公开(公告)号：US08796845B2

公开(公告)日：2014-08-05

申请号：US13286494

申请日：2011-11-01

申请人： Yoko Kanemoto ,  Akira Sato ,  Shogo Inaba

发明人： Yoko Kanemoto ,  Akira Sato ,  Shogo Inaba

IPC分类号： H01L23/02 ,  H01L23/06 ,  H01L23/04

CPC分类号： B81C1/00333 ,  B81C2203/0145

摘要： An electronic device according to the invention includes: a substrate; an MEMS structure formed above the substrate; and a covering structure defining a cavity in which the MEMS structure is arranged, wherein the covering structure has a first covering layer covering from above the cavity and having a through-hole in communication with the cavity and a second covering layer formed above the first covering layer and closing the through-hole, the first covering layer has a first region located above at least the MEMS structure and a second region located around the first region, the first covering layer is thinner in the first region than in the second region, and a distance between the substrate and the first covering layer in the first region is longer than a distance between the substrate and the first covering layer in the second region.

摘要翻译： 根据本发明的电子设备包括：基板; 在衬底上形成的MEMS结构; 以及限定了其中布置有MEMS结构的空腔的覆盖结构，其中所述覆盖结构具有从所述空腔上方覆盖并具有与所述空腔连通的通孔的第一覆盖层和形成在所述第一覆盖物上方的第二覆盖层 并且关闭所述通孔，所述第一覆盖层具有位于至少所述MEMS结构之上的第一区域和位于所述第一区域周围的第二区域，所述第一覆盖层在所述第一区域中比在所述第二区域中更薄，以及 第一区域中的基板和第一覆盖层之间的距离比第二区域中的基板和第一覆盖层之间的距离长。

公开(公告)号：US08592925B2

公开(公告)日：2013-11-26

申请号：US12351758

申请日：2009-01-09

申请人： Shogo Inaba

发明人： Shogo Inaba

IPC分类号： H01L29/84

CPC分类号： B81B3/007 ,  B81C2203/0163 ,  H01L2924/0002 ,  H01L2924/00

摘要： A functional device includes: a substrate; a functional structure formed on the substrate; a cavity in which the functional structure is disposed; and a cover which covers the cavity, wherein the cover includes a bumpy structure including rib shaped portions, or groove shaped portions, which cross a covering range covering at least the cavity.

摘要翻译： 功能元件包括：基板; 形成在基板上的功能结构; 其中设置有所述功能结构的空腔; 以及覆盖所述空腔的盖，其中所述盖包括包括肋形部分或凹槽形部分的颠簸结构，所述凹形结构部分交叉覆盖至少所述腔的覆盖范围。

公开(公告)号：US08395227B2

公开(公告)日：2013-03-12

申请号：US13344964

申请日：2012-01-06

申请人： Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

发明人： Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

IPC分类号： H01L29/84 ,  H01L21/00

CPC分类号： B81B3/0086 ,  B81B2201/0271

摘要： A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

摘要翻译： 微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。 井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

公开(公告)号：US08362577B2

公开(公告)日：2013-01-29

申请号：US13012099

申请日：2011-01-24

申请人： Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

发明人： Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

IPC分类号： H01L29/84

CPC分类号： H03H3/0073 ,  H03H9/1057 ,  Y10S977/721

摘要： A resonator with a microeletromechanical system structure has a transistor with a gate electrode, a capacitor with an upper and lower electrode, a substrate, a first and second structure of the microelectromechanical system structure, a first silicon layer of the first structure and the upper electrode formed above the substrate, a second silicon layer of the second structure and the gate electrode unit formed above the substrate, and an insulating film formed above the capacitor and the transistor, the insulating film having an opening for placement of the second structure.

摘要翻译： 具有微机电系统结构的谐振器具有具有栅电极的晶体管，具有上电极和下电极的电容器，基板，微机电系统结构的第一和第二结构，第一结构的第一硅层和上电极 形成在基板上方，第二结构的第二硅层和形成在基板上的栅电极单元，以及形成在电容器和晶体管上方的绝缘膜，绝缘膜具有用于放置第二结构的开口。

公开(公告)号：US20120104593A1

公开(公告)日：2012-05-03

申请号：US13286494

申请日：2011-11-01

申请人： Yoko KANEMOTO ,  Akira SATO ,  Shogo INABA

发明人： Yoko KANEMOTO ,  Akira SATO ,  Shogo INABA

IPC分类号： H01L23/06 ,  H01L21/52

CPC分类号： B81C1/00333 ,  B81C2203/0145

摘要： An electronic device according to the invention includes: a substrate; an MEMS structure formed above the substrate; and a covering structure defining a cavity in which the MEMS structure is arranged, wherein the covering structure has a first covering layer covering from above the cavity and having a through-hole in communication with the cavity and a second covering layer formed above the first covering layer and closing the through-hole, the first covering layer has a first region located above at least the MEMS structure and a second region located around the first region, the first covering layer is thinner in the first region than in the second region, and a distance between the substrate and the first covering layer in the first region is longer than a distance between the substrate and the first covering layer in the second region.

