Planar-waveguide Bragg gratings in curved waveguides
    2.
    发明授权
    Planar-waveguide Bragg gratings in curved waveguides 有权
    曲面波导中的平面波导布拉格光栅

    公开(公告)号:US08731350B1

    公开(公告)日:2014-05-20

    申请号:US13609294

    申请日:2012-09-11

    CPC classification number: G02B6/124 G02B6/12007 G02B6/136

    Abstract: A method for forming planar-waveguide Bragg grating in a curved waveguide comprises: forming a long chirped planar-waveguide Bragg grating in an Archimedes' spiral such that a long length of the waveguide can fit in a small chip area where the grating is formed in the curved waveguide; using periodic width modulation to form the planar-waveguide Bragg grating on the curved waveguide, and where the formation of the periodic width modulation occurs during the etching of the waveguide core; using rectangular width modulation to create Bragg gratings with a higher order than 1st order to allow a larger grating period and larger modulation depth, using waveguide width tapering while keeping the width modulation period constant to introduce chirp to the planar-waveguide Bragg grating where the index of refraction is a function of waveguide width, by applying a specific width tapering to create a desired arbitrary chirp profile.

    Abstract translation: 用于在弯曲波导中形成平面波导布拉格光栅的方法包括:在阿基米德螺旋形成长啁啾平面波导布拉格光栅,使得波长的长度可以装配在形成光栅的小芯片区域中 弯曲波导; 使用周期宽度调制以在弯曲波导上形成平面波导布拉格光栅,并且其中在波导芯的蚀刻期间发生周期性宽度调制的形成; 使用矩形宽度调制产生具有比1级更高阶的布拉格光栅,以允许更大的光栅周期和更大的调制深度,使用波导宽度逐渐减小,同时保持宽度调制周期恒定,以将啁啾引入平面波导布拉格光栅,其中指数 的折射是波导宽度的函数,通过应用特定的宽度逐渐变细以产生期望的任意啁啾曲线。

    Metal nanoparticle photonic bandgap device in SOI method
    5.
    发明授权
    Metal nanoparticle photonic bandgap device in SOI method 有权
    SOI方法中的金属纳米粒子光子带隙器件

    公开(公告)号:US07459324B1

    公开(公告)日:2008-12-02

    申请号:US11844192

    申请日:2007-08-23

    CPC classification number: G02B6/1225 B82Y20/00 G02B2006/12061 Y10S977/773

    Abstract: A Metal Nanoparticle Photonic Bandgap Device in SOI Method (NC#098884). The method includes providing a substrate having a semiconductor layer over an insulator layer, operatively coupling the substrate to a photonic bandgap structure having at least one period, wherein the photonic bandgap structure is adapted to receive and output light along a predetermined path, and operatively coupling the photonic bandgap structure and the substrate to a metal nanoparticle structure comprising at least three metal nanoparticles having spherical shapes of different radii, wherein the at least three metal nanoparticles are adapted to receive and amplify light rays and output amplified light.

    Abstract translation: SOI方法中的金属纳米粒子光子带隙器件(NC#098884)。 该方法包括提供在绝缘体层上方具有半导体层的衬底,可操作地将衬底耦合到具有至少一个周期的光子带隙结构,其中光子带隙结构适于沿着预定路径接收和输出光,以及可操作耦合 所述光子带隙结构和所述衬底至金属纳米颗粒结构,其包括具有不同半径的球形形状的至少三种金属纳米颗粒,其中所述至少三种金属纳米颗粒适于接收和放大光线并输出放大的光。

    Electronic/photonic bandgap device
    7.
    发明授权
    Electronic/photonic bandgap device 有权
    电子/光子带隙装置

    公开(公告)号:US07305168B1

    公开(公告)日:2007-12-04

    申请号:US11729595

    申请日:2007-03-29

    CPC classification number: G02B6/1225 B82Y20/00 G02B6/12007 G02B6/43

    Abstract: A Electronic/Photonic Bandgap Device (NC#98614). The apparatus includes a substrate; an electronics layer operatively coupled to the substrate; and an optical bus layer operatively coupled to the electronics layer. The optical bus layer comprises at least one 3D photonic bandgap structure having at least one period operatively coupled to the electronics layer and comprising a plurality of honeycomb-like structures having a plurality of high index regions and a plurality of low index regions, wherein the plurality of honeycomb-like structures comprises at least four honeycomb-like structures layered over each other, wherein a second honeycomb-like structure is offset from a first honeycomb-like structure, wherein a third honeycomb-like structure is offset from a second honeycomb-like structure, and wherein a fourth honeycomb-like structure is not offset from the first honeycomb-like structure. The 3D photonic bandgap structure and the electronics layer are monolithically integrated over the substrate.

    Abstract translation: 电子/光子带隙装置(NC#98614)。 该装置包括基板; 可操作地耦合到所述衬底的电子层; 以及可操作地耦合到电子层的光学总线层。 光学总线层包括至少一个3D光子带隙结构,其具有可操作地耦合到电子层的至少一个周期,并且包括具有多个高折射率区域和多个低折射率区域的多个蜂窝状结构,其中多个 蜂窝状结构体包括彼此层叠的至少四个蜂窝状结构,其中第二蜂窝状结构偏离第一蜂窝状结构,其中第三蜂窝状结构偏离第二蜂窝状结构 结构,并且其中第四蜂窝状结构不从第一蜂窝状结构偏移。 3D光子带隙结构和电子层在衬底上单片集成。

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