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    Plasma processing apparatus
    2.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号：US06503364B1

    公开(公告)日：2003-01-07

    申请号：US09651720

    申请日：2000-08-30

    申请人： Toshio Masuda ,  Tatehito Usui ,  Shigeru Shirayone ,  Kazue Takahashi ,  Mitsuru Suehiro

    发明人： Toshio Masuda ,  Tatehito Usui ,  Shigeru Shirayone ,  Kazue Takahashi ,  Mitsuru Suehiro

    IPC分类号： C23C1600

    CPC分类号： H01J37/32935 ,  H01J37/32009 ,  H01J37/32972

    摘要： In the plasma processing apparatus for generating plasma in a processing chamber and processing a wafer by mutual action of electromagnetic waves radiated from a UHF band antenna installed in the processing chamber and a magnetic field formed by a magnetic field generator installed around the processing chamber, a hollow tube having one end in communication with an opening in the side wall of the processing chamber and another end, outside the processing chamber, which has a measuring window of plasma optical emission. By setting the lines of force of the magnetic field formed by the magnetic field generator so as to form an angle relative to the hollow tube, entry of plasma into the hollow tube can be prevented, and adhesion of deposits onto the measuring window can be suppressed, whereby the transmission factor of the measuring window can be kept constant over a long period of use.

    摘要翻译： 在处理室中产生等离子体的等离子体处理装置中，通过从安装在处理室中的UHF带状天线辐射的电磁波的相互作用和由设置在处理室周围的磁场发生部形成的磁场进行相互作用来处理晶片， 中空管具有与处理室的侧壁中的开口连通的一端，以及具有等离子体光发射测量窗的处理室外的另一端。 通过设置由磁场发生器形成的磁场的力线以相对于中空管形成一个角度，可以防止等离子体进入中空管，并且可以抑制沉积物粘附到测量窗口上 由此，可以在长时间使用时测量窗口的透射系数保持恒定。

    Vacuum processing apparatus and vacuum processing method of sample
    3.
    发明申请
    Vacuum processing apparatus and vacuum processing method of sample 审中-公开
    真空加工设备和真空加工方法的样品

    公开(公告)号：US20060237391A1

    公开(公告)日：2006-10-26

    申请号：US11213736

    申请日：2005-08-30

    申请人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Tadamitsu Kanekiyo ,  Shigeru Shirayone ,  Hideki Kihara

    发明人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Tadamitsu Kanekiyo ,  Shigeru Shirayone ,  Hideki Kihara

    IPC分类号： B44C1/22 ,  H01L21/306 ,  H01L21/461 ,  C23F1/00

    CPC分类号： H01L21/31116 ,  C23F4/00 ,  H01J37/32192 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/31144 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76831

    摘要： Provided is a vacuum processing apparatus or processing method which, when films of a plurality of layers are etched into a predetermined shape, eliminates a deficiency in shape formed by sample processing, increases the aspect ratio of the processed shape, and provides a more precise shape. The vacuum processing apparatus of the present invention comprises a vacuum container the inside of which can be depressurized and a sample holder located inside of the vacuum container to place thereon a sample to be processed; is used for etching, into a predetermined shape, films of a plurality of layers laid over the sample surface with plasma formed using an electric field and a processing gas fed in a space above the sample holder inside of the vacuum container; and is equipped with a heat conducting gas feed means for feeding a heat conducting gas between a sample mounting surface and the backside of the sample, wherein the apparatus is equipped further with a heat-conducting-gas pressure control function for changing stepwise the pressure of the heat conducting gas fed between the sample mounting surface and the backside of the sample in accordance with the progress of the processing of the films of a plurality of layers of the sample.

    摘要翻译： 提供一种真空处理装置或处理方法，当多层的膜被蚀刻成预定形状时，消除由样品处理形成的形状不足，增加加工形状的纵横比，并提供更精确的形状 。 本发明的真空处理装置包括一个其内部可被减压的真空容器和一个位于真空容器内部的样品架，放置在待处理样品上; 用于将采用电场形成的等离子体放置在样品表面上的多层的薄膜和在真空容器内的样品架上方的空间内供给的处理气体进行蚀刻，形成预定的形状; 并且配备有用于在样品安装表面和样品的背面之间供给导热气体的导热气体供给装置，其中该装置还具有用于逐步改变样品的压力的导热气体压力控制功能 导热气体根据样品的多个层的膜的处理进程而在样品安装表面和样品的背面之间供给。

    Method for processing plasma processing apparatus
    4.
    发明申请
    Method for processing plasma processing apparatus 审中-公开
    等离子体处理装置的处理方法

    公开(公告)号：US20050072444A1

    公开(公告)日：2005-04-07

    申请号：US10791856

    申请日：2004-03-04

    申请人： Shigeru Shirayone ,  Tetsuo Ono ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Takahiro Abe ,  Takahiro Shimomura ,  Hiroyuki Kitsunai

    发明人： Shigeru Shirayone ,  Tetsuo Ono ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Takahiro Abe ,  Takahiro Shimomura ,  Hiroyuki Kitsunai

    IPC分类号： B08B7/00 ,  H01L21/3213 ,  B08B3/12

    CPC分类号： H01J37/32082 ,  B08B7/0035 ,  H01J2237/334 ,  H01L21/32136

    摘要： A method for processing a plasma processing apparatus having plasma generating means 3, 8, 10, 13 through 15 for generating plasma within a processing chamber, a high-frequency power applying means 18 for applying high-frequency power to an object 17 to be processed, a processing chamber 1 to which an evacuating device 7 is connected and capable of having its interior evacuated, and a gas supply device (not shown) for the processing chamber, wherein the method comprises mounting a Si wafer 17 on an electrode 4 for holding the object to be processed, introducing hydrobromic gas and chlorine gas into the processing chamber and generating plasma, and removing the aluminum-based deposit adhered to the interior of the processing chamber.

