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    Graphene electronic devices
    3.
    发明授权
    Graphene electronic devices 有权
    石墨烯电子设备

    公开(公告)号：US09093509B2

    公开(公告)日：2015-07-28

    申请号：US13242177

    申请日：2011-09-23

    申请人： Jin-seong Heo ,  Sun-ae Seo ,  Sung-hoon Lee ,  Hyun-jong Chung ,  Hee-jun Yang

    发明人： Jin-seong Heo ,  Sun-ae Seo ,  Sung-hoon Lee ,  Hyun-jong Chung ,  Hee-jun Yang

    IPC分类号： H01L29/06 ,  H01L29/778 ,  H01L29/16

    CPC分类号： H01L29/778 ,  H01L29/0657 ,  H01L29/1606

    摘要： A graphene electronic device includes a gate electrode, a gate oxide disposed on the gate electrode, a graphene channel layer formed on the gate oxide, and a source electrode and a drain electrode respectively disposed on both ends of the graphene channel layer. In the graphene channel layer, a plurality of nanoholes are arranged in a single line in a width direction of the graphene channel layer.

    摘要翻译： 石墨烯电子器件包括栅电极，设置在栅电极上的栅极氧化物，形成在栅极氧化物上的石墨烯沟道层，以及分别设置在石墨烯沟道层两端的源电极和漏电极。 在石墨烯通道层中，多个纳米孔在石墨烯通道层的宽度方向上以单一线排列。

    Graphene electronic device and method of fabricating the same
    4.
    发明授权
    Graphene electronic device and method of fabricating the same 失效
    石墨烯电子器件及其制造方法

    公开(公告)号：US08421131B2

    公开(公告)日：2013-04-16

    申请号：US12929817

    申请日：2011-02-17

    申请人： Hyun-jong Chung ,  Seung-jae Baek ,  Sun-ae Seo ,  Yun-sung Woo ,  Jin-seong Heo ,  David Seo

    发明人： Hyun-jong Chung ,  Seung-jae Baek ,  Sun-ae Seo ,  Yun-sung Woo ,  Jin-seong Heo ,  David Seo

    IPC分类号： H01L29/78

    CPC分类号： H01L29/66045 ,  H01L23/522 ,  H01L27/0688 ,  H01L27/124 ,  H01L29/1606 ,  H01L29/45 ,  H01L29/7781 ,  H01L29/78684 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A graphene electronic device may include a silicon substrate, connecting lines on the silicon substrate, a first electrode and a second electrode on the silicon substrate, and an interlayer dielectric on the silicon substrate. The interlayer dielectric may be configured to cover the connecting lines and the first and second electrodes and the interlayer dielectric may be further configured to expose at least a portion of the first and second electrodes. The graphene electronic device may further include an insulating layer on the interlayer dielectric and a graphene layer on the insulating layer, the graphene layer having a first end and a second end. The first end of the graphene layer may be connected to the first electrode and the second end of the graphene layer may be connected to the second electrode.

    摘要翻译： 石墨烯电子器件可以包括硅衬底，硅衬底上的连接线，硅衬底上的第一电极和第二电极，以及硅衬底上的层间电介质。 层间电介质可以被配置为覆盖连接线，并且第一和第二电极和层间电介质可以被进一步配置为暴露第一和第二电极的至少一部分。 所述石墨烯电子器件还可以包括在所述层间电介质上的绝缘层和所述绝缘层上的石墨烯层，所述石墨烯层具有第一端和第二端。 石墨烯层的第一端可以连接到第一电极，并且石墨烯层的第二端可以连接到第二电极。

    INVERTER LOGIC DEVICES INCLUDING GRAPHENE FIELD EFFECT TRANSISTOR HAVING TUNABLE BARRIER
    5.
    发明申请
    INVERTER LOGIC DEVICES INCLUDING GRAPHENE FIELD EFFECT TRANSISTOR HAVING TUNABLE BARRIER 有权
    逆变器逻辑器件，包括具有可控阻挡层的石墨场效应晶体管

