公开(公告)号：US20080035458A1

公开(公告)日：2008-02-14

申请号：US11832038

申请日：2007-08-01

申请人： Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

发明人： Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

IPC分类号： H01H57/00 ,  H01H11/00

CPC分类号： H01H59/0009 ,  H01C10/50 ,  Y10T29/49105

摘要： A micro-electro mechanical system (MEMS) switch includes a fixed electrode formed on a substrate, and a movable electric resistor formed on the substrate, the movable electric resistor serving as an electric resistor that divides an electric potential where the MEMS switch is set to a conduction state.

摘要翻译： 微机电系统（MEMS）开关包括形成在基板上的固定电极和形成在基板上的可移动电阻器，可移动电阻器用作将MEMS开关设置为的电位分开的电阻器 导通状态。

公开(公告)号：US20100148284A1

公开(公告)日：2010-06-17

申请号：US12710773

申请日：2010-02-23

申请人： Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

发明人： Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

IPC分类号： H01L29/84

CPC分类号： B81B3/0086 ,  B81B2201/0271

摘要： A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

摘要翻译： 微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。 井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

公开(公告)号：US20110254110A1

公开(公告)日：2011-10-20

申请号：US13170628

申请日：2011-06-28

申请人： Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

发明人： Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

IPC分类号： H01L29/84

CPC分类号： B81B3/0086 ,  B81B2201/0271

摘要： A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

摘要翻译： 微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。 井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

公开(公告)号：US20080105951A1

公开(公告)日：2008-05-08

申请号：US11875383

申请日：2007-10-19

申请人： Akira SATO ,  Toru WATANABE ,  Shogo INABA ,  Takeshi MORI

发明人： Akira SATO ,  Toru WATANABE ,  Shogo INABA ,  Takeshi MORI

IPC分类号： H01L29/06 ,  H01L21/30

CPC分类号： B81C1/00246 ,  B81B2207/015 ,  B81B2207/07 ,  B81C2203/0136 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01L21/7682 ,  H01L24/05 ,  H01L2924/14 ,  H01L2924/00

摘要： An electronic device, including a substrate, a functional structure constituting a functional element formed on the substrate, and a cover structure forming a cavity portion in which the functional structure is disposed, is disclosed. In the electronic device, the cover structure includes a laminated structure of an interlayer insulating film and a wiring layer, the laminated structure being formed on the substrate in such a way that it surrounds the cavity portion, and the cover structure has an upside cover portion covering the cavity portion from above, the upside cover portion being formed with part of the wiring layer that is disposed above the functional structure.

摘要翻译： 公开了一种电子设备，包括基板，构成在基板上形成的功能元件的功能结构，以及形成其中设置有功能结构的空腔部分的盖结构。 在电子设备中，盖结构包括层间绝缘膜和布线层的叠层结构，层叠结构以包围空腔部分的方式形成在基板上，并且盖结构具有上侧盖部分 从上方覆盖空腔部分，上侧盖部分形成有设置在功能结构上方的布线层的一部分。

公开(公告)号：US20120104519A1

公开(公告)日：2012-05-03

申请号：US13344964

申请日：2012-01-06

申请人： Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

发明人： Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

IPC分类号： H01L29/84

CPC分类号： B81B3/0086 ,  B81B2201/0271

摘要： A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

摘要翻译： 微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。 井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

公开(公告)号：US20080142912A1

公开(公告)日：2008-06-19

申请号：US11928519

申请日：2007-10-30

申请人： Shogo INABA ,  Akira SATO ,  Toru WATANABE ,  Takeshi MORI

发明人： Shogo INABA ,  Akira SATO ,  Toru WATANABE ,  Takeshi MORI

IPC分类号： H03H9/02 ,  H01L21/8228

CPC分类号： H03H3/0073 ,  H03H9/1057 ,  Y10S977/721

摘要： A method is for manufacturing a microeletromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.

