公开(公告)号：US08366514B2

公开(公告)日：2013-02-05

申请号：US12748109

申请日：2010-03-26

申请人： Satoru Ide ,  Moriyuki Kashiwa ,  Kazuo Kobayashi ,  Noriyuki Motimaru ,  Eiichi Yamamoto ,  Tomio Kubo ,  Hiroaki Kida

发明人： Satoru Ide ,  Moriyuki Kashiwa ,  Kazuo Kobayashi ,  Noriyuki Motimaru ,  Eiichi Yamamoto ,  Tomio Kubo ,  Hiroaki Kida

IPC分类号： B24B1/00 ,  B24B5/02

CPC分类号： B24B37/00

摘要： A planarization apparatus and method that thins and planarizes a substrate by grinding and polishing the rear surface of the substrate with high throughput, and that fabricates a semiconductor substrate with reduced adhered contaminants. A planarization apparatus that houses various mechanism elements in semiconductor substrate loading/unloading stage chamber, a rear-surface polishing stage chamber, and a rear-surface grinding stage chamber. The throughput time of the rear-surface polishing stage that simultaneously polishes two substrates is typically about double the throughput time of the rear-surface grinding stage that grinds one substrate.

摘要翻译： 一种平面化装置和方法，其通过以高生产量研磨和抛光衬底的后表面来使衬底平坦化，并且制造具有减少的附着污染物的半导体衬底。 一种在半导体衬底装载/放电室中容纳各种机构元件的平面化装置，后表面抛光台室和后表面研磨台室。 同时抛光两个基材的后表面抛光阶段的生产时间通常是研磨一个基板的后表面研磨阶段的生产时间的两倍。

公开(公告)号：US20110165823A1

公开(公告)日：2011-07-07

申请号：US12748109

申请日：2010-03-26

申请人： Satoru IDE ,  Moriyuki Kashiwa ,  Kazuo Kobayashi ,  Noriyuki Motimaru ,  Eiichi Yamamoto ,  Tomio Kubo ,  Hiroaki Kida

发明人： Satoru IDE ,  Moriyuki Kashiwa ,  Kazuo Kobayashi ,  Noriyuki Motimaru ,  Eiichi Yamamoto ,  Tomio Kubo ,  Hiroaki Kida

IPC分类号： B24B1/00 ,  B24B41/00 ,  B24B7/10

CPC分类号： B24B37/00

摘要： A planarization apparatus and method that thins and planarizes a substrate by grinding and polishing the rear surface of the substrate with high throughput, and that fabricates a semiconductor substrate with reduced adhered contaminants. A planarization apparatus that houses various mechanism elements in semiconductor substrate loading/unloading stage chamber, a rear-surface polishing stage chamber, and a rear-surface grinding stage chamber. The throughput time of the rear-surface polishing stage that simultaneously polishes two substrates is typically about double the throughput time of the rear-surface grinding stage that grinds one substrate.

摘要翻译： 一种平面化装置和方法，其通过以高生产量研磨和抛光衬底的后表面来使衬底平坦化，并且制造具有减少的附着污染物的半导体衬底。 一种在半导体衬底装载/放电室中容纳各种机构元件的平面化装置，后表面抛光台室和后表面研磨台室。 同时抛光两个基材的后表面抛光阶段的生产时间通常是研磨一个基板的后表面研磨阶段的生产时间的两倍。

公开(公告)号：US06342166B1

公开(公告)日：2002-01-29

申请号：US09454530

申请日：1999-12-06

申请人： Satoru Ide ,  Kiyoshi Tanaka ,  Toshihiro Itho

发明人： Satoru Ide ,  Kiyoshi Tanaka ,  Toshihiro Itho

IPC分类号： H01L21302

CPC分类号： B24B37/013 ,  B24B49/04 ,  B24B49/12 ,  H01L21/31053

摘要： A method of detecting an end point of polishing of a wafer, comprising the steps of: using a color identifying sensor for recognizing a color component of light by applying light from a light source and by converging reflected light to an optical fiber to cause the color identifying sensor to previously recognize a color component of a substance of a wafer which must be polished; displaying an ON-state when the color component is recognized and an OFF-state when the color component is not recognized; one point (except for the central point) of the surface of the rotating wafer is irradiated with light emitted from the color identifying sensor to cause the color identifying sensor to detect the number of times (m) of off-states; and determining an end of polishing of the wafer when the detected number of times (m) coincides with the number (n) of off-states indicating an optimum end point of polishing of the wafer.

