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    PROBE HAVING SEPARABLE SCANHEAD
    2.
    发明申请
    PROBE HAVING SEPARABLE SCANHEAD 审中-公开
    探索具有可分离的扫描

    公开(公告)号：US20130253327A1

    公开(公告)日：2013-09-26

    申请号：US13989015

    申请日：2010-12-09

    申请人： Seokbin Ko ,  Wonho Noh ,  Sang Woong Lee ,  Jae Won Lee

    发明人： Seokbin Ko ,  Wonho Noh ,  Sang Woong Lee ,  Jae Won Lee

    IPC分类号： A61B8/00

    CPC分类号： A61B8/4455 ,  A61B8/4411 ,  A61B8/4427 ,  A61B8/4438 ,  A61B8/4444

    摘要： The invention relates to a probe that is comprised in an ultrasonic diagnostic system, wherein the probe comprises: a scanhead which includes a housing that functions as a handle, a transducer that is installed on one side of the housing, a tuning board that is accommodated within the housing and has one side connected with a PCB of the transducer, and a board connection-connector that is connected with the other side of the tuning board; and a cable assembly which has one end on which a scanhead connector detachably coupled with the board-connection connector is positioned, and has the other end on which a system connector is placed. Since the scanhead can be separated from the cable assembly such that the scanhead can be replaced, overall convenience of a user is improved greatly, and consequently, the ultrasonic diagnostic system can be miniaturized and carried in a portable form.

    摘要翻译： 本发明涉及一种包括在超声波诊断系统中的探针，其中探针包括：扫描头，其包括用作手柄的壳体，安装在壳体一侧的换能器，容纳的调谐板 并且具有与传感器的PCB连接的一侧以及与调谐板的另一侧连接的板连接连接器; 以及电缆组件，其一端具有与板连接连接器可拆卸地联接的扫描头连接器，并且另一端放置有系统连接器。 由于扫描头可以与电缆组件分离，使得可以更换扫描头，因此大大提高了用户的整体便利性，因此，超声波诊断系统可以小型化并以便携式形式携带。

    Method for fabricating thin film transistor
    6.
    发明授权
    Method for fabricating thin film transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号：US07615421B2

    公开(公告)日：2009-11-10

    申请号：US11011585

    申请日：2004-12-15

    申请人： Sang-Woong Lee ,  Jae-Young Oh ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Cheol-Ho Yu

    发明人： Sang-Woong Lee ,  Jae-Young Oh ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Cheol-Ho Yu

    IPC分类号： H01L21/84

    CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

    摘要： The present invention relates to a method for fabricating thin film transistor, more particularly, to a method for fabricating thin film transistor which not only manufactures a polycrystalline silicon layer having large grain size and containing a trace of residual metal catalyst by heat treating thereby crystallizing the metal catalyst layer after forming an amorphous silicon layer on a substrate, forming a capping layer formed of nitride film having 1.78 to 1.90 of the refraction index when crystallizing the amorphous silicon layer and forming a metal catalyst layer on the capping layer, but also controls characteristics of the polycrystalline silicon layer by controlling the refraction index of the capping layer.

    摘要翻译： 本发明涉及一种制造薄膜晶体管的方法，更具体地说，涉及制造薄膜晶体管的方法，该方法不仅通过热处理制造具有大晶粒尺寸并且含有微量残余金属催化剂的多晶硅层，从而使 在基板上形成非晶硅层之后，形成由氮化物膜形成的覆盖层，所述覆盖层在结晶非晶硅层时具有1.78〜1.90的折射率，并且在封盖层上形成金属催化剂层，而且还控制特性 的多晶硅层，通过控制覆盖层的折射率。

    Method for fabricating thin film transistor
    7.
    发明申请
    Method for fabricating thin film transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号：US20060046357A1

    公开(公告)日：2006-03-02

    申请号：US11011585

    申请日：2004-12-15

    申请人： Sang-Woong Lee ,  Jae-Young Oh ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Cheol-Ho Yu

    发明人： Sang-Woong Lee ,  Jae-Young Oh ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Cheol-Ho Yu

    IPC分类号： H01L21/84 ,  H01L21/00

    CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

    摘要： The present invention relates to a method for fabricating thin film transistor, more particularly, to a method for fabricating thin film transistor which not only manufactures a polycrystalline silicon layer having large grain size and containing a trace of residual metal catalyst by heat treating thereby crystallizing the metal catalyst layer after forming an amorphous silicon layer on a substrate, forming a capping layer formed of nitride film having 1.78 to 1.90 of the refraction index when crystallizing the amorphous silicon layer and forming a metal catalyst layer on the capping layer, but also controls characteristics of the polycrystalline silicon layer by controlling the refraction index of the capping layer. The present invention provides a method for fabricating thin film transistor comprising the steps of preparing an insulation substrate; forming an amorphous silicon layer on the substrate; forming a capping layer having 1.78 to 1.90 of the refraction index on the amorphous silicon layer; forming a metal catalyst layer on the capping layer; and crystallizing the amorphous silicon layer into a polycrystalline silicon layer by heat treating the substrate. Therefore, a method for fabricating thin film transistor fabricates a thin film transistor which has superior characteristics and is capable of controlling the characteristics by controlling the refraction index of capping layer formed of nitride film to 1.78 to 1.90 when performing crystallization by super grain silicon crystallization method, thereby obtaining a semiconductor layer having a large grain size so that electron mobility is increased, and an amount of metal catalyst remained is decreased to lower leakage current, and controlling grain size of polycrystalline silicon layer by the refraction index of the capping layer so that a polycrystalline silicon layer having desired size and uniformity is obtained.

