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公开(公告)号：US20110291566A1
公开(公告)日：2011-12-01
申请号：US13119491
申请日：2010-02-12
申请人： Ilya V. Bezel , Anatoly Shchemelinin , Eugene Shifrin , Matthew W. Derstine , Richard W. Solarz
发明人： Ilya V. Bezel , Anatoly Shchemelinin , Eugene Shifrin , Matthew W. Derstine , Richard W. Solarz
IPC分类号： H05H1/24
CPC分类号： G21B1/23
摘要： A method of sustaining a plasma, by focusing a first wavelength of electromagnetic radiation into a gas within a volume, where the first wavelength is substantially absorbed by a first species of the gas and delivers energy into a first region of a plasma having a first size and a first temperature. A second wavelength of electromagnetic radiation is focused into the first region of the plasma, where the second wavelength is different than the first wavelength and is substantially absorbed by a second species of the gas and delivers energy into a second region of the plasma region within the first region of the plasma having a second size that is smaller than the first size and a second temperature that is greater than the first temperature.
摘要翻译： 一种通过将电磁辐射的第一波长聚焦到体积内的气体中来维持等离子体的方法，其中第一波长基本上被第一种气体吸收，并将能量传递到具有第一尺寸的等离子体的第一区域 和第一温度。 电磁辐射的第二波长被聚焦到等离子体的第一区域中，其中第二波长不同于第一波长，并且基本上被第二种气体吸收，并将能量传递到等离子体区域的第二区域内 等离子体的第一区域具有小于第一尺寸的第二尺寸和大于第一温度的第二温度。
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2.发明授权Microchannel cooled edge cladding to establish an adiabatic boundary condition in a slab laser 失效微通道冷却边缘包层在平板激光器中建立绝热边界条件公开(公告)号：US06738399B1
公开(公告)日：2004-05-18
申请号：US09861495
申请日：2001-05-17
IPC分类号： H01S304
CPC分类号： H01S3/042 , H01S3/0407 , H01S3/1641 , H01S2301/02
摘要： The present invention provides an edge cladding for a slab laser, the edge cladding comprising a cooling channel system therein.
摘要翻译： 本发明提供了一种用于板坯激光器的边缘包层，其中边缘包层包括其中的冷却通道系统。
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3.发明授权EUV high throughput inspection system for defect detection on patterned EUV masks, mask blanks, and wafers 有权EUV高通量检测系统，用于在图案化的EUV掩模，掩模毛坯和晶片上进行缺陷检测公开(公告)号：US08553217B2
公开(公告)日：2013-10-08
申请号：US12812950
申请日：2010-06-18
IPC分类号： G01N21/00
CPC分类号： G01N21/95 , G01N21/8806 , G01N21/9501 , G01N21/956 , G01N2021/95676 , G01N2201/068 , G03F1/84 , G03F7/70616 , H05G2/008
摘要： Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.
摘要翻译： 对EUV图案化掩模，空白掩模和由EUV图案化掩模生成的图案化晶片的检查需要高倍率和在图像平面上的大视场。 EUV检查系统可以包括指向检查表面的光源，用于检测从被检查表面偏转的光的检测器和用于将来自被检查表面的光引导到检测器的光学配置。 特别地，检测器可以包括多个传感器模块。 另外，光学配置可以包括在小于5米长的光路内提供至少100倍的放大倍数的多个反射镜。 在一个实施例中，光路大约2-3米长。
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公开(公告)号：US08218221B1
公开(公告)日：2012-07-10
申请号：US12195271
申请日：2008-08-20
申请人： Richard W. Solarz
发明人： Richard W. Solarz
CPC分类号： H01L33/0095 , G01N21/6489 , G01R31/311
摘要： A method of generating a photoluminescence map for an indium gallium nitride (InGaN) well can include presenting data on a pixel by pixel basis. The data can be generated as a function of emission wavelength, line width of emission, polarization of emission, and intensity of emission. The data can also be generated as a function of excitation polarization and polarization angle orientation with respect to film crystalline axes of the InGaN well. The data can also be generated as a function of multiple wavelengths of light to generate the photoluminescence map. The photoluminescence maps can be correlated to device internal quantum efficiency as measured in test devices. The resulting correlation maps can serve as line monitors of indium rich InGaN wafers used for green LEDs.
摘要翻译： 产生铟镓氮化物（InGaN）的光致发光图的方法可以包括逐个呈现数据。 数据可以作为发射波长，发射线宽度，发射极化和发射强度的函数产生。 该数据也可以作为相对于InGaN阱的膜晶轴的激发偏振和偏振角取向的函数而产生。 也可以根据多个波长的光产生数据以产生光致发光图。 光致发光图可以与在测试装置中测量的器件内部量子效率相关。 所得到的相关图可以用作用于绿色LED的富铟InGaN晶片的线监视器。
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公开(公告)号：US08698399B2
公开(公告)日：2014-04-15
申请号：US13119491
申请日：2010-02-12
申请人： Ilya V. Bezel , Anatoly Shchemelinin , Eugene Shifrin , Matthew W. Derstine , Richard W. Solarz
发明人： Ilya V. Bezel , Anatoly Shchemelinin , Eugene Shifrin , Matthew W. Derstine , Richard W. Solarz
IPC分类号： H05H1/24
CPC分类号： G21B1/23
摘要： A method of sustaining a plasma, by focusing a first wavelength of electromagnetic radiation into a gas within a volume, where the first wavelength is substantially absorbed by a first species of the gas and delivers energy into a first region of a plasma having a first size and a first temperature. A second wavelength of electromagnetic radiation is focused into the first region of the plasma, where the second wavelength is different than the first wavelength and is substantially absorbed by a second species of the gas and delivers energy into a second region of the plasma region within the first region of the plasma having a second size that is smaller than the first size and a second temperature that is greater than the first temperature.