摘要翻译： 一种检测晶片抛光终点的方法，包括以下步骤：使用颜色识别传感器，用于通过施加来自光源的光来识别光的颜色分量，并且通过将反射光聚焦到光纤以使颜色 识别传感器以预先识别必须抛光的晶片的物质的颜色分量; 当识别颜色分量时显示ON状态，并且当颜色分量不被识别时显示OFF状态; 用从颜色识别传感器发出的光照射旋转晶片的表面的一个点（中心点除外），以使颜色识别传感器检测关闭状态的次数（m）; 并且当检测到的次数（m）与表示晶片的最佳抛光终点的关闭状态的数量（n）一致时，确定晶片的抛光结束。

公开(公告)号：US06520895B2

公开(公告)日：2003-02-18

申请号：US09799632

申请日：2001-03-07

申请人： Tatsuya Senga ,  Kazuo Kobayashi ,  Satoru Ide ,  Kiyoshi Tanaka

发明人： Tatsuya Senga ,  Kazuo Kobayashi ,  Satoru Ide ,  Kiyoshi Tanaka

IPC分类号： B23Q3157

CPC分类号： B24B41/068 ,  B24B37/20 ,  B24B37/26 ,  B24B37/30 ,  B24D9/085 ,  Y10T483/10 ,  Y10T483/1736 ,  Y10T483/174 ,  Y10T483/1748 ,  Y10T483/1752

摘要： A polishing device includes a wafer chuck mechanism which retains a wafer while its plane to be polished faces upward, a polishing pad component which possesses a polishing plane which polishes the wafer, a polishing head, and a shift mechanism which enables a relative displacement of said polishing pad component in relation to the wafer. A fixation and retention mechanism fixes and retains said polishing pad component to the polishing head in a detachable fashion while its polishing plane faces downward. The displacement distance of the shift mechanism ranges from the polishing position of the wafer to the exchange position of the polishing pad component, so that the polishing pad component is automatically exchanged.

摘要翻译： 抛光装置包括：晶片夹持机构，其保持待抛光面朝上的晶片;抛光垫部件，其具有抛光晶片的抛光平面;抛光头;以及变换机构，其能够使所述 抛光垫组件相对于晶片。 固定和保持机构将抛光垫组件以可拆卸的方式固定并保持在抛光头上，同时其抛光平面朝下。 换档机构的位移距离范围从晶片的研磨位置到抛光垫部件的更换位置，使得抛光垫部件自动更换。

公开(公告)号：US06183656B2

公开(公告)日：2001-02-06

申请号：US09519879

申请日：2000-03-06

申请人： Satoru Ide ,  Tsutomu Yamada ,  Norio Hayashi

发明人： Satoru Ide ,  Tsutomu Yamada ,  Norio Hayashi

IPC分类号： H01L21302

CPC分类号： B24B37/013 ,  B24B49/12 ,  G11B5/8404

摘要： A method of detecting an end point of polishing arranged to perform CMP polishing with which an insulating layer of a wafer incorporating a substrate having a metal-containing permalloy layer formed thereon and the insulating layer formed on the metal-containing permalloy layer is chemimechanically polished to expose the flat permalloy layer, the method of detecting an end point of polishing, having the steps of: collecting abrasive material slurry on a surface plate for polishing as a continuous flow from the start or during CMP polishing; continuously mixing a color developing reagent with the collected continuous flow to prepare a specimen for the continuos flow; reading the color of the specimen as a digital value (Ii) by a color identifying sensor; and determining a moment of time at which the digital value (Ii) reaches a digital value (Io) of a specimen of a waste flow of the abrasive material slurry at the end of polishing to be the end of CMP polishing.

摘要翻译： 一种检测布置成进行CMP抛光的抛光终点的方法，通过该CMP抛光将包含形成有金属的坡莫合金层的基板的晶片的绝缘层和形成在含金属的坡莫合金层上的绝缘层化学机械抛光到 露出平坡莫合金层，检测抛光终点的方法，具有以下步骤：从开始或CMP抛光期间将研磨材料浆料收集在用于抛光的表面板上作为连续流动; 连续地将彩色显影剂与收集的连续流混合以制备用于连续流动的样本; 通过颜色识别传感器读取样本的颜色作为数字值（Ii）; 以及确定数字值（Ii）到达研磨结束时的研磨材料浆料的废液的样品的数字值（Io）为CMP抛光结束的时刻。