公开(公告)号：US20120252226A1

公开(公告)日：2012-10-04

申请号：US13426066

申请日：2012-03-21

申请人： Yoshiro KABE ,  Takashi KOBAYASHI ,  Ryota YONEZAWA

发明人： Yoshiro KABE ,  Takashi KOBAYASHI ,  Ryota YONEZAWA

IPC分类号： H01L21/316

CPC分类号： H01J37/32449 ,  C23C8/36 ,  H01J37/32192 ,  H01J37/32422 ,  H01J37/32577 ,  H01J37/32706 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/76224

摘要： A plasma processing method performs a plasma oxidation on a substrate, on which a trench is formed after an oxide film is formed, by using a plasma processing apparatus for plasma-processing an object by using microwave plasma. In the plasma processing method, the substrate is mounted on a mounting table to which an ion attraction high frequency voltage is applied, and the plasma oxidation is performed while applying the ion attraction high frequency voltage to the substrate. Further, a process gas used in the plasma oxidation is a mixture of a rare gas having smaller atomic weight than that of argon gas, and oxygen gas, and the plasma processing is performed at a pressure of 6.7 to 133 Pa in a depressurized chamber.

摘要翻译： 等离子体处理方法通过使用通过使用微波等离子体对物体进行等离子体处理的等离子体处理装置，在形成有氧化膜的基板上进行等离子体氧化。 在等离子体处理方法中，将基板安装在施加有离子吸引高频电压的安装台上，同时在将离子吸引高频电压施加到基板的同时进行等离子体氧化。 此外，等离子体氧化中使用的处理气体是原子比原子量低于氩气的稀有气体和氧气的混合物，在减压室中在6.7〜133Pa的压力下进行等离子体处理。

公开(公告)号：US20110171835A1

公开(公告)日：2011-07-14

申请号：US13074062

申请日：2011-03-29

申请人： Yoshiro KABE ,  Hideo NAKAMURA ,  Junichi KITAGAWA

发明人： Yoshiro KABE ,  Hideo NAKAMURA ,  Junichi KITAGAWA

IPC分类号： H01L21/31 ,  C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52

CPC分类号： H01L21/31662 ,  H01J37/32192 ,  H01J37/32449 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/28211 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7881 ,  H01L29/792

摘要： A method of forming a silicon oxide film on silicon exposed on a surface of a workpiece includes mounting the workpiece on a mounting table in a processing chamber; generating plasma of a process gas containing oxygen by supplying the process gas into the processing chamber; applying a bias to the workpiece by supplying high-frequency power to the mounting table; and forming the silicon oxide film by applying the plasma to the biased workpiece and oxidizing the silicon. A ratio of oxygen in the process gas is set to be in the range of 0.1% to 10%. A pressure in the processing chamber is set to be in the range of 1.3 Pa to 266.6 Pa upon forming the silicon oxide film. An output of the high-frequency power is set to be in the range of 0.14 W/cm2 to 2.13 W/cm2 per unit area of the workpiece.

摘要翻译： 在暴露在工件表面上的硅上形成氧化硅膜的方法包括将工件安装在处理室中的安装台上; 通过将处理气体供给到处理室来产生含氧工艺气体的等离子体; 通过向安装台提供高频电力向工件施加偏压; 以及通过将等离子体施加到偏置的工件并氧化硅来形成氧化硅膜。 处理气体中的氧的比例设定在0.1％〜10％的范围内。 处理室中的压力在形成氧化硅膜时设定在1.3Pa至266.6Pa的范围内。 将高频功率的输出设定为每单位面积的工件的0.14W / cm 2〜2.13W / cm 2的范围。

公开(公告)号：US20120248583A1

公开(公告)日：2012-10-04

申请号：US13432170

申请日：2012-03-28

申请人： Yoshiro KABE ,  Yoshinori Osaki

发明人： Yoshiro KABE ,  Yoshinori Osaki

IPC分类号： H01L29/02 ,  H01L21/31

CPC分类号： H01L21/02236 ,  H01L21/02252 ,  H01L21/28255 ,  H01L21/3105 ,  H01L29/513 ,  H01L29/517

摘要： A method for forming a germanium oxide film between a germanium substrate and an insulating film includes producing atomic oxygen on a surface of the insulating film formed on a surface of the germanium substrate by generating a plasma of a processing gas containing oxygen atom-containing gas. The method further includes forming a germanium oxide film by reacting germanium with the atomic oxygen which has reached the germanium substrate after penetrating the insulating film by irradiating the plasma on the surface of the insulating film.

摘要翻译： 在锗基板和绝缘膜之间形成锗氧化物膜的方法包括通过产生含有含氧原子的气体的处理气体的等离子体在锗基板的表面上形成的绝缘膜的表面上产生原子氧。 该方法还包括通过在绝缘膜的表面上照射等离子体而使锗与穿过绝缘膜之后到达锗基板的原子氧反应形成氧化锗膜。