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6 条记录 (耗时 0.014 秒)

    ATOMIC LAYER DEPOSITION APPARATUS
    1.
    发明申请
    ATOMIC LAYER DEPOSITION APPARATUS 有权
    原子层沉积装置

    公开(公告)号：US20090191717A1

    公开(公告)日：2009-07-30

    申请号：US12356999

    申请日：2009-01-21

    申请人： Ki-Hyun KIM ,  Ki-Vin IM ,  Hoon-Sang CHOI ,  Moon-Hyeong HAN

    发明人： Ki-Hyun KIM ,  Ki-Vin IM ,  Hoon-Sang CHOI ,  Moon-Hyeong HAN

    IPC分类号： H01L21/30 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/30

    CPC分类号： H01L21/30 ,  C23C16/45546 ,  C23C16/45551 ,  C23C16/45578

    摘要： An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas.

    摘要翻译： 原子层沉积装置和原子层沉积方法提高了生产率。 原子层沉积装置包括反应室，用于在反应室内以给定间隔支撑多个半导体衬底并加热多个半导体衬底的加热器和分别位于反应室内并对应于多个半导体衬底的多个注射器 由加热器支撑的多个半导体基板。 多个喷射器分别扫过多个半导体基板上方喷射反应气体。

    Semiconductor substrate processing apparatus, method, and medium
    3.
    发明申请
    Semiconductor substrate processing apparatus, method, and medium 审中-公开
    半导体衬底处理装置，方法和介质

    公开(公告)号：US20070277931A1

    公开(公告)日：2007-12-06

    申请号：US11727182

    申请日：2007-03-23

    申请人： Myoung Woon Kim ,  Moon Hyeong Han

    发明人： Myoung Woon Kim ,  Moon Hyeong Han

    IPC分类号： C23F1/00 ,  H01L21/306

    CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32183

    摘要： A semiconductor substrate processing apparatus can supply RF powers having the same frequency to upper and lower electrodes serving to generate different degrees of uniformity, and control a power ratio of the RF powers, thereby enhancing a processing uniformity of a semiconductor substrate. The apparatus includes a vacuum chamber to receive a semiconductor substrate, upper and lower electrodes disposed within the vacuum chamber, RF power suppliers to supply RF powers having the same frequency to the upper and lower electrodes, and a controller to control a power ratio of the RF powers supplied from the RF power suppliers to the upper and lower electrodes.

    摘要翻译： 半导体基板处理装置可以向上下电极提供具有相同频率的RF功率，以产生不同的均匀度，并且控制RF功率的功率比，从而提高半导体基板的处理均匀性。 该装置包括：接收半导体衬底的真空室，设置在真空室内的上电极和下电极; RF电源供应器，向上电极和下电极提供具有相同频率的RF功率;以及控制器， 从RF电源提供的RF功率到上电极和下电极。

    Apparatus for HDP-CVD and method of forming insulating layer using the same
    4.
    发明申请
    Apparatus for HDP-CVD and method of forming insulating layer using the same 审中-公开
    HDP-CVD装置及使用其形成绝缘层的方法

    公开(公告)号：US20090064932A1

    公开(公告)日：2009-03-12

    申请号：US12219443

    申请日：2008-07-22

    申请人： Ki Hyun Kim ,  Doug Yong Sung ,  Moon Hyeong Han

    发明人： Ki Hyun Kim ,  Doug Yong Sung ,  Moon Hyeong Han

    IPC分类号： C23C16/22 ,  C23C16/52

    CPC分类号： C23C16/402 ,  C23C16/45561 ,  C23C16/52

    摘要： Disclosed herein are an apparatus for high-density plasma chemical vapor deposition and a method of forming an insulating layer using the same. The use of the apparatus and method enables efficient formation of the insulating layer in the gap between semiconductor devices with a high aspect ratio by dispersing a total demand amount of gas in the formation process.The high-density plasma chemical vapor deposition apparatus includes a plurality of gas suppliers to supply a gas into a chamber and to form an insulating layer between semiconductor devices, each of the gas suppliers including a gas injection valve to perform an on/off operation and a valve controller to control the on/off operation of the gas injection valve and to disperse a total demand amount of the gas.

    摘要翻译： 本文公开了一种用于高密度等离子体化学气相沉积的装置和使用其形成绝缘层的方法。 使用该装置和方法能够通过在形成过程中分散总需求量的气体而在高纵横比的半导体器件之间的间隙中有效地形成绝缘层。 高密度等离子体化学气相沉积设备包括多个气体供应商，以将气体供应到室中并在半导体器件之间形成绝缘层，每个气体供应器包括用于执行开/关操作的气体喷射阀， 阀控制器，用于控制气体喷射阀的开/关操作并分散气体的总需求量。

    System for making semiconductor devices and processing control thereof
    6.
    发明申请
    System for making semiconductor devices and processing control thereof 审中-公开
    制造半导体器件的系统及其处理控制

    公开(公告)号：US20050027481A1

    公开(公告)日：2005-02-03

    申请号：US10823610

    申请日：2004-04-14

    申请人： Hee-jeon Yang ,  Moon-hyeong Han ,  Hae-yong Jung

    发明人： Hee-jeon Yang ,  Moon-hyeong Han ,  Hae-yong Jung

    IPC分类号： H01L21/02 ,  G06F11/30 ,  H01L21/66

    CPC分类号： H01L22/20

    摘要： A process control method managing a semiconductor device manufacturing process, including an operation of a system with a plurality of sub-modules, including diagnosing an operational state of the plurality of sub-modules prior to beginning the semiconductor device manufacturing process, checking a process condition of the system, and informing operational states of the sub-modules and the process condition of the system to a user. With this configuration, a system for making semiconductor devices and processing control thereof prevents a malfunction of the semiconductor device manufacturing system according to a diagnosis of the semiconductor device manufacturing system prior to starting a semiconductor manufacturing process, thereby increasing yield in manufacturing semiconductor devices.

    摘要翻译： 一种管理半导体器件制造工艺的处理控制方法，包括具有多个子模块的系统的操作，包括在开始半导体器件制造过程之前诊断多个子模块的操作状态，检查处理条件 的系统，并向用户通知操作状态子系统和系统的处理状况。 利用这种结构，半导体器件制造系统及其处理控制在开始半导体制造工艺之前根据半导体器件制造系统的诊断来防止半导体器件制造系统的故障，从而提高制造半导体器件的成品率。