公开(公告)号：US20110303363A1

公开(公告)日：2011-12-15

申请号：US13148179

申请日：2010-01-14

Applicant: Masaki Hirayama ,  Tadahiro Ohmi

Inventor： Masaki Hirayama ,  Tadahiro Ohmi

IPC: C23F1/08 ,  H05H1/24

CPC classification number: H01J37/32275 ,  H01J37/32192 ,  H01J37/32238

Abstract: A microwave plasma processing apparatus for plasma-processing a substrate by exciting a gas by the microwave includes a processing container formed of metal, a microwave source for outputting the microwave, a first dielectric member that faces an inner wall of the processing container and for transmitting the microwave output from the microwave source into the processing container, and a second dielectric member that is provided on an inner surface of the processing container and restrains the microwave from propagating along the inner surface of the processing container.

Abstract translation: 微波等离子体处理装置，其通过微波激励气体等离子体处理基板包括：金属制的处理容器，微波输出用的微波源，面向处理容器的内壁的第一电介质部件， 从微波源输出的微波进入处理容器，以及设置在处理容器的内表面上并抑制微波沿着处理容器的内表面传播的第二电介质构件。

公开(公告)号：US07506609B2

公开(公告)日：2009-03-24

申请号：US10847555

申请日：2004-05-17

Applicant: Sven Ulrich ,  Michael Stüber ,  Harald Leiste ,  Lorenz Niederberger ,  Konrad Sell ,  Martina Lattemann ,  Roland Loos

Inventor： Sven Ulrich ,  Michael Stüber ,  Harald Leiste ,  Lorenz Niederberger ,  Konrad Sell ,  Martina Lattemann ,  Roland Loos

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32192 ,  H01J37/32275 ,  H01J37/32678 ,  H05H1/46 ,  H05H2001/4622

Abstract: In an arrangement for generating a local electron-cyclotron-microwave-low pressure plasma at a certain location within a gas-filled process chamber, a microwave supply means providing a microwave beam and a plasma localization unit generating a magnetic field are provided such that the magnetic field and the microwave beam intersect each other in the process chamber. The microwaves are uncoupled onto a concave reflection structure from the focal point thereof so that the microwave beam generated is essentially parallel. An arrangement for generating a magnetic field is movable along the microwave beam axis so that a cross volume between the microwave beam and the magnetic field can be moved along the beam axis whereby the conditions for electron cyclotron resonance are adjustable by displacement of the magnetic field.

Abstract translation: 在用于在气体填充处理室内的某一位置产生局部电子 - 回旋加速器 - 微波 - 低压等离子体的装置中，提供了提供微波束的微波提供装置和产生磁场的等离子体定位单元， 磁场和微波束在处理室中彼此相交。 微波从其焦点分离到凹面反射结构上，使得产生的微波束基本上是平行的。 用于产生磁场的装置可以沿着微波束轴线移动，使得微波束和磁场之间的交叉体积可以沿着光束轴线移动，由此电子回旋共振的条件可以通过磁场的位移来调节。

公开(公告)号：US07260500B2

公开(公告)日：2007-08-21

申请号：US10495117

申请日：2003-01-30

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: G06F11/277

CPC classification number: H01J37/32935 ,  H01J37/32192 ,  H01J37/32275 ,  H01J37/3299

Abstract: An equipment status monitoring system having at least one multi-modal resonator included as a part of a semiconductor processing system and a power source coupled to the at least one multi-modal resonator. The power source is configured to produce a microwave excitation signal corresponding to at least one mode of the multi-modal resonator and emit the microwave excitation signal into the semiconductor processing chamber. The system includes a detector coupled to the at least one multi-modal resonator and configured to measure the excitation signal. The system includes a control system connected to the detector and configured to provide a comparison of at least one measured excitation signal with a normal excitation signal corresponding to a normal status.

Abstract translation: 包括作为半导体处理系统的一部分的至少一个多模式谐振器的设备状态监视系统和耦合到所述至少一个多模谐振器的电源。 电源被配置为产生对应于多模式谐振器的至少一个模式的微波激励信号，并将微波激励信号发射到半导体处理室中。 该系统包括耦合到至少一个多模谐振器并被配置为测量激励信号的检测器。 该系统包括连接到检测器并被配置为提供至少一个测量的激励信号与对应于正常状态的正常激励信号的比较的控制系统。

公开(公告)号：US07214289B2

公开(公告)日：2007-05-08

申请号：US10493138

申请日：2002-10-24

Applicant: Eric J. Strang ,  Richard Parsons

Inventor： Eric J. Strang ,  Richard Parsons

IPC: C23F1/00 ,  H01L21/306

CPC classification number: H01L21/67253 ,  G01B15/02 ,  H01J37/32192 ,  H01J37/32275 ,  H01J37/3299 ,  H01L21/67069

Abstract: A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal. The method includes processing the wafer, measuring a second vacuum resonance voltage of the microwave signal, and determining whether the second measured voltage exceeds a threshold value using the first measured voltage as a reference value.