摘要翻译： 一种通过将电磁辐射的第一波长聚焦到体积内的气体中来维持等离子体的方法，其中第一波长基本上被第一种气体吸收，并将能量传递到具有第一尺寸的等离子体的第一区域 和第一温度。 电磁辐射的第二波长被聚焦到等离子体的第一区域中，其中第二波长不同于第一波长，并且基本上被第二种气体吸收，并将能量传递到等离子体区域的第二区域内 等离子体的第一区域具有小于第一尺寸的第二尺寸和大于第一温度的第二温度。
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公开(公告)号：US20120205546A1
公开(公告)日：2012-08-16
申请号：US13026926
申请日：2011-02-14
CPC分类号： G01N21/9501 , G01N21/718 , G01N21/8806 , G01N21/956 , G01N2201/061 , G03F7/70033 , G03F7/7065 , H01L22/12
摘要： A wafer inspection system includes a laser droplet plasma (LDP) light source that generates light with sufficient radiance to enable bright field inspection at wavelengths down to 40 nanometers. Light generated by the LDP source is directed to the wafer and light from the illuminated wafer is collected by a high NA objective with all reflective elements. A detector detects the collected light for further image processing. The LDP source includes a droplet generator that dispenses droplets of a feed material. An excitation light generated by a laser is focused on a droplet of the feed material. The interaction of the excitation light with the droplet generates a plasma that emits illumination light with a radiance of at least 10 W/mm2-sr within a spectral range from 40 nanometers to 200 nanometers.
摘要翻译： 晶片检查系统包括激光液滴等离子体（LDP）光源，其产生具有足够辐射度的光，以在低至40纳米的波长下进行明场检测。 由LDP源产生的光被引导到晶片，并且来自被照射晶片的光被具有所有反射元件的高NA物镜收集。 检测器检测收集的光用于进一步的图像处理。 LDP源包括液滴发生器，其分配进料的液滴。 由激光产生的激发光聚焦在馈送材料的液滴上。 激发光与液滴的相互作用产生等离子体，其在40纳米至200纳米的光谱范围内发射具有至少10W / mm2-sr辐射的照明光。
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公开(公告)号：US08575576B2
公开(公告)日：2013-11-05
申请号：US13026926
申请日：2011-02-14
CPC分类号： G01N21/9501 , G01N21/718 , G01N21/8806 , G01N21/956 , G01N2201/061 , G03F7/70033 , G03F7/7065 , H01L22/12
摘要： A wafer inspection system includes a laser droplet plasma (LDP) light source that generates light with sufficient radiance to enable bright field inspection at wavelengths down to 40 nanometers. Light generated by the LDP source is directed to the wafer and light from the illuminated wafer is collected by a high NA objective with all reflective elements. A detector detects the collected light for further image processing. The LDP source includes a droplet generator that dispenses droplets of a feed material. An excitation light generated by a laser is focused on a droplet of the feed material. The interaction of the excitation light with the droplet generates a plasma that emits illumination light with a radiance of at least 10 W/mm2-sr within a spectral range from 40 nanometers to 200 nanometers.
摘要翻译： 晶片检查系统包括激光液滴等离子体（LDP）光源，其产生具有足够辐射度的光，以在低至40纳米的波长下进行明场检测。 由LDP源产生的光被引导到晶片，并且来自被照射晶片的光被具有所有反射元件的高NA物镜收集。 检测器检测收集的光用于进一步的图像处理。 LDP源包括液滴发生器，其分配进料的液滴。 由激光产生的激发光聚焦在馈送材料的液滴上。 激发光与液滴的相互作用产生等离子体，其在40纳米至200纳米的光谱范围内发射具有至少10W / mm2-sr辐射的照明光。
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8.发明申请EUV High Throughput Inspection System For Defect Detection On Patterned EUV Masks, Mask Blanks, And Wafers 有权EUV高通量检测系统，用于在图案化的EUV面罩，面罩空白和晶圆上进行缺陷检测公开(公告)号：US20110116077A1
公开(公告)日：2011-05-19
申请号：US12812950
申请日：2010-06-18
申请人： Yung-Ho Chuang , Richard W. Solarz , David R. Shafer , Bing-Ming Benjamin Tsai , David L. Brown
发明人： Yung-Ho Chuang , Richard W. Solarz , David R. Shafer , Bing-Ming Benjamin Tsai , David L. Brown
IPC分类号： G01N21/956
CPC分类号： G01N21/95 , G01N21/8806 , G01N21/9501 , G01N21/956 , G01N2021/95676 , G01N2201/068 , G03F1/84 , G03F7/70616 , H05G2/008
摘要： Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.
摘要翻译： 对EUV图案化掩模，空白掩模和由EUV图案化掩模生成的图案化晶片的检查需要高倍率和在图像平面上的大视场。 EUV检查系统可以包括指向检查表面的光源，用于检测从被检查表面偏转的光的检测器和用于将来自被检查表面的光引导到检测器的光学配置。 特别地，检测器可以包括多个传感器模块。 另外，光学配置可以包括在小于5米长的光路内提供至少100倍的放大倍数的多个反射镜。 在一个实施例中，光路大约2-3米长。
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