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公开(公告)号:US4018938A
公开(公告)日:1977-04-19
申请号:US591986
申请日:1975-06-30
申请人: Ralph Feder , Eberhard A. Spiller
发明人: Ralph Feder , Eberhard A. Spiller
CPC分类号: G03F1/22 , G03F7/2039 , H05K3/0002 , H05K3/108 , Y10S430/167 , Y10S430/168
摘要: A method of constructing masks characterized by a high aspect ratio. The method includes at least a single exposure of a mask by radiation which is transmitted by the substrate before impinging on the resist. In a specific embodiment the mask is partially completed and the already deposited mask modulates the radiation transmitted by the substrate before it exposes the resist.
摘要翻译: 构造以高纵横比为特征的掩模的方法。 该方法包括通过辐射对掩模进行的至少一次曝光,该辐射在被撞击到抗蚀剂之前由衬底透射。 在具体实施例中,掩模部分地完成,并且已经沉积的掩模在其暴露抗蚀剂之前调制由衬底传输的辐射。
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公开(公告)号:US3984582A
公开(公告)日:1976-10-05
申请号:US591980
申请日:1975-06-30
CPC分类号: G03F7/039 , G03F7/325 , Y10S430/143 , Y10S430/168
摘要: A positive resist image is produced by exposing, to radiation in a predetermined pattern, a polymeric material containing polymerized alkyl methacrylate units and polymerized monoethylenically unsaturated acid units. The exposed and unexposed areas are distinguished by their different respective abilities to be swelled in an appropriate swelling agent, and the swelled areas are removed by dispersal in a nonsolvent liquid.
摘要翻译: 通过以预定图案曝光包含聚合的甲基丙烯酸烷基酯单元和聚合的单烯属不饱和酸单元的聚合物材料来产生正性抗蚀剂图像。 暴露和未暴露的区域的区别在于它们各自的能力在适当的溶胀剂中溶胀,并且溶胀区域通过分散在非溶剂液体中除去。
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公开(公告)号:US4293374A
公开(公告)日:1981-10-06
申请号:US128710
申请日:1980-03-10
IPC分类号: G03F1/20 , H01L21/203 , H01L21/266 , B44C1/22 , C03C15/00 , C03C25/06 , H01L21/425
CPC分类号: G03F1/20 , H01L21/266 , Y10S438/944
摘要: A high aspect ratio collimating mask for use in ion beam epitaxy or ion implantation doping is formed through the use of damage-trail-forming materials which are irradiated through a mask and then etched. The high aspect ratio is obtained in part by the sequential formation of a plurality of spaced mask plates. The mask is useful in producing large scale integrated circuits by ion implantation during epitaxial growth of a crystal wafer.
摘要翻译: 通过使用通过掩模照射然后蚀刻的损伤轨道形成材料形成用于离子束外延或离子注入掺杂的高纵横比准直掩模。 高纵横比部分地通过顺序形成多个间隔开的掩模板获得。 该掩模可用于在晶体晶片的外延生长期间通过离子注入生产大规模集成电路。
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公开(公告)号:US3012882A
公开(公告)日:1961-12-12
申请号:US483860
申请日:1960-01-26
申请人: LEONARD MULDAWER , RALPH FEDER
发明人: LEONARD MULDAWER , RALPH FEDER
CPC分类号: H01H37/323 , C22C5/02 , C22F1/006 , H01R4/01 , Y10S439/932
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