摘要:
A plasma processing method performs a plasma oxidation on a substrate, on which a trench is formed after an oxide film is formed, by using a plasma processing apparatus for plasma-processing an object by using microwave plasma. In the plasma processing method, the substrate is mounted on a mounting table to which an ion attraction high frequency voltage is applied, and the plasma oxidation is performed while applying the ion attraction high frequency voltage to the substrate. Further, a process gas used in the plasma oxidation is a mixture of a rare gas having smaller atomic weight than that of argon gas, and oxygen gas, and the plasma processing is performed at a pressure of 6.7 to 133 Pa in a depressurized chamber.
摘要:
A non-aqueous electrolyte secondary battery includes an electrode body including a positive electrode and a negative electrode superimposed upon each other with a separator interposed therebetween. The negative electrode is superimposed upon the positive electrode in a state where a negative electrode active material layer, except the part on a proximal end part of a negative electrode tab, is positioned inside an outer edge of a positive electrode active material layer of the positive electrode. A width H1 of the negative electrode active material layer including the part on the proximal end part of the negative electrode tab, width H2 of the negative electrode active material layer or negative electrode current collector at a part other than the negative electrode tab, and width H3 of the positive electrode active material layer are formed to satisfy the relationships of H2
摘要:
A computer executes processes of: setting the upper limit of an available processing capacity for each user; setting a plurality of virtual machines for each of the users; and distributing the processing capacity to the plurality of virtual machines for each of the users within the upper limit of the processing capacity set for each of the users.
摘要:
A semiconductor memory device in which the cell area can be decreased and the minimum feature size is not restricted by the thickness of the material forming the memory cell. In a semiconductor memory device, a gate insulating film, a channel extending in a direction X, and a resistance change element extending in the direction X are formed successively above multiple word lines extending in a direction Y, and a portion of the channel and a portion of the resistance change element are disposed above each of the plurality of the word lines. Such configuration can decrease the cell area and ensure the degree of design freedom.
摘要:
A permanent magnet rotating electric machine comprises a stator having stator windings wound round a stator iron core and a permanent magnet rotor having a plurality of inserted permanent magnets in which the polarity is alternately arranged in the peripheral direction in the rotor iron core. The rotor iron core of the permanent magnets is composed of magnetic pole pieces, auxiliary magnetic poles, and a stator yoke, and furthermore has concavities formed on the air gap face of the magnetic pole pieces of the rotor iron core of the permanent magnets, gently tilting from the central part of the magnetic poles to the end thereof. In a permanent magnet rotating electric machine, effects of iron loss are reduced, and an electric car using highly efficient permanent magnet rotating electric machine are realized.
摘要:
An image forming apparatus including an image forming apparatus body, a cassette attaching section, a media cassette, a release portion, a first ground conducting route and a second ground conducting route is provided. The cassette attaching section includes a media supplying roller. The media cassette is removably installed in the cassette attaching section. The media cassette includes a loading plate, a pushing up member and a plate holding portion. The release portion engages the plate holding portion. The first ground conducting route conducts static electricity charged on the media and includes a conducting portion. The second ground conducting route conducts static electricity charged on the media when the media is conveyed by the media supplying roller.
摘要:
A piezoelectric vibration piece that can ensure good drive level characteristics and a piezoelectric vibrator, oscillator, electronic device and radio-controlled timepiece in which the piezoelectric vibration piece is used are provided. The width of the base-end side of the grooves 5 is narrower than that of the tip side of the grooves 5. The base 4 includes: a mount section 4a on the outer surface of which mount electrodes 12, 13 are formed to mount the piezoelectric vibration piece 1; and an intermediate section 4b that is connected to the mount section 4a and the pair of vibrating arms 3a, 3b so as to be positioned between the mount section 4a and the pair of vibrating arms 3a, 3b, on the outer surface of which leading electrodes 14a, 14b that connect the pair of excitation electrodes 10, 11 and the mount electrodes 12, 13 are formed. The width of the mount section 4a is wider than that of the intermediate section 4b. In step parts between the mount section 4a and the intermediate section 4b, side surfaces of the mount section 4a and side surfaces of the intermediate section 4b are connected via tilted surfaces 4c that tilt with respect to a longitudinal direction.
摘要:
A virtual computer system executes a virtual computer control program on a physical computer and thereby causes guest programs on the logical partitions, respectively. The virtual computer control program includes an error recovery module to periodically recover from an error in a cache memory, an error interruption handler module responsive to an interruption notice caused by an error which has occurred in the cache memory, to recover from an error in the cache memory, and an error data initialization module to recover from an error in the cache memory with shutdown or restart of one of the logical partitions as a momentum. And the virtual computer control program conducts recovery processing from an error in the cache memory.
摘要:
A semiconductor memory device having a diode and a transistor connected in series, which prevents carriers from going from the diode into the transistor, thereby reducing the possibility of transistor deterioration. A structure to annihilate carriers from the diode is provided between a channel layer of the transistor and a diode semiconductor layer of the diode where the carriers are generated.
摘要:
A semiconductor device includes a semiconductor substrate; a metal electrode wiring laminate on the semiconductor substrate, the metal electrode wiring laminate being patterned with a predetermined wiring pattern; the metal electrode wiring laminate including an undercoating barrier metal laminate and aluminum or aluminum alloy film on the undercoating barrier metal laminate; and organic passivation film covering the metal electrode wiring laminate, wherein the barrier metal laminate is a three-layered laminate including titanium films sandwiching a titanium nitride film. The semiconductor device according to the invention facilitates improving the moisture resistance of the portion of the barrier metal laminate exposed temporarily in the manufacturing process, facilitates employing only one passivation film, facilitates preventing the failures caused by cracks from occurring and the failures caused by Si nodules remaining in the aluminum alloy from increasing.