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公开(公告)号：US08036449B2
公开(公告)日：2011-10-11
申请号：US12056519
申请日：2008-03-27
IPC分类号： G06K9/00
CPC分类号： G06K9/00201 , G06T7/593
摘要： A method for performing a convergence calculation using a projective transformation between images captured by two cameras to observe a flat part of an object in the images, wherein a computational load is reduced while securing a convergence property of the convergence calculation. Initial values (n0(i), d0(i)) are set to values satisfying a limiting condition that should be satisfied by the initial values (n0(i), d0(i)), where the limiting condition is that a plane πa(i) defined by the initial values (n0(i), d0(i)) of given types of parameters (n(i), d(i)) of a projective transformation matrix in the convergence calculation is inclined with respect to an actual plane including the flat part of the object to be observed.
摘要翻译： 一种用于使用由两个摄像机捕获的图像之间的投影变换进行收敛计算的方法，以观察图像中的对象的平坦部分，其中减小了计算负荷，同时确保了会聚计算的收敛特性。 初始值（n0（i），d0（i））被设定为满足由初始值（n0（i），d0（i））满足的限制条件的值，其中限制条件是平面＆pgr 由收敛计算中的投影变换矩阵的给定类型的参数（n（i），d（i））的初始值（n0（i），d0（i））定义的a（i）相对于 包括被观察物体的平坦部分的实际平面。
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公开(公告)号：US08019145B2
公开(公告)日：2011-09-13
申请号：US12056502
申请日：2008-03-27
IPC分类号： G06K5/00
CPC分类号： B62D57/032 , G05D1/0246 , G05D2201/0217 , G06K9/00201 , G06T7/70
摘要： A robot capable of performing appropriate movement control while reducing arithmetic processing for recognizing the shape of a floor. The robot sets a predetermined landing position of steps of the legs on a present assumed floor, which is a floor represented by floor shape information used for a current motion control of the robot, during movement of the robot. An image projection area is set, and is projected on each image captured by cameras mounted on the robot for each predetermined landing position in the vicinity of each of the predetermined landing positions. Shape parameters representing the shape of an actual floor partial area are estimated, forming an actual floor whose image is captured in each partial image area, based on the image of the partial image area generated by projecting the set image projection area on the images captured by the cameras for each partial image area.
摘要翻译： 能够进行适当的移动控制的机器人，同时减少用于识别地板的形状的运算处理。 机器人在机器人运动期间，将当前假想地板上的腿的步骤的预定着陆位置设置为当前假想地板，其是由用于机器人的当前运动控制的楼板形状信息表示的楼层。 设置图像投影区域，并且在每个预定着陆位置附近的每个预定着陆位置处投影到安装在机器人上的照相机拍摄的每个图像上。 基于通过将设置的图像投影区域投影到由图像捕获的图像生成的部分图像区域的图像，估计表示实际楼层部分区域的形状的形状参数，形成其图像被捕获在每个部分图像区域中的实际楼层 每个部分图像区域的相机。
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公开(公告)号：US20110175998A1
公开(公告)日：2011-07-21
申请号：US13007309
申请日：2011-01-14
CPC分类号： G06T7/2033 , G06K9/00798 , G06T7/246 , G06T2207/20164 , G06T2207/30244
摘要： A motion calculation device includes an image-capturing unit configured to capture an image of a range including a plane and outputs the captured image, an extraction unit configured to extract a region of the plane from the image, a detection unit configured to detect feature points and motion vectors of the feature points from a plurality of images captured by the image-capturing unit at a predetermined time interval; and a calculation unit configured to calculate the motion of the host device based on both of an epipolar constraint relating to the feature points and a homography relating to the region.
摘要翻译： 运动计算装置包括拍摄单元，被配置为捕获包括平面的范围的图像并输出所述拍摄图像;提取单元，被配置为从所述图像提取所述平面的区域;检测单元，被配置为检测特征点 以及以预定时间间隔从由所述图像捕获单元捕获的多个图像的所述特征点的运动矢量; 以及计算单元，被配置为基于与特征点相关的对极约束和与该区域相关的单应性来计算主机设备的运动。
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公开(公告)号：US20080310706A1
公开(公告)日：2008-12-18
申请号：US12056519
申请日：2008-03-27
IPC分类号： G06K9/00
CPC分类号： G06K9/00201 , G06T7/593
摘要： A method for performing a convergence calculation using a projective transformation between images captured by two cameras to observe a flat part of an object in the images, wherein a computational load is reduced while securing a convergence property of the convergence calculation. Initial values (n0(i), d0(i)) are set to values satisfying a limiting condition that should be satisfied by the initial values (n0(i), d0(i)), where the limiting condition is that a plane πa(i) defined by the initial values (n0(i), d0(i)) of given types of parameters (n(i), d(i)) of a projective transformation matrix in the convergence calculation is inclined with respect to an actual plane including the flat part of the object to be observed.
