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    Electric nanodevice and method of manufacturing same
    6.
    发明授权
    Electric nanodevice and method of manufacturing same 有权
    电子纳米器件及其制造方法

    公开(公告)号：US08563380B2

    公开(公告)日：2013-10-22

    申请号：US12811710

    申请日：2009-01-07

    申请人： Shachar Richter ,  Elad Mentovich ,  Itshak Kalifa

    发明人： Shachar Richter ,  Elad Mentovich ,  Itshak Kalifa

    IPC分类号： H01L21/336

    CPC分类号： H01L51/057 ,  B82Y10/00 ,  H01L51/0093

    摘要： A nanodevice is disclosed. The nanodevice comprises: a drain region, a source region opposite to the drain region and being separated therefrom at least with a trench, and a gate region, isolated from the drain and the source regions and from the trench. The trench has a height which is between 1 nm and 30 nm.

    摘要翻译： 公开了一种纳米器件。 纳米器件包括：漏极区域，与漏极区域相反并且至少与沟槽分离的源极区域以及从漏极和源极区域以及与沟槽隔离的栅极区域。 沟槽的高度在1nm和30nm之间。

    MOLECULAR ELECTRONIC DEVICES AND METHODS OF FABRICATING SAME
    9.
    发明申请
    MOLECULAR ELECTRONIC DEVICES AND METHODS OF FABRICATING SAME 审中-公开
    分子电子器件及其制造方法

    公开(公告)号：US20100051909A1

    公开(公告)日：2010-03-04

    申请号：US12305011

    申请日：2007-06-19

    申请人： Shachar Richter ,  Ariel Caster ,  Elad Mentovich

    发明人： Shachar Richter ,  Ariel Caster ,  Elad Mentovich

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： H01L27/281 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L51/0051 ,  H01L51/0078 ,  H01L51/0093 ,  H01L2251/5369

    摘要： Substrates carrying many molecular devices and circuits made of at least two devices are described. The substrates have less than 50% shorted molecular devices; and molecular circuits comprise a first molecular device and a second molecular device. The first molecular device has at least one self assembled monolayer (SAM) of a first type sandwiched between a first bottom electrode and a first top electrode. Similarly, the second molecular device has at least one SAM of a second type sandwiched between a second bottom electrode and a second top electrode. The first top electrode is electrically connected to the second bottom electrode. In exemplary embodiment, the first and second types of SAM are mutually different.

    摘要翻译： 描述了承载由至少两个装置制成的许多分子装置和电路的基板。 底物具有小于50％的短路分子装置; 并且分子电路包括第一分子装置和第二分子装置。 第一分子器件具有夹在第一底部电极和第一顶部电极之间的至少一个第一类型的自组装单层（SAM）。 类似地，第二分子装置具有夹在第二底部电极和第二顶部电极之间的至少一个第二类型的SAM。 第一顶部电极电连接到第二底部电极。 在示例性实施例中，第一和第二类型的SAM是相互不同的。