公开(公告)号：US20150021621A1

公开(公告)日：2015-01-22

申请号：US14336654

申请日：2014-07-21

申请人： RamGoss, Inc.

发明人： Bunmi T. ADEKORE ,  Hugues MARCHAND

IPC分类号： H01L29/78 ,  H01L29/20 ,  H01L29/66 ,  H01L29/24

CPC分类号： H01L29/7827 ,  H01L29/045 ,  H01L29/1058 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/24 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/66666 ,  H01L29/66969 ,  H01L29/8083

摘要： This disclosure provides a transistor device formed on a wide band gap substrate. The transistor device includes a channel layer and a gate structure physically coupled to the channel layer. The gate structure can be formed on the channel layer using an epitaxial process instead of a lithographic process, thereby providing a mechanism to build small semiconductor features that are smaller than a resolution of the state-of-the-art lithographic process and reducing the amount of impurities between the channel layer and the gate structure.

摘要翻译： 本公开提供了形成在宽带隙衬底上的晶体管器件。 晶体管器件包括物理耦合到沟道层的沟道层和栅极结构。 可以使用外延工艺而不是光刻工艺在沟道层上形成栅极结构，从而提供一种机制，以构建小于最先进光刻工艺的分辨率的小半导体特征，并减少量 的沟道层和栅极结构之间的杂质。

公开(公告)号：US20150123124A1

公开(公告)日：2015-05-07

申请号：US14590248

申请日：2015-01-06

申请人： RamGoss, Inc.

发明人： Bunmi T. ADEKORE ,  James FIORENZA

IPC分类号： H01L27/088 ,  H01L29/10 ,  H01L29/24 ,  H01L29/778 ,  H01L29/205

CPC分类号： H01L27/0883 ,  H01L27/0605 ,  H01L27/085 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/12 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/225 ,  H01L29/24 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/7789

摘要： A transistor device, such as a rotated channel metal oxide/insulator field effect transistor (RC-MO(I)SFET), includes a substrate including a non-polar or semi-polar wide band gap substrate material such as an Al2O3 or a ZnO or a Group-III Nitride-based material, and a first structure disposed on a first side of the substrate comprising of AlInGaN-based and/or ZnMgO based semiconducting materials. The first structure further includes an intentional current-conducting sidewall channel or facet whereupon additional semiconductor layers, dielectric layers and electrode layers are disposed and upon which the field effect of the dielectric and electrode layers occurs thus allowing for a high density monolithic integration of a multiplicity of discrete devices on a common substrate thereby enabling a higher power density than in conventional lateral power MOSFET devices.

摘要翻译： 诸如旋转的沟道金属氧化物/绝缘体场效应晶体管（RC-MO（I）SFET）的晶体管器件包括包括非极性或半极性宽带隙衬底材料如Al 2 O 3或ZnO的衬底 或基于III族氮化物的材料，以及设置在包括AlInGaN基和/或ZnMgO基半导体材料的衬底的第一侧上的第一结构。 第一结构还包括有意导电的侧壁通道或小面，因此设置了附加的半导体层，电介质层和电极层，并且在其上发生电介质层和电极层的场效应，从而允许多密度的高密度单片集成 的公共衬底上的分立器件，从而实现比常规横向功率MOSFET器件更高的功率密度。

公开(公告)号：US20130181215A1

公开(公告)日：2013-07-18

申请号：US13743062

申请日：2013-01-16

申请人： RamGoss, Inc.

发明人： Bunmi T. ADEKORE ,  James FIORENZA

IPC分类号： H01L29/12 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L27/0883 ,  H01L27/0605 ,  H01L27/085 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/12 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/225 ,  H01L29/24 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/7789

摘要： A transistor device, such as a rotated channel metal oxide/insulator field effect transistor (RC-MO(I)SFET), includes a substrate including a non-polar or semi-polar wide band gap substrate material such as an Al2O3 or a ZnO or a Group-III Nitride-based material, and a first structure disposed on a first side of the substrate comprising of AlInGaN-based and/or ZnMgO based semiconducting materials. The first structure further includes an intentional current-conducting sidewall channel or facet whereupon additional semiconductor layers, dielectric layers and electrode layers are disposed and upon which the field effect of the dielectric and electrode layers occurs thus allowing for a high density monolithic integration of a multiplicity of discrete devices on a common substrate thereby enabling a higher power density than in conventional lateral power MOSFET devices.

摘要翻译： 诸如旋转的沟道金属氧化物/绝缘体场效应晶体管（RC-MO（I）SFET）的晶体管器件包括包括非极性或半极性宽带隙衬底材料如Al 2 O 3或ZnO的衬底 或基于III族氮化物的材料，以及设置在包括AlInGaN基和/或ZnMgO基半导体材料的衬底的第一侧上的第一结构。 第一结构还包括有意导电的侧壁通道或小面，因此设置了附加的半导体层，电介质层和电极层，并且在其上发生电介质层和电极层的场效应，从而允许多密度的高密度单片集成 的公共衬底上的分立器件，从而实现比常规横向功率MOSFET器件更高的功率密度。

公开(公告)号：US08927984B2

公开(公告)日：2015-01-06

申请号：US13743062

申请日：2013-01-16

申请人： RamGoss, Inc.

发明人： Bunmi T. Adekore ,  James Fiorenza

IPC分类号： H01L29/12 ,  H01L29/778 ,  H01L29/66 ,  H01L27/06 ,  H01L27/085 ,  H01L29/20 ,  H01L29/06 ,  H01L29/225

CPC分类号： H01L27/0883 ,  H01L27/0605 ,  H01L27/085 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/12 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/225 ,  H01L29/24 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/7789

摘要： A transistor device, such as a rotated channel metal oxide/insulator field effect transistor (RC-MO(I)SFET), includes a substrate including a non-polar or semi-polar wide band gap substrate material such as an Al2O3 or a ZnO or a Group-III Nitride-based material, and a first structure disposed on a first side of the substrate comprising of AlInGaN-based and/or ZnMgO based semiconducting materials. The first structure further includes an intentional current-conducting sidewall channel or facet whereupon additional semiconductor layers, dielectric layers and electrode layers are disposed and upon which the field effect of the dielectric and electrode layers occurs thus allowing for a high density monolithic integration of a multiplicity of discrete devices on a common substrate thereby enabling a higher power density than in conventional lateral power MOSFET devices.

摘要翻译： 诸如旋转的沟道金属氧化物/绝缘体场效应晶体管（RC-MO（I）SFET）的晶体管器件包括包括非极性或半极性宽带隙衬底材料如Al 2 O 3或ZnO的衬底 或基于III族氮化物的材料，以及设置在包括AlInGaN基和/或ZnMgO基半导体材料的衬底的第一侧上的第一结构。 第一结构还包括有意导电的侧壁通道或小面，因此设置了附加的半导体层，电介质层和电极层，并且在其上发生电介质层和电极层的场效应，从而允许多密度的高密度单片集成 的公共衬底上的分立器件，从而实现比常规横向功率MOSFET器件更高的功率密度。