公开(公告)号：US6137123A

公开(公告)日：2000-10-24

申请号：US376114

申请日：1999-08-17

Applicant: Wei Yang ,  Thomas E. Nohava ,  Scott A. McPherson ,  Robert C. Torreano ,  Holly A. Marsh ,  Subash Krishnankutty

Inventor： Wei Yang ,  Thomas E. Nohava ,  Scott A. McPherson ,  Robert C. Torreano ,  Holly A. Marsh ,  Subash Krishnankutty

IPC: H01L31/0304 ,  H01L31/11 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC classification number: H01L31/03046 ,  H01L31/1105 ,  Y02E10/544

Abstract: A GaN/AlGaN heterojunction bipolar phototransistor having AlGaN contact, i-GaN absorbing, p-GaN base and n-GaN emitter layers formed, in that order, on a UV transparent substrate. The phototransistor has a gain greater than 10.sup.5. From 360 nm to 400 nm, eight orders of magnitude drop in responsivity was achieved. The phototransistor features a rapid electrical quenching of persistent photoconductivity, and exhibits high dark impedance and no DC drift. By changing the frequency of the quenching cycles, the detection speed of the phototransistor can be adjusted to accommodate specific applications. These results represent an internal gain UV detector with significantly improved performance over GaN based photo conductors.

Abstract translation: 具有AlGaN接触的GaN / AlGaN异质结双极光电晶体管，依次形成在UV透明基板上的i-GaN吸收，p-GaN基和n-GaN发射极层。 光电晶体管具有大于105的增益。从360nm到400nm，达到8个数量级的响应度下降。 光电晶体管具有持续光电导率的快速电淬灭，并且表现出高的暗阻抗和无直流漂移。 通过改变淬火循环的频率，可以调整光电晶体管的检测速度以适应特定应用。 这些结果代表内部增益紫外检测器，其性能明显优于基于GaN的光导体。

公开(公告)号：US5295395A

公开(公告)日：1994-03-22

申请号：US652148

申请日：1991-02-07

Applicant: G. Benjamin Hocker ,  David W. Burns ,  Akintunde I. Akinwande ,  Robert D. Horning ,  Amir R. Mirza ,  Thomas G. Stratton ,  Deidrich J. Saathoff ,  James K. Carney ,  Scott A. McPherson

Inventor： G. Benjamin Hocker ,  David W. Burns ,  Akintunde I. Akinwande ,  Robert D. Horning ,  Amir R. Mirza ,  Thomas G. Stratton ,  Deidrich J. Saathoff ,  James K. Carney ,  Scott A. McPherson

IPC: G01L9/04 ,  B81C1/00 ,  G01L9/00 ,  G01L9/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L29/84 ,  G01L13/02

CPC classification number: B81C1/00182 ,  G01L9/0042 ,  G01L9/0073 ,  H01L21/2007 ,  B81B2201/0292 ,  B81B2203/0127

Abstract: The formation of diaphragms by silicon wafer bonding provides for a structure having at least two such diaphragms with cavities in the wafers to which the diaphragm layer is bonded. Passageways through the wafers provide for communication of a fluid to the diaphragms. In some locations less than all of a plurality of diaphragms may be bonded to only one wafter having a cavity adjacent the diaphragm.

Abstract translation: 通过硅晶片接合形成隔膜提供了具有至少两个这样的隔膜的结构，其中隔膜层与晶片层结合在晶片上。 通过晶片的通道提供流体到膜片的连通。 在一些位置中，少于所有多个隔膜的位置可以仅结合到具有与隔膜相邻的空腔的一个凹部。

公开(公告)号：US06483130B1

公开(公告)日：2002-11-19

申请号：US09275632

申请日：1999-03-24

Applicant: Wei X. Yang ,  Thomas E. Nohava ,  Scott A. McPherson ,  Robert C. Torreano ,  Subash Krishnankutty ,  Holly A. Marsh

Inventor： Wei X. Yang ,  Thomas E. Nohava ,  Scott A. McPherson ,  Robert C. Torreano ,  Subash Krishnankutty ,  Holly A. Marsh

IPC: H01L310304

CPC classification number: H01L31/03046 ,  H01L31/03042 ,  H01L31/105 ,  H01L31/1852 ,  Y02E10/544

Abstract: A p-i-n photodiode having a high responsivity and quantum efficiency due to an AlGaN heterojunction where photons are absorbed within the p-n junction thereby eliminating carrier losses due to surface recombination and diffusion processes. Ultraviolet light comes through a transparent substrate, such as sapphire, a transparent AlN buffer and an n-doped AlGaN layer, and to an undoped AlGaN layer where the light is absorbed. The undoped layer is sandwiched between the n-doped AlGaN layer and a p-doped AlGaN layer. Metal contacts are formed on the doped layers to obtain the current caused by the absorbed light in the undoped layer. The mole fractions of the Al and Ga in the undoped and doped layers may be adjusted to obtain a desired wavelength bandpass of light to be detected.

