公开(公告)号：US06565416B2

公开(公告)日：2003-05-20

申请号：US09805860

申请日：2001-03-13

申请人： Samuel Vance Dunton ,  Yizhi Xiong

发明人： Samuel Vance Dunton ,  Yizhi Xiong

IPC分类号： B24B4900

CPC分类号： B24B37/013 ,  B24B49/12 ,  B24D7/12

摘要： A multi-platen chemical-mechanical polishing system is used to polish a wafer. The wafer is polished at a first station. During polishing, an endpoint is detected. The endpoint is detected by generating optical radiation by a first light source. The first optical radiation travels through a translucent area in a surface of a first platen and travels through a first polishing pad. After being reflected by the wafer, the optical radiation returns through the first polishing pad through the translucent window to a first optical radiation detector. The first polishing pad has a uniform surface in that no part of the surface of the first polishing pad includes transparent material through which non-scattered optical radiation originating from the first light source can pass and be detected by the first optical radiation detector. Optical radiation that travels through the first polishing pad and is detected by the first optical radiation detector is haze scattered by inclusions within the first polishing pad. Non-scattered light is absorbed by the first polishing pad. The wafer is also polished at a second station. During polishing a final endpoint is detected. The final endpoint is detected by generating optical radiation by a second light source. The second optical radiation travels through a translucent area in a surface of a second platen and travels through a window embedded in a second polishing pad. After being reflected by the wafer, the optical radiation returns through the window embedded in the second polishing pad, through the translucent area in the surface of the second platen, to a second optical radiation detector.

摘要翻译： 多台板化学机械抛光系统用于抛光晶片。 晶片在第一站被抛光。 在抛光期间，检测到一个端点。 通过由第一光源产生光辐射来检测端点。 第一光辐射穿过第一压板的表面中的半透明区域并且穿过第一抛光垫。 在被晶片反射之后，光辐射通过第一抛光垫通过半透明窗口返回到第一光学辐射检测器。 第一抛光垫具有均匀的表面，因为第一抛光垫的表面的任何部分都不包括透明材料，通过该透明材料，源自第一光源的非散射光辐射可以通过第一光学辐射检测器检测。 穿过第一抛光垫并由第一光学辐射检测器检测的光辐射是由第一抛光垫内的夹杂物散射的雾。 非散射光被第一抛光垫吸收。 晶片也在第二站抛光。 在抛光期间，检测到最终的终点。 通过由第二光源产生光辐射来检测最终端点。 第二光辐射穿过第二压板的表面中的半透明区域并且穿过嵌入第二抛光垫中的窗口。 在被晶片反射之后，光学辐射通过嵌入第二抛光垫中的窗口通过第二压板的表面中的半透明区域返回到第二光学辐射检测器。

公开(公告)号：US06196900B1

公开(公告)日：2001-03-06

申请号：US09390455

申请日：1999-09-07

申请人： Liming Zhang ,  Samuel Vance Dunton ,  Milind Ganesh Weling

发明人： Liming Zhang ,  Samuel Vance Dunton ,  Milind Ganesh Weling

IPC分类号： B24B100

CPC分类号： B24B53/017 ,  B24B1/04 ,  B24B41/061 ,  B24B57/02

摘要： The present invention is an ultrasonic transducer slurry dispensing device and method for efficiently distributing slurry. The present invention utilizes ultrasonic energy to facilitate efficient slurry application in a IC wafer fabrication process to permits reduced manufacturing times and slurry consumption during IC wafer fabrication. In one embodiment a chemical mechanical polishing (CMP) ultrasonic transducer slurry dispenser device includes a slurry dispensing slot, a slurry chamber coupled and an ultrasonic transducer. The slurry chamber receives the slurry and transports it to the slurry dispensing slots that apply slurry to a polishing pad. The ultrasonic transducer transmits ultrasonic energy to the slurry. The transmitted ultrasonic energy permits an ultrasonic transducer slurry dispensing device and method of the present invention to achieve a relatively consistent removal rate and a smoother polished wafer surface by facilitating particle disbursement, polishing pad conditioning and uniform slurry distribution.

摘要翻译： 本发明是一种用于高效分散浆料的超声波换能器浆料分配装置和方法。 本发明利用超声波能量来促进IC晶片制造工艺中有效的浆料应用，以允许在IC晶片制造期间减少制造时间和浆料消耗。 在一个实施例中，化学机械抛光（CMP）超声换能器浆料分配器装置包括浆料分配槽，耦合的浆料室和超声换能器。 浆料室接收浆料并将其输送到将浆料施加到抛光垫的浆料分配槽。 超声波换能器将超声波能量传递给浆料。 透射的超声波能量允许本发明的超声波换能器浆料分配装置和方法通过促进粒子分配，抛光垫调节和均匀的浆料分布来实现相对一致的去除速率和更光滑的抛光晶片表面。

公开(公告)号：US6028013A

公开(公告)日：2000-02-22

申请号：US306239

申请日：1999-05-06

申请人： Rao V. Annapragada ,  Samuel Vance Dunton ,  Milind Ganesh Weling ,  Subhas Bothra

发明人： Rao V. Annapragada ,  Samuel Vance Dunton ,  Milind Ganesh Weling ,  Subhas Bothra

