Abstract:
A semiconductor inspecting apparatus includes: a buffer memory whose width is matched to the greater of parallel bus width and the width of the number of serial lanes; a preceding stage bus switching unit that fills the buffer memory with input data without making a free space; equivalent transmission capacity conversion including a following stage bus switching unit that fills read data to the width of an arbitrary number of serial lanes without making a free space; a preceding stage bus switching unit that fills a buffer memory with input data without making a free space; and equivalent transmission capacity inverse conversion including a following stage bus switching unit that fills a parallel bus of arbitrary width with data read from a buffer memory without making a free space.
Abstract:
A testing circuit using ALPG is mounted in a testing board in which sockets for mounting semiconductor memories as devices to be tested in the board is mounted and a volatile memory for storing a data table for generating a random pattern is provided in the testing circuit so that a test using a test pattern having no regularity is performed using the data table in addition to a test using a test pattern having regularity generated by the ALPG.
Abstract:
When an inspection apparatus of a semiconductor device repeatedly executes computation of prescribed area data, such as image processing for detecting defects, procedures for commanding, data load, computation, and data store need to be repeated the number of times of the computation. This may impose a limitation on the speeding up of the operation. In addition, when performing parallel computation by a high-capacity image processing system for handling minute images, a lot of processors are needed, resulting in an increase in cost. In order to solve the above-mentioned problems, in the invention, an inspection apparatus of a semiconductor device includes a data memory including an access section which is capable of reading and writing simultaneously, a plurality of numerical computation units, a connector for connecting the data memory and the numerical computation units, a controller for collectively controlling the contents of processing by the plurality of numerical computation units, another connector for connecting the numerical computation units and the controller, and a data transfer controller for controlling data transfer between the numerical computation units.
Abstract:
The present invention relates to a DRAM stacked packages, a DIMM, a method for testing them, and a semiconductor manufacturing method. According to the present invention, there is provided a DRAM stacked package comprising: a plurality of stacked DRAMs; external terminals to which test equipment is connected, said external terminals being used to input/output at least address, command, and data; and an interface chip provided between said plurality of stacked DRAMs and said external terminals. The plurality of DRAMs and the interface chip are implemented on a package. The interface chip comprises: a test circuit including: an algorithmic pattern generator for generating a test pattern used to test the plurality of DRAMs; applying circuits for applying said generated test pattern to the plurality of DRAMs; and a comparator for comparing each response signal received from the plurality of DRAMs with an expected value for judgment.
Abstract:
The present invention aims at performing a semiconductor integrated circuit defect analysis with a simplified analysis apparatus and simplifying a defect analysis work. A defect analysis apparatus for a semiconductor integrated circuit is characterized in that a presence/absence of a defect is detected by irradiating an electromagnetic field from a probe to the semiconductor integrated circuit and detecting an electric characteristic variation such as a power supply current variation in the semiconductor integrated circuit.
Abstract:
A testing circuit using ALPG is mounted in a testing board in which sockets for mounting semiconductor memories as devices to be tested in the board is mounted and a volatile memory for storing a data table for generating a random pattern is provided in the testing circuit so that a test using a test pattern having no regularity is performed using the data table in addition to a test using a test pattern having regularity generated by the ALPG.
Abstract:
An ion implantation equipment for implanting ion beam into an implanting target characterized in that an electrons are induced to the direction of an ion beam being injected to said implanting target, and a predetermined bias voltage is applied between a plasma generation chamber and Faraday.
Abstract:
A pattern generator permitting to output patterns at high speed and having an operating function, which is suitable for generating test patterns for memory ICs. Although it was known heretofore to increase the operating speed by operating a plurality of pattern generators, for which patterns were generated from memories, in which patterns were previously stored, in parallel, it was not possible to operate pattern generators having an operating function in parallel. A method, by which the order of execution of operation processing instructions is assigned to each of the pattern generators and operation processing instructions are accumulated and allows patterns to be generated at high speed by means of a pattern generator having an operating function. Specifically, the operating processing instructions are grouped and rearranged such that all the pattern generators execute instructions in parallel.
Abstract:
An ion implant apparatus which forms ions from an ion source into an ion beam to implant the ions into a target to be ion-implanted through an ion beam introduction tube. The ion implant apparatus comprises: radiation means for radiating an electron beam, the radiating means fixed on the ion beam introduction tube; and a target for being radiated by an electron beam, said target reflecting the electron beam to generate a reflectance beam, the electron beam causing a secondary electron beam to be emitted from the electron beam target, the electron beam target being formed so as to prevent the reflectance beam and the secondary electron beam from being directly radiated on the target to be ion-implanted. The apparatus can keep high energy electrons from the surface of a wafer thereby to prevent the wafer from being charged negatively, and can trap the high energy electrons in the measuring system thereby to decrease errors in measuring a number of dopant atoms.
Abstract:
An inspection device carries out beam scanning on a stable scanning cycle by enabling flexible change of various scanning sequences according to inspection conditions thereof, and at the same time, eliminates as much unevenness as possible in scanning cycle which hinders stabilization of charging. A beam scanning scheduler schedules beam scanning based on an inputted scanning condition, and a programmable sequencer carries out beam scanning control according to a beam scanning schedule generated by the beam scanning scheduler. The scanning scheduler calculates scanning line reference coordinates on a scanning-line-by-scanning-line basis, based on the scanning condition, and issues a scanning cycle trigger. The programmable sequencer controls supply timing of the scanning line reference coordinates and a scanning position on an in-line pixel-by-pixel basis, based on line scanning procedure information and the scanning cycle trigger provided from the beam scanning scheduler.