摘要翻译： 一种用于制造具有半导体器件和形成在衬底上的微机电系统结构单元的微机械系统谐振器的方法。 该方法包括：使用第一硅层形成包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的下电极; 使用第二硅层形成微机电系统结构单元的子结构和包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的上电极; 以及使用第三硅层形成所述微机电系统结构单元的上部结构和包括在所述半导体器件中的互补金属氧化物半导体电路单元的栅电极。

公开(公告)号：US20110095383A1

公开(公告)日：2011-04-28

申请号：US12981747

申请日：2010-12-30

申请人： Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

发明人： Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

IPC分类号： H01L29/84

CPC分类号： B81B3/0086 ,  B81B2201/0271

摘要： A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

公开(公告)号：US20110031564A1

公开(公告)日：2011-02-10

申请号：US12907337

申请日：2010-10-19

申请人： Shogo INABA ,  Akira SATO ,  Toru WATANABE ,  Takeshi MORI

发明人： Shogo INABA ,  Akira SATO ,  Toru WATANABE ,  Takeshi MORI

IPC分类号： H01L29/84

CPC分类号： B81B3/0086

摘要： A micro electro mechanical system (MEMS) device includes: a fixed electrode made of silicon and provided above a semiconductor substrate; a movable electrode made of silicon and arranged in a mechanically movable manner by having a gap from the semiconductor substrate; and a wiring layered part that is provided around the movable electrode, covers a portion of the fixed electrode and includes wiring. One of the fixed electrode and the movable electrode is implanted with an impurity ion and at least a part of the portion of the fixed electrode covered by the wiring layered part is silicidized.

摘要翻译： 微电子机械系统（MEMS）装置包括：由硅制成并设置在半导体衬底之上的固定电极; 由硅制成的可移动电极，通过与半导体衬底有间隙以机械可移动的方式布置; 以及设置在可动电极周围的布线层叠部，覆盖固定电极的一部分并且包括布线。 固定电极和可动电极之一注入杂质离子，被布线层叠部覆盖的固定电极的部分的至少一部分被硅化。

公开(公告)号：US20100140734A1

公开(公告)日：2010-06-10

申请号：US12707943

申请日：2010-02-18

申请人： Akira SATO ,  Toru WATANABE ,  Shogo INABA ,  Takeshi MORI

发明人： Akira SATO ,  Toru WATANABE ,  Shogo INABA ,  Takeshi MORI

IPC分类号： H01L29/06

CPC分类号： B81C1/00246 ,  B81B2207/015 ,  B81B2207/07 ,  B81C2203/0136 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01L21/7682 ,  H01L24/05 ,  H01L2924/14 ,  H01L2924/00

摘要： An electronic device, including a substrate, a functional structure constituting a functional element formed on the substrate, and a cover structure forming a cavity portion in which the functional structure is disposed, is disclosed. In the electronic device, the cover structure includes a laminated structure of an interlayer insulating film and a wiring layer, the laminated structure being formed on the substrate in such a way that it surrounds the cavity portion, and the cover structure has an upside cover portion covering the cavity portion from above, the upside cover portion being formed with part of the wiring layer that is disposed above the functional structure.

摘要翻译： 公开了一种电子设备，包括基板，构成在基板上形成的功能元件的功能结构，以及形成其中设置有功能结构的空腔部分的盖结构。 在电子设备中，盖结构包括层间绝缘膜和布线层的叠层结构，层叠结构以包围空腔部分的方式形成在基板上，并且盖结构具有上侧盖部分 从上方覆盖空腔部分，上侧盖部分形成有设置在功能结构上方的布线层的一部分。

公开(公告)号：US20100109815A1

公开(公告)日：2010-05-06

申请号：US12684336

申请日：2010-01-08

申请人： Shogo INABA ,  Akira SATO ,  Toru WATANABE ,  Takeshi MORI

发明人： Shogo INABA ,  Akira SATO ,  Toru WATANABE ,  Takeshi MORI

IPC分类号： H01P7/00

CPC分类号： H03H3/0073 ,  H03H9/1057 ,  Y10S977/721

摘要： A method is for manufacturing a microelectromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.

摘要翻译： 一种用于制造具有形成在基板上的半导体器件和微机电系统结构单元的微机电系统谐振器的方法。 该方法包括：使用第一硅层形成包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的下电极; 使用第二硅层形成微机电系统结构单元的子结构和包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的上电极; 以及使用第三硅层形成所述微机电系统结构单元的上部结构和包括在所述半导体器件中的互补金属氧化物半导体电路单元的栅电极。