    公开(公告)号：US20130048948A1

    公开(公告)日：2013-02-28

    申请号：US13593708

    申请日：2012-08-24

    申请人： Jin-seong HEO ,  Seong-jun PARK ,  Hyun-jong CHUNG ,  Hyun-jae SONG ,  Hee-jun YANG ,  David SEO

    发明人： Jin-seong HEO ,  Seong-jun PARK ,  Hyun-jong CHUNG ,  Hyun-jae SONG ,  Hee-jun YANG ,  David SEO

    IPC分类号： H01L29/78 ,  B82Y99/00

    CPC分类号： H01L29/1606 ,  B82Y10/00 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/66045 ,  H01L29/78684

    摘要： Inverter logic devices include a gate oxide on a back substrate, a first graphene layer and a second graphene layer separated from each other on the gate oxide, a first electrode layer and a first semiconductor layer separated from each other on the first graphene layer, a second electrode layer and a second semiconductor layer separated from each other on the second graphene layer, and an output electrode on the first and second semiconductor layers and configured to output an output signal. The first semiconductor layer is doped with a different type of impurities selected from n-type impurities and p-type impurities than the second semiconductor layer.

    摘要翻译： 逆变器逻辑器件包括背面衬底上的栅极氧化物，在栅极氧化物上彼此分离的第一石墨烯层和第二石墨烯层，在第一石墨烯层上彼此分离的第一电极层和第一半导体层， 第二电极层和在第二石墨烯层上彼此分离的第二半导体层，以及在第一和第二半导体层上的输出电极，并且被配置为输出输出信号。 第一半导体层掺杂有比第二半导体层选自n型杂质和p型杂质的不同类型的杂质。

    Magneto-resistive devices, information storage devices including the same and methods of operating information storage devices
    6.
    发明申请
    Magneto-resistive devices, information storage devices including the same and methods of operating information storage devices 有权
    磁阻设备，包括其的信息存储设备和操作信息存储设备的方法

    公开(公告)号：US20110085258A1

    公开(公告)日：2011-04-14

    申请号：US12801712

    申请日：2010-06-22

    申请人： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

    发明人： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

    IPC分类号： G11B27/36 ,  G11B5/127

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L43/08

    摘要： An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.

    摘要翻译： 信息存储装置包括磁道和磁畴壁移动单元。 磁道在每对相邻磁畴之间具有多个磁畴和磁畴壁。 磁畴壁移动单元构造成至少移动磁畴壁。 信息存储装置还包括被配置为读取记录在磁道上的信息的磁阻装置。 磁阻装置包括钉扎层，自由层和布置在其间的分离层。 被钉扎层具有固定的磁化方向。 自由层设置在被钉扎层和磁迹之间，并且具有与被钉扎层的磁化方向不平行的易磁化轴。

    Information storage device with domain wall moving unit and magneto-resistive device magnetization arrangement
    9.
    发明授权
    Information storage device with domain wall moving unit and magneto-resistive device magnetization arrangement 有权
    具有域壁移动单元和磁阻装置磁化布置的信息存储装置

    公开(公告)号：US08537506B2

    公开(公告)日：2013-09-17

    申请号：US12801712

    申请日：2010-06-22

    申请人： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

    发明人： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

    IPC分类号： G11B5/39

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L43/08

    摘要： An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.

    摘要翻译： 信息存储装置包括磁道和磁畴壁移动单元。 磁道在每对相邻磁畴之间具有多个磁畴和磁畴壁。 磁畴壁移动单元构造成至少移动磁畴壁。 信息存储装置还包括被配置为读取记录在磁道上的信息的磁阻装置。 磁阻装置包括钉扎层，自由层和布置在其间的分离层。 被钉扎层具有固定的磁化方向。 自由层设置在被钉扎层和磁迹之间，并且具有与被钉扎层的磁化方向不平行的易磁化轴。