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公开(公告)号：US20230294240A1
公开(公告)日：2023-09-21
申请号：US18322005
申请日：2023-05-23
IPC分类号： B24B37/24 , H01L21/321 , H01L21/3105 , B24B37/04 , H01L21/306
CPC分类号： B24B37/24 , H01L21/3212 , H01L21/31053 , B24B37/042 , H01L21/30625 , H01L21/31058 , H10B41/20
摘要： The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4′-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4′-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 50 to 90, a shear storage modulus (G′) at 65° C. of from 70 to 500 MPa, and a damping component (G″/G′ measured by shear dynamic mechanical analysis (DMA), ASTM D5279-08 (2008)) at 50° C. of from 0.06 to 0.13.
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公开(公告)号：US10086494B2
公开(公告)日：2018-10-02
申请号：US15264056
申请日：2016-09-13
发明人： Jonathan G. Weis , George C. Jacob , Bhawesh Kumar , Sarah E. Mastroianni , Wenjun Xu , Nan-Rong Chiou , Mohammad T. Islam
IPC分类号： B24B37/24 , B24D11/00 , B24B37/22 , B24B53/017
摘要： A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.
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3.发明申请公开(公告)号：US20180071888A1
公开(公告)日：2018-03-15
申请号：US15264056
申请日：2016-09-13
发明人： Jonathan G. Weis , George C. Jacob , Bhawesh Kumar , Sarah E. Mastroianni , Wenjun Xu , Nan-Rong Chiou , Mohammad T. Islam
IPC分类号： B24B37/24 , B24B53/017
CPC分类号： B24B37/245 , B24B37/22 , B24B37/24 , B24B53/017 , B24D11/00
摘要： A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.
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公开(公告)号：US20230339067A1
公开(公告)日：2023-10-26
申请号：US17660096
申请日：2022-04-21
发明人： Zhan Liu , Nan-Rong Chiou , Michael E. Mills
摘要： A chemical mechanical polishing pad comprising a substantially non-porous polishing layer, the polishing layer comprising a polymer matrix and agglomerates of polymer particles embedded in the polymer matrix wherein the polymer particles are present in amounts of 5 to 35 weight percent based on weight of the polishing layer, the agglomerates have a size of greater than 1 μm, the polymer particles have a tensile modulus higher than a tensile modulus of the polymer matrix. The polishing layer viscoelastic and has a GEL of greater than 1000 Pa−1. Polishing a metal/insulator composite with such a pad can result in low amounts of dishing of the metal feature.
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公开(公告)号：US20230390889A1
公开(公告)日：2023-12-07
申请号：US17805044
申请日：2022-06-02
发明人： Nan-Rong Chiou
摘要： A polishing pad for chemical mechanical polishing comprises: a polishing layer that comprises a polymer matrix that is the reaction product of an isocyanate terminated oligomer or polymer with a curative blend comprising a mono-aromatic polyamine curative and a polyamine curative having two or more aromatic rings, wherein the polymer matrix has hard segment domains and soft segment domains wherein pores are present in the polymer matrix, such pores being formed by expansion of pre-expanded fluid filled polymeric microspheres such expansion occurring during reaction of the isocyanate terminated oligomer or polymer with the mono-aryl amine curative and the poly-aryl amine curative, wherein the pores have a unimodal size distribution and wherein the polishing layer has a specific gravity of less than 0.70 g/cm3.
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6.发明授权公开(公告)号：US10207388B2
公开(公告)日：2019-02-19
申请号：US15491610
申请日：2017-04-19
IPC分类号： B24B37/24 , B24B37/20 , H01L21/306 , H01L21/66 , B24B37/013
摘要： The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine, all weight percent's based on the total solids weight of the reaction mixture.
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公开(公告)号：US20180345448A1
公开(公告)日：2018-12-06
申请号：US15615254
申请日：2017-06-06
CPC分类号： B24B37/24 , B24B37/042 , B24B37/22
摘要： The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4′-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4′-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 60 to 90, a shear storage modulus (G′) at 65° C. of from 125 to 500 MPa, and a damping component (G″/G′ measured by shear dynamic mechanical analysis (DMA), ASTM D5279-08 (2008)) at 50° C. of from 0.06 to 0.13.
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8.发明申请公开(公告)号：US20180304439A1
公开(公告)日：2018-10-25
申请号：US15910187
申请日：2018-03-02
IPC分类号： B24B37/20 , B24B37/24 , H01L21/306 , H01L21/66
CPC分类号： B24B37/205 , B24B37/24 , H01L21/30625 , H01L22/26
摘要： The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average to molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine or bismuth neodecanoate, all weight percent's based on the total solids weight of the reaction mixture.
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公开(公告)号：US20240091901A1
公开(公告)日：2024-03-21
申请号：US18503445
申请日：2023-11-07
摘要： A polishing pad has a polishing layer comprising a polymer matrix comprising the reaction product of an isocyanate terminated urethane prepolymer and a chlorine-free aromatic polyamine cure agent and chlorine-free microelements. The microelements can be expanded, hollow microelements. The microelements can have a specific gravity measured of 0.01 to 0.2. The microelements can have a volume averaged particle size of 1 to 120 or 15 to 30 micrometers. The polishing layer is chlorine free.
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公开(公告)号：US20230390888A1
公开(公告)日：2023-12-07
申请号：US17805037
申请日：2022-06-02
发明人： Nan-Rong Chiou
IPC分类号： B24B37/24
CPC分类号： B24B37/24
摘要： A polishing pad for chemical mechanical polishing comprises a polishing layer which comprises a polymer matrix which is the reaction product of an isocyanate terminated oligomer or polymer, with a curative blend comprising two or more polyamine curatives wherein pores are present in the polymer matrix, such pores being formed by expansion of pre-expanded fluid filled polymeric microspheres such expansion occurring during reaction of the isocyanate terminated oligomer or polymer with the two or more curatives, wherein the polishing layer is characterized by one or more of a ratio of shear loss modulus (G″) at 104° C. to shear loss modulus (G″) at 150° C. of at least 5:1; and a specific gravity of the polishing layer is less than or equal to 95% of a calculated specific gravity for the isocyanate terminated oligomer or polymer, the curative blend and the pre-expanded fluid filled polymeric microspheres.
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