公开(公告)号：US20120252226A1

公开(公告)日：2012-10-04

申请号：US13426066

申请日：2012-03-21

申请人： Yoshiro KABE ,  Takashi KOBAYASHI ,  Ryota YONEZAWA

发明人： Yoshiro KABE ,  Takashi KOBAYASHI ,  Ryota YONEZAWA

IPC分类号： H01L21/316

CPC分类号： H01J37/32449 ,  C23C8/36 ,  H01J37/32192 ,  H01J37/32422 ,  H01J37/32577 ,  H01J37/32706 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/76224

摘要： A plasma processing method performs a plasma oxidation on a substrate, on which a trench is formed after an oxide film is formed, by using a plasma processing apparatus for plasma-processing an object by using microwave plasma. In the plasma processing method, the substrate is mounted on a mounting table to which an ion attraction high frequency voltage is applied, and the plasma oxidation is performed while applying the ion attraction high frequency voltage to the substrate. Further, a process gas used in the plasma oxidation is a mixture of a rare gas having smaller atomic weight than that of argon gas, and oxygen gas, and the plasma processing is performed at a pressure of 6.7 to 133 Pa in a depressurized chamber.

摘要翻译： 等离子体处理方法通过使用通过使用微波等离子体对物体进行等离子体处理的等离子体处理装置，在形成有氧化膜的基板上进行等离子体氧化。 在等离子体处理方法中，将基板安装在施加有离子吸引高频电压的安装台上，同时在将离子吸引高频电压施加到基板的同时进行等离子体氧化。 此外，等离子体氧化中使用的处理气体是原子比原子量低于氩气的稀有气体和氧气的混合物，在减压室中在6.7〜133Pa的压力下进行等离子体处理。

公开(公告)号：US20120252188A1

公开(公告)日：2012-10-04

申请号：US13432151

申请日：2012-03-28

申请人： Ryota YONEZAWA ,  Kazuyoshi Yamazaki ,  Masaki Sano

发明人： Ryota YONEZAWA ,  Kazuyoshi Yamazaki ,  Masaki Sano

IPC分类号： H01L21/762 ,  H01L21/318

CPC分类号： H01L21/02247 ,  C23C8/36 ,  H01L21/02238 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/76224

摘要： A plasma processing method for use in device isolation by shallow trench isolation in which an insulating film is embedded in a trench formed in silicon and the insulating film is planarized to form a device isolation film, the method includes a plasma nitriding the silicon of an inner wall surface of the trench by using a plasma before embedding the insulating film in the trench. The plasma nitriding is performed by using a plasma of a processing gas containing a nitrogen-containing gas under conditions in which a processing pressure ranges from 1.3 Pa to 187 Pa and a ratio of a volumetric flow rate of the nitrogen-containing gas to a volumetric flow rate of the entire processing gas ranges from 1% to 80% such that a silicon nitride film is formed on the inner wall surface of the trench to have a thickness of 1 to 10 nm.

摘要翻译： 一种等离子体处理方法，用于通过浅沟槽隔离的器件隔离，其中将绝缘膜嵌入形成在硅中的沟槽中，并且绝缘膜被平坦化以形成器件隔离膜，该方法包括等离子体氮化内部的硅 在将绝缘膜嵌入沟槽中之前通过使用等离子体的沟槽的壁表面。 在处理压力为1.3Pa〜187Pa的条件下，通过使用含有含氮气体的处理气体的等离子体进行等离子体氮化，并且将含氮气体的体积流量与体积流量 整个处理气体的流量范围为1％至80％，使得在沟槽的内壁表面上形成厚度为1至10nm的氮化硅膜。