公开(公告)号：US20050124151A1

公开(公告)日：2005-06-09

申请号：US10728215

申请日：2003-12-04

申请人： Yi-Lung Cheng ,  Ren-Haur Liu ,  Cheng-Hsiung Liu ,  Ying-Lang Wang ,  Hway-Chi Lin ,  Chien-Ming Chiu

发明人： Yi-Lung Cheng ,  Ren-Haur Liu ,  Cheng-Hsiung Liu ,  Ying-Lang Wang ,  Hway-Chi Lin ,  Chien-Ming Chiu

IPC分类号： C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76819

摘要： A method is disclosed for depositing a Black Diamond layer in a CVD chamber. Trimethylsilane, O2, and Ar are flowed into the chamber at 300° C. to 400° C. with an O2:Ar:trimethylsilane flow rate ratio that is preferably 1:1.5:6. The resulting low k dielectric layer is formed with a higher deposition rate than when Ar is omitted and has a k value of about 3 that increases only slightly in O2 plasma. A higher density, hardness, and tensile strength are achieved in the Black Diamond layer when Ar is included in the deposition process. The addition of Ar in the deposition maintains film thickness uniformity below 2% for a longer period so that PM cleaning operations are less frequent and affords a lower fluorocarbon plasma etch rate to enable improved trench depth control in a damascene scheme. A lower leakage current and higher breakdown voltage in achieved in the resulting metal interconnect.

摘要翻译： 公开了一种用于在CVD室中沉积黑金刚石层的方法。 三甲基硅烷O 2和Ar在300℃至400℃下以0:2:Ar:三甲基硅烷流速比流入室中，优选 1：1.5：6。 形成的低k电介质层的沉积速率高于省略Ar时的沉积速率，并且具有约3的K值仅在O 2等离子体中略微增加。 当在沉积过程中包含Ar时，在黑色金刚石层中获得较高的密度，硬度和拉伸强度。 沉积中Ar的添加将膜厚度均匀性维持在2％以下更长的时间，以便PM清洁操作较不频繁，并提供较低的氟碳等离子体蚀刻速率，从而能够改进镶嵌方案中的沟槽深度控制。 在所得到的金属互连中实现较低的漏电流和更高的击穿电压。