利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

18 条记录 (耗时 0.02 秒)

    Cleaning solution for immersion photolithography system and immersion photolithograph process using the cleaning solution
    3.
    发明申请
    Cleaning solution for immersion photolithography system and immersion photolithograph process using the cleaning solution 审中-公开
    用于浸没光刻系统的清洁溶液和使用清洁溶液的浸渍光刻工艺

    公开(公告)号：US20090117499A1

    公开(公告)日：2009-05-07

    申请号：US12232594

    申请日：2008-09-19

    申请人： Se-yeon Kim ,  Yong-kyun Ko ,  Sang-mi Lee ,  Yang-koo Lee ,  Hun-jung Yi ,  Kun-tack Lee

    发明人： Se-yeon Kim ,  Yong-kyun Ko ,  Sang-mi Lee ,  Yang-koo Lee ,  Hun-jung Yi ,  Kun-tack Lee

    IPC分类号： G03F7/20 ,  C11D3/20

    CPC分类号： G03F7/70925 ,  G03F7/70341

    摘要： A cleaning solution for an immersion photolithography system according to example embodiments may include an ether-based solvent, an alcohol-based solvent, and a semi-aqueous-based solvent. In the immersion photolithography system, a plurality of wafers coated with photoresist films may be exposed pursuant to an immersion photolithography process using an immersion fluid. The area contacted by the immersion fluid during the exposure process may accumulate contaminants. Accordingly, the area contacted by the immersion fluid during the exposure process may be washed with the cleaning solution according to example embodiments so as to reduce or prevent defects in the immersion photolithography system.

    摘要翻译： 根据示例性实施方式的用于浸没式光刻系统的清洁溶液可以包括醚类溶剂，醇类溶剂和半水性溶剂。 在浸没式光刻系统中，可以使用浸没流体根据浸没光刻工艺来曝光涂覆有光致抗蚀剂膜的多个晶片。 在曝光过程中浸入液接触的区域可能会积聚污染物。 因此，可以利用根据示例性实施例的清洗溶液洗涤曝光过程中浸入液接触的区域，以便减少或防止浸没光刻系统中的缺陷。

    Methods Of Cleaning And Plasma Processing Apparatus For Manufacturing Semiconductors
    6.
    发明申请
    Methods Of Cleaning And Plasma Processing Apparatus For Manufacturing Semiconductors 审中-公开
    清洁等离子体处理装置制造半导体的方法

    公开(公告)号：US20120006351A1

    公开(公告)日：2012-01-12

    申请号：US13176868

    申请日：2011-07-06

    申请人： Hyun-Su Jun ,  Hun-Jung Yi ,  Sang-jean Jeon ,  Se-Yeon Kim ,  In-Joong Kim

    发明人： Hyun-Su Jun ,  Hun-Jung Yi ,  Sang-jean Jeon ,  Se-Yeon Kim ,  In-Joong Kim

    IPC分类号： B08B7/00

    CPC分类号： H01J37/32862

    摘要： A cleaning method for cleaning a semiconductor manufacturing apparatus may include generating plasma from a cleaning gas. The semiconductor manufacturing apparatus may be cleaned with the plasma. A positive direct-current voltage may be applied to an ESC of the semiconductor manufacturing apparatus during a cleaning of the semiconductor manufacturing apparatus. A negative direct-current voltage may be applied to the ESC during the cleaning of the semiconductor manufacturing apparatus. Also, a wall of the process chamber may be cleaned by applying the positive direct-current voltage to the ESC.

    摘要翻译： 用于清洁半导体制造装置的清洁方法可以包括从清洁气体产生等离子体。 可以用等离子体清洁半导体制造装置。 在半导体制造装置的清洁期间，可以向半导体制造装置的ESC施加正的直流电压。 在清洁半导体制造装置期间，可以向ESC施加负的直流电压。 此外，可以通过将正的直流电压施加到ESC来清洁处理室的壁。

    METHOD FOR MANUFACTURING SUSTAINED RELEASE MICROSPHERE BY SOLVENT FLOW EVAPORATION METHOD
    7.
    发明申请
    METHOD FOR MANUFACTURING SUSTAINED RELEASE MICROSPHERE BY SOLVENT FLOW EVAPORATION METHOD 审中-公开
    通过溶剂流动蒸发方法制造持续释放微球的方法

    公开(公告)号：US20110200679A1

    公开(公告)日：2011-08-18

    申请号：US13061389

    申请日：2009-08-28

    申请人： Nak Hyun Lim ,  Sung Geun Kim ,  Se Yeon Kim ,  Hyung Joon Jung ,  Kyung Hoi Cha

    发明人： Nak Hyun Lim ,  Sung Geun Kim ,  Se Yeon Kim ,  Hyung Joon Jung ,  Kyung Hoi Cha

    IPC分类号： A61K9/14 ,  A61K38/09 ,  A61P5/24

    CPC分类号： A61K9/1647 ,  A61K9/1694

    摘要： The present invention relates to a method for preparing a sustained-release microsphere which can control the long-term release of a drug. More particularly, as the preparation of a microsphere in which a drug is loaded in a carrier comprising a biodegradable polymer, the present invention relates to a method for preparing a sustained-release microsphere wherein a solvent intra-exchange evaporation method by means of co-solvent is used for suppressing the initial burst release of physiologically active substance, to release the physiologically active substance in the body continuously and uniformly.

    摘要翻译： 本发明涉及可以控制药物长期释放的缓释微球的制备方法。 更具体地，作为其中将药物负载在包含可生物降解的聚合物的载体中的微球的制备，本发明涉及一种制备缓释微球的方法，其中通过共 - 溶剂用于抑制生理活性物质的初始爆发释放，以连续均匀地释放身体中的生理活性物质。

    Plasma monitoring device using a cylindrical hollow electrode
    9.
    发明授权
    Plasma monitoring device using a cylindrical hollow electrode 有权
    使用圆柱形空心电极的等离子体监测装置

    公开(公告)号：US08767203B2

    公开(公告)日：2014-07-01

    申请号：US13217699

    申请日：2011-08-25

    申请人： Se-Yeon Kim ,  Hun Jung Yi ,  Sangpyoung Jeon ,  Hyojin Yun

    发明人： Se-Yeon Kim ,  Hun Jung Yi ,  Sangpyoung Jeon ,  Hyojin Yun

    IPC分类号： G01J3/30

    CPC分类号： H05H1/0031 ,  H05H1/2406 ,  H05H2001/2431

    摘要： A plasma generating unit for a process monitoring device includes a hollow first electrode extending in a length direction and a second electrode extending in the length direction and positioned within and displaced from the first electrode with a distance therebetween. The first electrode has an inner diameter and the second electrode has an outer diameter selected to vary the distance between the electrodes in the length direction so that the plasma generating unit generates a plasma by ionizing a gas flowing between the electrodes at a different position in the length direction based on a pressure of the gas.

    摘要翻译： 一种用于过程监测装置的等离子体产生装置包括沿长度方向延伸的中空第一电极和沿长度方向延伸的第二电极，并且位于第一电极内并且与第一电极相距一定距离。 所述第一电极具有内径，并且所述第二电极具有选择的外径以改变所述电极之间的长度方向上的距离，使得所述等离子体产生单元通过在所述电极中的不同位置处电离在所述电极之间流动的气体来产生等离子体 基于气体的压力的长度方向。