    摘要翻译： 本发明涉及一种制造薄膜晶体管的方法，更具体地说，涉及制造薄膜晶体管的方法，该方法不仅通过热处理制造具有大晶粒尺寸并且含有微量残余金属催化剂的多晶硅层，从而使 在基板上形成非晶硅层之后，形成由氮化物膜形成的覆盖层，所述覆盖层在结晶非晶硅层时具有1.78〜1.90的折射率，并且在封盖层上形成金属催化剂层，而且还控制特性 的多晶硅层，通过控制覆盖层的折射率。 本发明提供一种制造薄膜晶体管的方法，包括以下步骤：制备绝缘衬底; 在所述基板上形成非晶硅层; 形成在非晶硅层上具有1.78至1.90折射率的覆盖层; 在覆盖层上形成金属催化剂层; 以及通过对所述衬底进行热处理将所述非晶硅层结晶成多晶硅层。 因此，制造薄膜晶体管的方法制造薄膜晶体管，其具有优异的特性，并且能够通过将由氮化物膜形成的覆盖层的折射率控制在通过超晶硅结晶法进行结晶时为1.78〜1.90的特性 从而获得具有大晶粒尺寸的电子迁移率增加的半导体层，并且减少金属催化剂的剩余量以降低泄漏电流，并且通过覆盖层的折射率控制多晶硅层的晶粒尺寸，使得 得到所需尺寸和均匀性的多晶硅层。

    Organic light emitting display and method of fabricating the same
    9.
    发明授权
    Organic light emitting display and method of fabricating the same 有权
    有机发光显示器及其制造方法

    公开(公告)号：US07573070B2

    公开(公告)日：2009-08-11

    申请号：US11017648

    申请日：2004-12-22

    申请人： Tae-Wook Kang ,  Mu-Hyun Kim ,  Myung-Won Song ,  Sang-Woong Lee

    发明人： Tae-Wook Kang ,  Mu-Hyun Kim ,  Myung-Won Song ,  Sang-Woong Lee

    IPC分类号： H01J1/66 ,  H01J1/72 ,  H01L31/12

    CPC分类号： H01L27/3246 ,  H01L51/0013

    摘要： An organic light emitting display and method of fabricating the same are provided. The organic light emitting display and the method of fabricating the same in accordance with the present invention is capable of preventing an organic layer pattern from being cut due to a step between a first electrode and an inorganic pixel defining layer by forming an inorganic pixel defining layer having an opening for exposing at least a portion of the first electrode to a small thickness using a deposition method. In addition, since the first electrode and the organic layer pattern are closely adhered during a transfer process to enable the transfer process using a laser beam having low energy, thereby improving transfer efficiency, improving luminous efficiency of the OLED, and increasing lifetime of the OLED.

    摘要翻译： 提供了一种有机发光显示器及其制造方法。 根据本发明的有机发光显示器及其制造方法能够通过形成无机像素限定层而防止有机层图案由于第一电极和无机像素限定层之间的台阶而被切割 具有用于使用沉积方法将至少一部分第一电极暴露于小厚度的开口。 此外，由于第一电极和有机层图案在转印过程中紧密粘合，以使得能够使用具有低能量的激光束进行转印处理，从而提高转印效率，提高OLED的发光效率和增加OLED的寿命 。

    Organic light emitting display and method of fabricating the same
    10.
    发明申请
    Organic light emitting display and method of fabricating the same 有权

    公开(公告)号：US20060060838A1

    公开(公告)日：2006-03-23

    申请号：US11017648

    申请日：2004-12-22

    申请人： Tae-Wook Kang ,  Mu-Hyun Kim ,  Myung-Won Song ,  Sang-Woong Lee

    发明人： Tae-Wook Kang ,  Mu-Hyun Kim ,  Myung-Won Song ,  Sang-Woong Lee

    IPC分类号： H01L29/08

    CPC分类号： H01L27/3246 ,  H01L51/0013

    摘要： An organic light emitting display and method of fabricating the same are provided. The organic light emitting display and the method of fabricating the same in accordance with the present invention is capable of preventing an organic layer pattern from being cut due to a step between a first electrode and an inorganic pixel defining layer by forming an inorganic pixel defining layer having an opening for exposing at least a portion of the first electrode to a small thickness using a deposition method. In addition, since the first electrode and the organic layer pattern are closely adhered during a transfer process to enable the transfer process using a laser beam having low energy, thereby improving transfer efficiency, improving luminous efficiency of the OLED, and increasing lifetime of the OLED.