers the entire surface of an object including high slope areas.
Abstract:
In one embodiment, a method of dynamic reference plane compensation, comprises impinging radiation from a first radiation source onto a surface of an object; generating an uncompensated measurement signal from radiation reflected from a first location on the surface and a second location; generating a compensation signal from radiation reflected from a third location and a fourth location on the surface; and generating a compensated measurement signal using the uncompensated measurement signal and the compensation signal.
Abstract:
In one embodiment, a method of dynamic reference plane compensation, comprises impinging radiation from a first radiation source onto a surface of an object; generating an uncompensated measurement signal from radiation reflected from a first location on the surface and a second location; generating a compensation signal from radiation reflected from a third location and a fourth location on the surface; and generating a compensated measurement signal using the uncompensated measurement signal and the compensation signal.
Abstract:
In one embodiment, a system to measure defects on a surface of a wafer and an edge of the wafer using a single tool comprises a scatterometer to identify at least one defect region on the surface and a surface profile height measuring tool to measure one or more characteristics of the surface in the defect region with a surface profile height measuring tool.
Abstract:
In embodiments, techniques for interferometry measurements in disturbed environments are described. The disturbed environment may include one or more variations such as pressure variations and/or thermal variations. In one embodiment, a difference between an optical path of a first beam and an optical path of a second beam is detected. One or more of the first or second beams may be encased in a shroud proximate to the disturbed environment. The method may further couple a window to the shroud in proximity to the disturbed environment, e.g., to reduce the negative effects of the disturbed environment.