摘要翻译： 一种用于使用由两个摄像机捕获的图像之间的投影变换进行收敛计算的方法，以观察图像中的对象的平坦部分，其中减小了计算负荷，同时确保了会聚计算的收敛特性。 初始值（n0（i），d0（i））被设置为满足初始值（n0（i），d0（i））应满足的限制条件的值，其中限制条件是平面pia （i）由收敛计算中的投影变换矩阵的给定类型的参数（n（i），d（i））的初始值（n0（i），d0（i））定义为相对于 实际平面包括被观察物体的平坦部分。
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公开(公告)号：US06969884B2
公开(公告)日：2005-11-29
申请号：US10728928
申请日：2003-12-08
IPC分类号： H01L21/00 , H01L21/28 , H01L21/331 , H01L21/82 , H01L21/8222 , H01L21/8247 , H01L27/115 , H01L29/76 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.
摘要翻译： 公开了一种半导体器件，包括半导体衬底，该半导体衬底包括由隔离沟槽分隔开的第一和第二元件形成区域，形成在第一和第二元件形成区域上的第一和第二下部栅极绝缘膜，形成在第一和第二元件形成区域上的第一和第二浮置栅极 和第二下栅极绝缘膜，隔离绝缘膜，至少形成在所述隔离沟槽中，并且在其上表面上形成有凹部，形成在所述第一和第二浮栅上的上栅极绝缘膜，以及控制栅极线， 与第一和第二浮动栅极相对的相对部分，其中上部栅极绝缘膜被插入，并且位于凹部内部的部分，第一浮动栅极包括与第二浮动栅极相对的侧表面，并且与包括的侧表面完全对准 在第一元件形成区域中并由隔离沟槽限定。
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6.发明授权Semiconductor design/fabrication system, semiconductor design/fabrication method and semiconductor design/fabrication program 有权半导体设计/制造系统，半导体设计/制造方法和半导体设计/制造程序公开(公告)号：US06775816B2
公开(公告)日：2004-08-10
申请号：US10327114
申请日：2002-12-24
申请人： Yoshiyuki Sato , Shigeki Sugimoto , Tatsuo Akiyama
发明人： Yoshiyuki Sato , Shigeki Sugimoto , Tatsuo Akiyama
IPC分类号： G06F1750
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor design/fabrication system which combines a plurality of function blocks and arranges the combined function blocks on a chip, comprising: a function block selector which selects the function blocks to be arranged on the same chip from a plurality of function blocks for each of which a critical area indicating a range where defective products occur due to existence of defects is known; a chip information calculator which calculates a sum of the critical areas on each of the selected function blocks; an yield calculator which calculates an yield based on a calculation result of the chip information calculator and defect occurrence rate information of a chip fabrication line; a cost delivery time information calculator which calculates information relating to fabrication cost and delivery time of the chip based on a calculation result of the yield calculator and fabrication management information relating to cost and fabrication period of the chip fabrication line; and a combination selector which selects a combination of the function blocks constituting the chip based on the information relating to the fabrication cost and the delivery time of the chip calculated by the cost delivery time information calculator.
摘要翻译： 一种组合多个功能块并将组合功能块布置在芯片上的半导体设计/制造系统，包括：功能块选择器，从多个功能块中选择要布置在同一芯片上的功能块， 这是一个关键区域，表明由于存在缺陷而出现缺陷产品的范围; 芯片信息计算器，其计算每个所选择的功能块上的关键区域的总和; 收益率计算器，其基于芯片信息计算器的计算结果和芯片制造线的缺陷发生率信息来计算收益; 成本交付时间信息计算器，其基于收益计算器的计算结果和与芯片制造线的成本和制造周期相关的制造管理信息来计算与芯片的制造成本和交付时间有关的信息; 以及组合选择器，其基于与由成本递送时间信息计算器计算的芯片的制造成本和输送时间有关的信息来选择构成芯片的功能块的组合。
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公开(公告)号：US06190955B1
公开(公告)日：2001-02-20
申请号：US09014433
申请日：1998-01-27
申请人： Matthias Ilg , Richard L. Kleinhenz , Soichi Nadahara , Ronald W. Nunes , Klaus Penner , Klaus Roithner , Radhika Srinivasan , Shigeki Sugimoto
发明人： Matthias Ilg , Richard L. Kleinhenz , Soichi Nadahara , Ronald W. Nunes , Klaus Penner , Klaus Roithner , Radhika Srinivasan , Shigeki Sugimoto
IPC分类号： H01L218244
CPC分类号： H01L21/3081
摘要： Improved trench forming methods for semiconductor substrates using BSG avoid the problems associated with conventional TEOS hard mask techniques. The methods comprise: (a) providing a semiconductor substrate, (b) applying a conformal layer of borosilicate glass (BSG) on the substrate; (c) forming a patterned photoresist layer over the BSG layer whereby a portion of a layer underlying the photoresist layer is exposed, (d) anisotropically etching through the exposed portion of the underlying layer, through any other layers lying between the photoresist layer and the semiconductor substrate, and into the semiconductor substrate, thereby forming a trench in the semiconductor substrate. Preferably, one or more dielectric layers are present on the substrate surface prior to application of the BSG layer. One or more chemical barrier and/or organic antireflective coating layers may be applied over the BSG layer between the BSG layer and the photoresist layer. The methods are especially useful for forming deep trenches in silicon substrates with pad dielectric layers.
