Resonant microbeam temperature sensor
    4.
    发明授权
    Resonant microbeam temperature sensor 失效
    共振微束温度传感器

    公开(公告)号:US5772322A

    公开(公告)日:1998-06-30

    申请号:US656501

    申请日:1996-05-31

    IPC分类号: G01K5/62 G01K7/32 G01K11/26

    CPC分类号: G01K5/62 G01K11/26 G01K7/32

    摘要: A temperature sensing device employs a resonant polysilicon beam, in combination with electrical circuitry for oscillating the beam at its natural resonant frequency, to sense changes in temperature. The resonant beam is formed as part of a silicon layer, and the silicon layer is in direct contact with a dissimilar material. In one version of the device, the silicon layer is deposited onto a sapphire substrate by low pressure chemical vapor deposition. In another version, the beam is part of a polysilicon layer deposited onto a silicon wafer substrate. The silicon substrate is thinned, then thermoelectrically bonded to a borosilicate glass substrate. In still another version, the silicon substrate is selectively thinned and has deposited thereon a TCE mismatched material. In all versions, temperature is sensed based on a thermal mismatch of the two dissimilar materials. The respective layers expand (and contract) at different rates in response to temperature changes, altering the level of induced axial strain in the resonant beam. The change in induced strain alters the frequency at which the beam oscillates, thereby providing a direct indication of temperature.

    摘要翻译: 温度感测装置采用谐振多晶硅束,与用于在其固有共振频率下振荡光束的电路组合以感测温度变化。 谐振光束形成为硅层的一部分,并且硅层与异种材料直接接触。 在该器件的一个版本中,通过低压化学气相沉积将硅层沉积到蓝宝石衬底上。 在另一个版本中,光束是沉积在硅晶片衬底上的多晶硅层的一部分。 硅衬底变薄,然后热电接合到硼硅酸盐玻璃衬底上。 在另一个版本中,硅衬底被选择性地变薄并且在其上沉积有TCE不匹配的材料。 在所有版本中,基于两种不同材料的热失配来感测温度。 相应的层响应于温度变化以不同的速率膨胀(和收缩),改变谐振梁中诱导的轴向应变的水平。 感应应变的变化会改变光束振荡的频率,从而提供温度的直接指示。

    Transducers coated with anechoic material for use in down hole communications
    5.
    发明授权
    Transducers coated with anechoic material for use in down hole communications 失效
    涂有消声材料的传感器用于井下通信

    公开(公告)号:US07061830B2

    公开(公告)日:2006-06-13

    申请号:US10299509

    申请日:2002-11-19

    IPC分类号: G01V1/40

    CPC分类号: E21B47/14

    摘要: A communication device is located within a well and includes a transducer that converts a first electrical signal into a first acoustic signal for transmission through the well and that converts second acoustic signal received from the well to a second electrical signal. The transducer is at least partially coated with an anechoic material in order to reduce the effects of acoustic signal impairments, such as echoes, flow and machine noise, and reverberations. The anechoic material has a thickness that is a fraction of a wavelength of the acoustic signals.

    摘要翻译: 通信设备位于井内,并且包括换能器,其将第一电信号转换为第一声信号以通过井传输,并将从井接收的第二声信号转换为第二电信号。 传感器至少部分地涂覆有消声材料,以便减少声信号损伤的影响,例如回波,流量和机器噪声以及混响。 消声材料的厚度是声信号波长的一部分。

    Microelectromechanical device with integrated conductive shield
    6.
    发明授权
    Microelectromechanical device with integrated conductive shield 失效
    具有集成导电屏蔽的微机电装置

    公开(公告)号:US06952042B2

    公开(公告)日:2005-10-04

    申请号:US10172865

    申请日:2002-06-17

    CPC分类号: G01L9/0042 G01L19/0627

    摘要: A microelectromechanical device and method of fabricating the same, including a layer of patterned and deposited metal or mechanical-quality, doped polysilicon inserted between the appropriate device element layers, which provides a conductive layer to prevent the microelectromechanical device's output from drifting. The conductive layer may encapsulate of the device's sensing or active elements, or may selectively cover only certain of the device's elements. Further, coupling the metal or mechanical-quality, doped polysilicon to the same voltage source as the device's substrate contact may place the conductive layer at the voltage of the substrate, which may function as a Faraday shield, attracting undesired, migrating ions from interfering with the output of the device.

    摘要翻译: 一种微机电装置及其制造方法,其包括插入在适当的器件元件层之间的图案化和沉积的金属或机械质量的掺杂多晶硅层,其提供导电层以防止微机电装置的输出漂移。 导电层可以封装器件的感测或有源元件,或者可以选择性地仅覆盖器件的某些元件。 此外,将金属或机械质量的掺杂多晶硅耦合到与器件的衬底接触相同的电压源可将导电层置于衬底的电压下,其可用作法拉第屏蔽,吸引不期望的迁移离子干扰 设备的输出。

    Transducer packaging assembly for use in sensing unit subjected to high G forces
    7.
    发明授权
    Transducer packaging assembly for use in sensing unit subjected to high G forces 失效
    用于传感器的传感器包装组件受到高G力的影响

    公开(公告)号:US06570485B1

    公开(公告)日:2003-05-27

    申请号:US09715480

    申请日:2000-11-17

    IPC分类号: H01L610

    摘要: A transducer packaging assembly for use in a sensing unit subjected to high forces of acceleration includes a base having a cavity. A pressure sensitive semiconductor die is bonded to a large backplate having a shape so that it nestles into the cavity but is spaced from a surface of the cavity. A planar cover secured to the base has a hole larger than the die but smaller than the backplate, and thin wires extend from the die to electrical connections on the assembly. A viscous fluid fills a space between the backplate and the cavity, and a space between the backplate and the cover, and transmits a pressure to be measured to the pressure sensitive die. The viscous fluid has a sufficiently high viscosity to oppose movement of the backplate relative to the cavity while cushioning the pressure sensitive die and the backplate from forces of acceleration.

    摘要翻译: 用于受到高加速力的感测单元中的换能器包装组件包括具有空腔的底座。 压敏半导体管芯结合到具有形状的大型背板,使得其与空腔的表面相隔开,但是与空腔的表面间隔开。 固定到基座的平面盖具有比模具更大的孔,但小于背板,细线从模具延伸到组件上的电连接。 粘性流体填充背板和空腔之间的空间,以及背板和盖之间的空间,并将待测量的压力传递到压敏模具。 粘性流体具有足够高的粘度以抵抗背板相对于空腔的移动,同时缓冲压敏模具和背板而不受加速力的影响。

    Method and system of providing power to a pressure and temperature sensing element

    公开(公告)号:US07284438B2

    公开(公告)日:2007-10-23

    申请号:US11272306

    申请日:2005-11-10

    IPC分类号: G01L9/00

    摘要: A method and system of providing power to a pressure and temperature sensing element is provided. Polarity switching is added to a current source for a sensor, which includes one piezo-resistive sensing element configured as a single implant square located at an edge of a diaphragm of the element, and which produces pressure and temperature outputs. The piezo-sensing element operates as a piezo-resistive radial element when current is conducted through the element radially with respect to the diaphragm. Conversely, the piezo-sensing element operates as a piezo-resistive tangential element when current is conducted through the element tangentially to the edge of the diaphragm. A difference in the radial and tangential resistances is proportional to an applied pressure, while a sum of the resistances is a function of temperature. By alternating the polarity of power applied to the sensor, a build up of ions resulting from PUD is minimized.