公开(公告)号：US08169148B2

公开(公告)日：2012-05-01

申请号：US12149450

申请日：2008-05-01

申请人： Sang Jean Jeon ,  Yuri Tolmachev ,  Su Ho Lee ,  Seoung Hyun Seok ,  Young Min Park ,  Won Hyuk Jang

发明人： Sang Jean Jeon ,  Yuri Tolmachev ,  Su Ho Lee ,  Seoung Hyun Seok ,  Young Min Park ,  Won Hyuk Jang

IPC分类号： H01J7/24

CPC分类号： H01J37/32165 ,  H01J37/321

摘要： A plasma generating apparatus having superior plasma generation efficiency that uses a single reaction chamber. The plasma generating apparatus includes a RF generator for providing a RF power, an antenna for generating an electromagnetic field upon receiving the RF power, a reaction chamber for exciting/ionizing a reaction gas via the electromagnetic field, and generating a plasma, and a plasma channel for absorbing the RF power, and allowing a current signal to be induced to the plasma.

摘要翻译： 一种等离子体发生装置，其具有使用单个反应室的优异的等离子体产生效率。 等离子体发生装置包括：RF发生器，用于提供RF功率;天线，用于在接收到RF功率时产生电磁场;反应室，用于经由电磁场激发/电离反应气体，产生等离子体;以及等离子体 通道，用于吸收RF功率，并允许电流信号被感应到等离子体。

公开(公告)号：US20090015165A1

公开(公告)日：2009-01-15

申请号：US12149450

申请日：2008-05-01

申请人： Sang Jean Jeon ,  Yuri Tolmachev ,  Su Ho Lee ,  Seoung Hyun Seok ,  Young Min Park ,  Won Hyuk Jang

发明人： Sang Jean Jeon ,  Yuri Tolmachev ,  Su Ho Lee ,  Seoung Hyun Seok ,  Young Min Park ,  Won Hyuk Jang

IPC分类号： H01J7/24

CPC分类号： H01J37/32165 ,  H01J37/321

摘要： A plasma generating apparatus having superior plasma generation efficiency that uses a single reaction chamber. The plasma generating apparatus includes a RF generator for providing a RF power, an antenna for generating an electromagnetic field upon receiving the RF power, a reaction chamber for exciting/ionizing a reaction gas via the electromagnetic field, and generating a plasma, and a plasma channel for absorbing the RF power, and allowing a current signal to be induced to the plasma.

摘要翻译： 一种等离子体发生装置，其具有使用单个反应室的优异的等离子体产生效率。 等离子体发生装置包括：RF发生器，用于提供RF功率;天线，用于在接收到RF功率时产生电磁场;反应室，用于经由电磁场激发/电离反应气体，产生等离子体;以及等离子体 通道，用于吸收RF功率，并允许电流信号被感应到等离子体。

公开(公告)号：US20100009097A1

公开(公告)日：2010-01-14

申请号：US12389921

申请日：2009-02-20

申请人： Doug-Yong Sung ,  Moon-Hyeong Han ,  Andrey Ushakov ,  Hyu-Rim Park ,  Nam-Young Cho ,  Tae-Yong Kwon ,  Seoung-Hyun Seok ,  Dong-Woo Kang ,  Chang-Yun Lee ,  Dong-Ha Lee

发明人： Doug-Yong Sung ,  Moon-Hyeong Han ,  Andrey Ushakov ,  Hyu-Rim Park ,  Nam-Young Cho ,  Tae-Yong Kwon ,  Seoung-Hyun Seok ,  Dong-Woo Kang ,  Chang-Yun Lee ,  Dong-Ha Lee

IPC分类号： C23C16/513

CPC分类号： C23C16/515 ,  C23C16/505 ,  H01J37/32091

摘要： A deposition apparatus includes a gas inflow tube, a plasma electrode, a substrate support functioning as an opposite electrode to the plasma electrode and mounting a substrate thereon, a plasma connector terminal connected to the plasma electrode, a first voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a continuous mode, and a second voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a pulse mode. The voltage applied by the first voltage application unit is an RF voltage of about 13.56 MHz, and the voltage applied by the second voltage application unit is a VHF voltage ranged from about 27 MHz to about 100 MHz.

摘要翻译： 沉积装置包括气体流入管，等离子体电极，用作等离子体电极的相对电极并在其上安装基板的基板支撑件，连接到等离子体电极的等离子体连接器端子，连接到等离子体的第一电压施加单元 连接端子以连续模式施加电压;以及第二电压施加单元，连接到等离子体连接器端子，以脉冲模式施加电压。 由第一电压施加单元施加的电压是约13.56MHz的RF电压，并且由第二电压施加单元施加的电压是从约27MHz至约100MHz的VHF电压。