公开(公告)号：US5498308A

公开(公告)日：1996-03-12

申请号：US202187

申请日：1994-02-25

Applicant: Mohammad Kamarehi ,  James E. Simpson

Inventor： Mohammad Kamarehi ,  James E. Simpson

IPC: H05H1/46 ,  G03F7/34 ,  H01J37/32 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01P7/06 ,  H05B6/76 ,  H05H1/00

CPC classification number: H01J37/32275 ,  H01J37/32357 ,  H05B6/76 ,  H05B6/806

Abstract: A plasma asher which obviates microwave leakage and attendant problems by providing a microwave trap proximate the opening through which the plasma tube exits the microwave cavity.

Abstract translation: 一种等离子体灰浆，其通过在等离子体管离开微波腔的开口附近提供微波陷阱来消除微波泄漏和伴随的问题。

公开(公告)号：US4939424A

公开(公告)日：1990-07-03

申请号：US355886

申请日：1989-05-23

Applicant: Jorg Kieser ,  Michael Geisler ,  Rolf Wilhelm ,  Eberhard Rauchle

Inventor： Jorg Kieser ,  Michael Geisler ,  Rolf Wilhelm ,  Eberhard Rauchle

IPC: H05H1/46 ,  C23C16/40 ,  C23C16/44 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32

CPC classification number: H01J37/32275 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32366 ,  H01J37/32678

Abstract: The plasma produced by means of microwaves in the presence of a magnetic field and a gas serves to coat a substrate which is situated in a chamber having metal walls. The microwaves are repeatedly reflected at the metal walls, so that the chamber has numerous microwave modes. By means of permanent magnets, which are placed either inside the chamber or outside the chamber in the vicinity of the substrate that is to be coated, it is possible to produce within this chamber an electron-cyclotron resonance which permits a locally controlled ignition of the plasma.

Abstract translation: 在存在磁场和气体的情况下通过微波产生的等离子体用于涂覆位于具有金属壁的室中的衬底。 微波在金属壁处反复反射，使得腔室具有许多微波模式。 通过将永磁体放置在腔室内或室内的待涂覆衬底附近的永磁体，可以在该室内产生电子回旋共振，其允许局部控制点火 等离子体。

公开(公告)号：US4664937A

公开(公告)日：1987-05-12

申请号：US854247

申请日：1986-04-21

Applicant: Stanford R. Ovshinsky ,  David D. Allred ,  Lee Walter ,  Stephen J. Hudgens

Inventor： Stanford R. Ovshinsky ,  David D. Allred ,  Lee Walter ,  Stephen J. Hudgens

IPC: C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  C23C11/02

CPC classification number: H01J37/3222 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32275 ,  H01L21/0242 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262

Abstract: A method of depositing a semiconductor alloy film onto a substrate by activating at least one group of free radicals and incorporating desired ones of the activated group into the film.

Abstract translation: 通过激活至少一组自由基并将所需的活化基团并入膜中而将半导体合金膜沉积到基底上的方法。

公开(公告)号：US4504518A

公开(公告)日：1985-03-12

申请号：US605575

申请日：1984-04-30

Applicant: Stanford R. Ovshinsky ,  David D. Allred ,  Lee Walter ,  Stephen J. Hudgens

Inventor： Stanford R. Ovshinsky ,  David D. Allred ,  Lee Walter ,  Stephen J. Hudgens

IPC: C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01L29/161 ,  H01L31/04 ,  H01L31/20 ,  B05D3/06

CPC classification number: H01J37/32 ,  C23C16/511 ,  H01J37/3222 ,  H01J37/32275 ,  H01L21/0242 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/161 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

Abstract: A low pressure process for making amorphous semiconductor alloy films and devices at high deposition rates and high gas conversion efficiencies utilizes microwave energy to form a deposition plasma. The alloys exhibit high-quality electronic properties suitable for many applications including photovoltaic and electrophotographic applications.The process includes the steps of providing a source of microwave energy, coupling the microwave energy into a substantially enclosed reaction vessel containing the substrate onto which the amorphous semiconductor film is to be deposited, introducing into the vessel at least one reaction gas and evacuating the vessel to a low enough deposition pressure to deposit the film at high deposition rates with high reaction gas conversion efficiencies without any significant powder or polymeric inclusions. The microwave energy and the reaction gases form a glow discharge plasma within the vessel to deposit an amorphous semiconductor film from the reaction gases onto the substrate. The reaction gases can include silane (SiH.sub.4), silicon tetrafluoride (SiF.sub.4), silane and silicon tetrafluoride, silane and germane (GeH.sub.4), and silicon tetrafluoride and germane. The reaction gases can also include germane or germanium tetrafluoride (GeF.sub.4). To all of the foregoing, hydrogen (H.sub.2) can also be added. Dopants, either p-type or n-type can also be added to the reaction gases to form p-type or n-type alloy films, respectively. Also, band gap increasing elements such as carbon or nitrogen can be added in the form of, for example, methane or ammonia gas to widen the band gap of the alloys.