Abstract translation: 由于AlGaN异质结而具有高的响应性和量子效率的p-i-n光电二极管，其中光子在p-n结内被吸收，从而消除由于表面复合和扩散过程引起的载流子损失。 紫外光通过透明基板，例如蓝宝石，透明AlN缓冲层和n掺杂的AlGaN层，以及吸收光的未掺杂的AlGaN层。 未掺杂层夹在n掺杂AlGaN层和p掺杂AlGaN层之间。 在掺杂层上形成金属接触以获得由未掺杂层中的吸收光引起的电流。 可以调节未掺杂和掺杂层中的Al和Ga的摩尔分数，以获得要检测的光的期望波长带通。

公开(公告)号：US5923953A

公开(公告)日：1999-07-13

申请号：US789036

申请日：1997-01-27

Applicant: Barbara Goldenberg Barany ,  Scott A. McPherson ,  Scott T. Reimer ,  Robert P. Ulmer ,  J. David Zook ,  Maurice L. Hitchell, deceased

Inventor： Barbara Goldenberg Barany ,  Scott A. McPherson ,  Scott T. Reimer ,  Robert P. Ulmer ,  J. David Zook ,  Maurice L. Hitchell, deceased

IPC: H01L31/0248 ,  H01L31/0264 ,  H01L31/0304 ,  H01L31/09 ,  H01L21/02

CPC classification number: H01L31/03042 ,  H01L31/09 ,  Y02E10/544 ,  Y02P70/521

Abstract: A process for forming a UV sensitive gallium nitride layer includes a step of depositing a layer of aluminum nitride on which the gallium nitride layer is deposited. Two tests, sheet resistance and photoluminescent response of the gallium nitride layer, allow one to determine that a particular gallium nitride layer produced by the process will have the required response to UV radiation. Either a careful calibration which determines a required length of the aluminum nitride deposition time, or the introduction of silicon into the gallium nitride layer during its deposition, has been found to result in deposit of a gallium nitride layer which has superior UV sensing characteristics.

Abstract translation: 形成UV敏感氮化镓层的方法包括沉积氮化镓层的氮化铝层的步骤。 氮化镓层的两个测试，薄层电阻和光致发光响应允许确定由该工艺产生的特定氮化镓层将具有对UV辐射的所需响应。 已经发现，确定所需的氮化铝沉积时间长度或者在其沉积期间将氮引入氮化镓层中的仔细校准导致沉积具有优异的UV感测特性的氮化镓层。

公开(公告)号：US5683594A

公开(公告)日：1997-11-04

申请号：US217044

申请日：1994-03-24

Applicant: G. Benjamin Hocker ,  David W. Burns ,  Akintunde I. Akinwande ,  Robert D. Horning ,  Amir R. Mirza ,  Thomas G. Stratton ,  Deidrich J. Saathoff ,  James K. Carney ,  Scott A. McPherson

Inventor： G. Benjamin Hocker ,  David W. Burns ,  Akintunde I. Akinwande ,  Robert D. Horning ,  Amir R. Mirza ,  Thomas G. Stratton ,  Deidrich J. Saathoff ,  James K. Carney ,  Scott A. McPherson

IPC: G01L9/04 ,  B81C1/00 ,  G01L9/00 ,  G01L9/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L29/84 ,  B32B31/00

CPC classification number: B81C1/00182 ,  G01L9/0042 ,  G01L9/0073 ,  H01L21/2007 ,  B81B2201/0292 ,  B81B2203/0127

Abstract: This patent relates to the fabrication of diaphragm-based microstructures used primarily for sensing physical phenomena by detecting a change in deflection, resonance, or curvature of the diaphragm. The methods of fabrication described and claimed herein relate primarily to diaphragm-based diaphragms made of silicon, either single crystal or polycrystalline in form, although other materials may be used.

Abstract translation: 该专利涉及通过检测隔膜的偏转，共振或曲率的变化来主要用于感测物理现象的基于隔膜的微结构的制造。 本文所述和要求保护的制造方法主要涉及由硅制成的隔膜式隔膜，其形式为单晶或多晶，尽管可以使用其他材料。