摘要翻译： 使用BSG的半导体衬底的改进的沟槽形成方法避免了与常规TEOS硬掩模技术相关的问题。 所述方法包括：（a）提供半导体衬底，（b）在衬底上施加保形层硼硅酸盐玻璃（BSG）;（c）在BSG层上形成图案化的光刻胶层，由此在光刻胶下面的一部分层 （d）通过位于光致抗蚀剂层和半导体衬底之间的任何其它层，通过底层的暴露部分进行各向异性蚀刻，并进入半导体衬底，由此在半导体衬底中形成沟槽。优选地，一个 或更多的介电层在施加BSG层之前存在于衬底表面上。 可以在BSG层和光致抗蚀剂层之间的BSG层上施加一个或多个化学屏障和/或有机抗反射涂层。 该方法对于在具有焊盘电介质层的硅衬底中形成深沟槽特别有用。
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公开(公告)号：US07214580B2
公开(公告)日：2007-05-08
申请号：US11000173
申请日：2004-12-01
IPC分类号： H01L21/8238
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.
摘要翻译： 公开了一种半导体器件，包括半导体衬底，该半导体衬底包括由隔离沟槽分隔开的第一和第二元件形成区域，形成在第一和第二元件形成区域上的第一和第二下部栅极绝缘膜，形成在第一和第二元件形成区域上的第一和第二浮置栅极 和第二下栅极绝缘膜，隔离绝缘膜，至少形成在所述隔离沟槽中，并且在其上表面上形成有凹部，形成在所述第一和第二浮栅上的上栅极绝缘膜，以及控制栅极线， 与第一和第二浮动栅极相对的相对部分，其中上部栅极绝缘膜被插入，并且位于凹部内部的部分，第一浮动栅极包括与第二浮动栅极相对的侧表面，并且与包括的侧表面完全对准 在第一元件形成区域中并由隔离沟槽限定。
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公开(公告)号：US5356834A
公开(公告)日：1994-10-18
申请号：US35656
申请日：1993-03-23
申请人： Shigeki Sugimoto , Katsuya Okumura
发明人： Shigeki Sugimoto , Katsuya Okumura
IPC分类号： H01L21/60 , H01L21/768 , H01L21/8242 , H01L21/441
CPC分类号： H01L27/10852 , H01L21/76804 , H01L21/76831 , H01L21/76897 , Y10S148/133
摘要： A manufacturing method of semiconductor devices according to this invention, comprises the step of forming pattern portions containing internal wiring layers on a semiconductor substrate, the step of forming interlayer insulating films on said semiconductor substrate, the step of forming an opening portion in said interlayer insulating films so as to allow the pattern portions and the substrate to appear, and the step of forming a sidewall insulating film on the sidewall of the pattern portions appearing in the opening portion.
摘要翻译： 根据本发明的半导体器件的制造方法包括在半导体衬底上形成包含内部布线层的图案部分的步骤，在所述半导体衬底上形成层间绝缘膜的步骤，在所述层间绝缘体中形成开口部分的步骤 以使图形部分和基板出现，以及在出现在开口部分的图案部分的侧壁上形成侧壁绝缘膜的步骤。
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公开(公告)号：US20120060752A1
公开(公告)日：2012-03-15
申请号：US13049456
申请日：2011-03-16
CPC分类号： H01L21/67109 , H01L21/67742 , H01L21/68707
摘要： An apparatus for forming silicon oxide film is disclosed. The apparatus includes a spin coating unit, a carrying unit, and an oxidation unit. The spin coating unit forms a polymer film above a substrate by spin coating a solution including a polymer containing a silazane bond dissolved in an organic solvent. The carrying unit carries the substrate to the oxidation unit without contacting the polymer film. The oxidation unit, when receiving the substrate from the carrying unit, converts the polymer film into the silicon oxide film by either immersing the polymer film with a heated aqueous solution containing hydrogen peroxide, spraying the heated aqueous solution containing hydrogen peroxide over the polymer film, or exposing the polymer film to a reaction gas containing a hydrogen peroxide vapor. The apparatus, by itself, completes the polymer film formation and the polymer-to-silicon oxide film conversion within the apparatus itself.
摘要翻译： 公开了一种用于形成氧化硅膜的设备。 该设备包括旋涂单元，承载单元和氧化单元。 旋涂单元通过旋涂包含溶解在有机溶剂中的含有硅氮烷键的聚合物的溶液在基底上形成聚合物膜。 承载单元将基板运送到氧化单元而不与聚合物膜接触。 氧化单元在从承载单元接收基板时，通过将聚合物膜浸入含有过氧化氢的加热水溶液中，将聚合物膜转化为氧化硅膜，将加热的含有过氧化氢的水溶液喷洒在聚合物膜上， 或将聚合物膜暴露于含有过氧化氢蒸气的反应气体中。 该装置本身完成了聚合物膜的形成和在设备本身内的聚合物 - 氧化硅膜的转换。
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