Abstract translation: 用于制造非晶半导体合金膜和具有高沉积速率和高气体转换效率的器件的低压工艺利用微波能量来形成沉积等离子体。 该合金表现出高质量的电子性能，适用于许多应用，包括光伏和电子照相应用。 该方法包括以下步骤：提供微波能量源，将微波能量耦合到基本上封闭的反应容器中，所述反应容器含有要沉积非晶半导体膜的基底，将至少一个反应气体引入容器中并抽真空 达到足够低的沉积压力，以高反应气体转化效率以高沉积速率沉积膜，而没有任何显着的粉末或聚合物夹杂物。 微波能量和反应气体在容器内形成辉光放电等离子体，以将非晶半导体膜从反应气体沉积到衬底上。 反应气体可以包括硅烷（SiH4），四氟化硅（SiF4），硅烷和四氟化硅，硅烷和锗烷（GeH4）以及四氟化硅和锗烷。 反应气体还可以包括锗烷或四氟化锗（GeF 4）。 对于所有这些，也可以加入氢（H 2）。 也可以将p型或n型掺杂剂添加到反应气体中以分别形成p型或n型合金膜。 此外，带隙增加元素如碳或氮可以以例如甲烷或氨气的形式加入，以加宽合金的带隙。

公开(公告)号：US09761418B2

公开(公告)日：2017-09-12

申请号：US14519688

申请日：2014-10-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masayuki Shintaku ,  Takashi Suzuki ,  Masahiko Konno ,  Michitaka Aita ,  Taizo Okada ,  Hideo Kato ,  Naoki Matsumoto

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32192 ,  H01J37/32275

Abstract: A plasma processing apparatus for exciting a processing gas by a microwave, includes a focus ring extending in an annular shape, a first tubular member being wrapped around a central axis to extend along an outer periphery of the lower electrode below the focus ring, an annular member made of a dielectric material provided between the focus ring and the first tubular member a second tubular member extending along an outer periphery of the first tubular member and a choke portion suppressing a microwave propagating through the first tubular member via the focus ring and the annular member. And the choke portion protrudes outward in a diametrical direction of the first tubular from the outer periphery of the first tubular member and extends in an annular shape along the periphery of the first tubular member, the choke portion is covered by the second tubular member.

公开(公告)号：US20080053988A1

公开(公告)日：2008-03-06

申请号：US11895706

申请日：2007-08-27

Applicant: Kiyotaka Arai ,  Hirofumi Mankawa ,  Hidetaka Matsuuchi ,  Ryuichi Iwasaki ,  Kazuhiro Yoshida ,  Shigeru Masuda ,  Hirofumi Hayashi ,  Masaaki Mike

Inventor： Kiyotaka Arai ,  Hirofumi Mankawa ,  Hidetaka Matsuuchi ,  Ryuichi Iwasaki ,  Kazuhiro Yoshida ,  Shigeru Masuda ,  Hirofumi Hayashi ,  Masaaki Mike

IPC: H05B6/68

CPC classification number: H05B6/72 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32275 ,  H01J37/32752 ,  H01J37/32825 ,  H05B6/705 ,  H05B6/78

Abstract: Disclosed is a plasma generation apparatus, which comprises a microwave generation section adapted to generate a microwave, a gas supply section adapted to supply a gas to be plasmatized, a plasma generation nozzle which is provided with an inner electrode adapted to receive the microwave and an outer electrode concentrically disposed outside the inner electrode, and adapted to plasmatize the gas supplied from the gas supply section thereinto, based on energy of the microwave, and emit the plasmatized gas from a distal end thereof; and an adapter attached to the distal end of the plasma generation nozzle. In the plasma generation apparatus, the inner and outer electrodes of the plasma generation nozzle are disposed to allow a glow discharge to be induced therebetween so as to plasmatize the gas in a space defined therebetween, and, according to a new supply of the gas into the space, emit the plasmatized gas under atmospheric pressures from a ring-shaped spout of the space in the distal end of the plasma generation nozzle. The adapter is adapted to convert the ring-shaped spout to a lengthwise spout thereof.

Abstract translation: 公开了一种等离子体产生装置，其包括适于产生微波的微波产生部分，适于供应待等离子体化气体的气体供应部分，具有适于接收微波的内部电极的等离子体产生喷嘴和 外部电极同心地设置在内部电极的外部，并且适于基于微波的能量等离子体化从气体供应部分供应的气体，并从其远端发射等离子体化气体; 以及连接到等离子体产生喷嘴的远端的适配器。 在等离子体产生装置中，等离子体产生喷嘴的内电极和外电极被设置成允许在它们之间引起辉光放电，以便在其间限定的空间中等离子体化气体，并且根据新的气体供应 该空间在大气压下从等离子体生成喷嘴的远端的空间的环状喷口排出等离子体化气体。 适配器适于将环形喷嘴转换成其纵向喷口。