    摘要翻译： 一种用于处理具有用于在处理室内产生等离子体的等离子体产生装置3,8,10,13至15的等离子体处理装置的方法，用于向要处理的物体17施加高频电力的高频电力施加装置18 ，排气装置7连接并能够将其内部抽真空的处理室1和用于处理室的气体供给装置（未示出），其中该方法包括将Si晶片17安装在用于保持的电极4上 要处理的物体，将氢溴酸气体和氯气引入处理室并产生等离子体，以及去除附着在处理室内部的铝基沉积物。

    Plasma processing system and plasma processing method
    5.
    发明授权
    Plasma processing system and plasma processing method 失效
    等离子体处理系统和等离子体处理方法

    公开(公告)号：US06245190B1

    公开(公告)日：2001-06-12

    申请号：US09048075

    申请日：1998-03-26

    申请人： Toshio Masuda ,  Katsuhiko Mitani ,  Tetsunori Kaji ,  Jun'ichi Tanaka ,  Katsuya Watanabe ,  Shigeru Shirayone ,  Toru Otsubo ,  Ichiro Sasaki ,  Hideshi Fukumoto ,  Makoto Koizumi

    发明人： Toshio Masuda ,  Katsuhiko Mitani ,  Tetsunori Kaji ,  Jun'ichi Tanaka ,  Katsuya Watanabe ,  Shigeru Shirayone ,  Toru Otsubo ,  Ichiro Sasaki ,  Hideshi Fukumoto ,  Makoto Koizumi

    IPC分类号： H05H146

    CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/32678

    摘要： A plasma processing apparatus and a method therefor which can achieve a preferred process rate, a fine pattern process capability, a selectivity and uniformity of processing at the same time compatibly for a large size wafer, which effects are achieved by controlling the plasma state and the dissociation state of etching gas through control of the electron resonance through application of a magnetic field thereto. A high frequency power at 20-300 MHz is applied across a pair of electrodes in a vacuum process chamber, and a magnetic field is formed parallel to the plane of the electrodes in the space between the electrodes. By controlling the intensity of the magnetic field in a range of 100 gauss or smaller, formation of electron cyclotron resonance and electron sheath resonance occurring from interaction between the electrical field and the magnetic field in the electrode sheath portion is controlled. Thereby, the plasma state, i.e., the electron density, electron energy distribution and dissociation state of the process gas in the plasma, can be controlled. The magnetic field is generated by a plurality of coils, an outer shield, and pendant yoke to form magnetic field parallel to the plane of the electrodes in the space between the upper and the bottom electrodes.

    摘要翻译： 一种等离子体处理装置及其方法，其能够通过控制等离子体状态和等离子体状态来实现对于大尺寸晶片同时实现优选的处理速率，精细图案处理能力，同时处理的选择性和均匀性， 通过对其施加磁场来控制电子共振来蚀刻气体的解离状态。 在真空处理室中的一对电极上施加20-300MHz的高频功率，并且在电极之间的空间中形成平行于电极平面的磁场。 通过控制100高斯或更小范围内的磁场的强度，控制由电场鞘部分中的电场和磁场之间的相互作用产生的电子回旋共振和电子鞘共振的形成。 由此，可以控制等离子体状态，即等离子体中的处理气体的电子密度，电子能量分布和解离状态。 磁场由多个线圈，外屏蔽和悬挂磁轭产生，以在上电极和下电极之间的空间中形成平行于电极平面的磁场。

    PLASMA PROCESSING APPARATUS
    7.
    发明申请
    PLASMA PROCESSING APPARATUS 审中-公开
    等离子体加工设备

    公开(公告)号：US20100193130A1

    公开(公告)日：2010-08-05

    申请号：US12393272

    申请日：2009-02-26

    申请人： Masatoshi KAWAKAMI ,  Tooru ARAMAKI ,  Shigeru SHIRAYONE ,  Kenetsu YOKOGAWA ,  Takumi TANDOU

    发明人： Masatoshi KAWAKAMI ,  Tooru ARAMAKI ,  Shigeru SHIRAYONE ,  Kenetsu YOKOGAWA ,  Takumi TANDOU

    IPC分类号： H01L21/306

    CPC分类号： H01L21/67109 ,  H01L21/6831

    摘要： In a plasma processing apparatus including a vacuum chamber, a sample table for mounting a member to be processed thereon, the sample table having a coolant path to control a temperature of the member to be processed, an electrostatic chuck power supply for electrostatically adsorbing the member to be processed on the sample table, and a plurality of gas hole parts provided in the sample table to supply heat transfer gas between the member to be processed and the sample table and thereby control a temperature of the member to be processed, each of the gas hole parts includes a boss formed of a dielectric, a sleeve, and a plurality of small tubes, and the small tubes are arranged in a range of 10 to 50% of a radius when measured from a center of the gas hole part toward outside.

    摘要翻译： 在包括真空室的等离子体处理装置中，用于安装待处理部件的样品台，具有用于控制待处理部件的温度的冷却剂通道的样品台，用于静电吸附该部件的静电卡盘电源 在样品台上加工的多个气孔部分和设置在样品台中的多个气孔部分，以在待处理部件和样品台之间提供传热气体，从而控制待处理部件的温度， 气孔部分包括由电介质，套管和多个小管形成的凸起，并且当从气孔部分的中心朝向外部测量时，小管被布置在半径的10至50％的范围内 。