IPC分类号： H01L21/3105 ,  H01L21/316 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/02129 ,  H01L21/02131 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/31053 ,  H01L21/76819

摘要： A method of making an inter-metal oxide layer over a patterned metallization layer of a substrate, and the resulting structure having the inter-metal oxide layer are provided. The method includes depositing a fluorine doped high density plasma (HDP) oxide layer over the patterned metallization layer. The fluorine doped HDP oxide layer is configured to evenly deposit in high aspect ratio regions of the patterned metallization layer. The method also includes depositing a plasma enhanced chemical vapor deposition (PECVD) oxide layer over the fluorine doped HDP oxide layer. The PECVD oxide layer is doped with a phosphorous material. A CMP operation is then performed over the PECVD oxide layer to remove topographical oxide variations, such that the CMP operation will be configured to preferably leave at least a coating of the PECVD oxide layer over the HDP oxide layer. In this example, the phosphorous material in the PECVD oxide is configured to assist in creating a substantial moisture barrier over the fluorine doped HDP oxide layer and thus protect metallization lines from corrosion. In an alternative example, a non-conductive, highly moisture resistant barrier layer can be deposited in between the fluorine doped HDP oxide layer and the PECVD oxide.

摘要翻译： 提供了在衬底的图案化金属化层上形成金属间氧化物层的方法，并且提供了所得到的具有金属间氧化物层的结构。 该方法包括在图案化的金属化层上沉积氟掺杂的高密度等离子体（HDP）氧化物层。 氟掺杂的HDP氧化物层被配置为均匀沉积在图案化金属化层的高纵横比区域中。 该方法还包括在氟掺杂的HDP氧化物层上沉积等离子体增强化学气相沉积（PECVD）氧化物层。 PECVD氧化物层掺杂有磷材料。 然后在PECVD氧化物层上执行CMP操作以去除形貌氧化物变化，使得CMP操作将被配置为优选地将PECVD氧化物层的至少一层涂层留在HDP氧化物层上。 在该实施例中，PECVD氧化物中的磷材料被配置成有助于在氟掺杂的HDP氧化物层上产生显着的湿气阻挡层，从而保护金属化线不受腐蚀。 在替代实例中，可以在氟掺杂的HDP氧化物层和PECVD氧化物之间沉积非导电，高度防潮的阻挡层。

公开(公告)号：US06103634A

公开(公告)日：2000-08-15

申请号：US215071

申请日：1998-12-18

申请人： Samuel Vance Dunton

发明人： Samuel Vance Dunton

IPC分类号： H01L21/027 ,  H01L21/311 ,  H01L21/00

CPC分类号： H01L21/31116 ,  H01L21/0276

摘要： A method for fabricating semiconductor devices that allows for the integration of anti-reflective coatings into the fabrication process. A method for removing an inorganic anti-reflective coating is disclosed that includes the step of exposing the layer of inorganic anti-reflective coating to atomic fluorine. An asher is used to generate fluorine atoms from NF.sub.3 precursor gas. The NF.sub.3 precursor gas is mixed with an inert carrier such as helium. In one embodiment, sequential etch steps are performed in an asher so as to sequentially remove both a layer of photoresist and a layer of inorganic anti-reflective coating.

摘要翻译： 一种制造半导体器件的方法，其允许将抗反射涂层集成到制造工艺中。 公开了一种去除无机抗反射涂层的方法，其包括将无机抗反射涂层层暴露于原子氟的步骤。 用Asher从NF3前驱体气体中产生氟原子。 NF3前驱体气体与诸如氦的惰性载体混合。 在一个实施例中，顺序蚀刻步骤在灰化器中进行，以顺序地去除光致抗蚀剂层和无机抗反射涂层。

公开(公告)号：US06224460B1

公开(公告)日：2001-05-01

申请号：US09340487

申请日：1999-06-30

申请人： Samuel Vance Dunton ,  Yizhi Xiong

发明人： Samuel Vance Dunton ,  Yizhi Xiong

IPC分类号： B24B4900

CPC分类号： B24B37/013 ,  B24B49/12 ,  B24D7/12

摘要： A multi-platen chemical-mechanical polishing system is used to polish a wafer. The wafer is polished at a first station. During polishing, an endpoint is detected. The endpoint is detected by generating optical radiation by a first light source. The first optical radiation travels through a translucent area in a surface of a first platen and travels through a first polishing pad. After being reflected by the wafer, the optical radiation returns through the first polishing pad through the translucent window to a first optical radiation detector. The first polishing pad has a uniform surface in that no part of the surface of the first polishing pad includes transparent material through which non-scattered optical radiation originating from the first light source can pass and be detected by the first optical radiation detector. Optical radiation that travels through the first polishing pad and is detected by the first optical radiation detector is haze scattered by inclusions within the first polishing pad. Non-scattered light is absorbed by the first polishing pad. The wafer is also polished at a second station. During polishing a final endpoint is detected. The final endpoint is detected by generating optical radiation by a second light source. The second optical radiation travels through a translucent area in a surface of a second platen and travels through a window embedded in a second polishing pad. After being reflected by the wafer, the optical radiation returns through the window embedded in the second polishing pad, through the translucent area in the surface of the second platen, to a second optical radiation detector.