摘要翻译： 根据本发明的电子设备包括：基板; 在衬底上形成的MEMS结构; 以及限定了其中布置有MEMS结构的空腔的覆盖结构，其中所述覆盖结构具有从所述空腔上方覆盖并具有与所述空腔连通的通孔的第一覆盖层和形成在所述第一覆盖物上方的第二覆盖层 并且关闭所述通孔，所述第一覆盖层具有位于至少所述MEMS结构之上的第一区域和位于所述第一区域周围的第二区域，所述第一覆盖层在所述第一区域中比在所述第二区域中更薄，以及 第一区域中的基板和第一覆盖层之间的距离比第二区域中的基板和第一覆盖层之间的距离长。

公开(公告)号：US20120025922A1

公开(公告)日：2012-02-02

申请号：US13270868

申请日：2011-10-11

申请人： Shogo INABA ,  Akira SATO

发明人： Shogo INABA ,  Akira SATO

IPC分类号： H03B5/30

CPC分类号： H03H9/2457 ,  H03H3/0072 ,  H03H9/02433 ,  H03H2009/02511

摘要： A micro-electro-mechanical-system resonator, includes: a substrate; a fixed electrode formed on the substrate; and a movable electrode, arranged facing the fixed electrode and driven by an electrostatic attracting force or an electrostatic repulsion force that acts on a gap between the fixed electrode and the movable electrode. An internal surface of a support beam of the movable electrode facing the fixed electrode has an inclined surface.

摘要翻译： 一种微电子机械系统谐振器，包括：基板; 形成在基板上的固定电极; 以及可动电极，其布置成面对固定电极并且通过作用在固定电极和可动电极之间的间隙的静电吸引力或静电排斥力驱动。 面对固定电极的可动电极的支撑梁的内表面具有倾斜表面。

公开(公告)号：US20110303457A1

公开(公告)日：2011-12-15

申请号：US13168561

申请日：2011-06-24

申请人： Shogo INABA ,  Akira SATO

发明人： Shogo INABA ,  Akira SATO

IPC分类号： H01L23/28

CPC分类号： B81B3/0075 ,  H01L24/05 ,  H01L2224/05554 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

摘要： An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.

摘要翻译： 电子设备包括基板，形成在基板上的功能结构体和用于限定具有设置在其中的功能结构体的空腔部分的覆盖结构，其中覆盖结构设置有设置在基板上的侧壁， 围绕空腔部分的绝缘层和布线层; 覆盖所述空腔部的上部的第一覆盖层，具有穿过所述空腔部的开口，由包含耐腐蚀层的层叠结构构成的第一覆盖层; 以及用于封闭开口的第二覆盖层。

公开(公告)号：US07994594B2

公开(公告)日：2011-08-09

申请号：US12045990

申请日：2008-03-11

申请人： Shogo Inaba ,  Akira Sato

发明人： Shogo Inaba ,  Akira Sato

IPC分类号： H01L29/84

CPC分类号： B81B3/0075 ,  H01L24/05 ,  H01L2224/05554 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

摘要： An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.

摘要翻译： 电子设备包括基板，形成在基板上的功能结构体和用于限定具有设置在其中的功能结构体的空腔部分的覆盖结构，其中覆盖结构设置有设置在基板上的侧壁， 围绕空腔部分的绝缘层和布线层; 覆盖所述空腔部的上部的第一覆盖层，具有穿过所述空腔部的开口，由包含耐腐蚀层的层叠结构构成的第一覆盖层; 以及用于封闭开口的第二覆盖层。

公开(公告)号：US20110095383A1

公开(公告)日：2011-04-28

申请号：US12981747

申请日：2010-12-30

申请人： Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

发明人： Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

IPC分类号： H01L29/84

CPC分类号： B81B3/0086 ,  B81B2201/0271

摘要： A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

公开(公告)号：US20110031564A1

公开(公告)日：2011-02-10

申请号：US12907337

申请日：2010-10-19

申请人： Shogo INABA ,  Akira SATO ,  Toru WATANABE ,  Takeshi MORI

发明人： Shogo INABA ,  Akira SATO ,  Toru WATANABE ,  Takeshi MORI

IPC分类号： H01L29/84

CPC分类号： B81B3/0086

摘要： A micro electro mechanical system (MEMS) device includes: a fixed electrode made of silicon and provided above a semiconductor substrate; a movable electrode made of silicon and arranged in a mechanically movable manner by having a gap from the semiconductor substrate; and a wiring layered part that is provided around the movable electrode, covers a portion of the fixed electrode and includes wiring. One of the fixed electrode and the movable electrode is implanted with an impurity ion and at least a part of the portion of the fixed electrode covered by the wiring layered part is silicidized.

摘要翻译： 微电子机械系统（MEMS）装置包括：由硅制成并设置在半导体衬底之上的固定电极; 由硅制成的可移动电极，通过与半导体衬底有间隙以机械可移动的方式布置; 以及设置在可动电极周围的布线层叠部，覆盖固定电极的一部分并且包括布线。 固定电极和可动电极之一注入杂质离子，被布线层叠部覆盖的固定电极的部分的至少一部分被硅化。