公开(公告)号：US07910937B2

公开(公告)日：2011-03-22

申请号：US11344472

申请日：2006-02-01

Applicant: Peng Chen ,  Soo Jin Chua ,  Zhonglin Miao ,  Sudhiranjan Tripathy

Inventor： Peng Chen ,  Soo Jin Chua ,  Zhonglin Miao ,  Sudhiranjan Tripathy

IPC: H01L33/00

CPC classification number: B82Y20/00 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/04

Abstract: A method and structure for fabricating III-V nitride layers on silicon substrates includes a substrate, a transition structure having AlGaN, AlN and GaN layers, and a superlattice structure having AlGaN and GaN layers. In the invention, the large lattice mismatch (17%) between GaN and silicon is solved by using AlN as the first buffer layer with a 5:4 coincidence between AlN(0001) and Si(111) lattice to reduce the lattice mismatch to 1.3%.

Abstract translation: 用于在硅衬底上制造III-V族氮化物层的方法和结构包括衬底，具有AlGaN，AlN和GaN层的过渡结构，以及具有AlGaN和GaN层的超晶格结构。 在本发明中，通过使用AlN作为第一缓冲层，在AlN（0001）和Si（111）晶格之间具有5:4的一致性来解决GaN和硅之间的大晶格失配（17％），以将晶格失配减小到1.3 ％。

公开(公告)号：US20060191474A1

公开(公告)日：2006-08-31

申请号：US11344472

申请日：2006-02-01

Applicant: Peng Chen ,  Soo Chua ,  Zhonglin Miao ,  Sudhiranjan Tripathy

Inventor： Peng Chen ,  Soo Chua ,  Zhonglin Miao ,  Sudhiranjan Tripathy

IPC: C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: B82Y20/00 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/04

Abstract: A method and structure for fabricating III-V nitride layers on silicon substrates includes a substrate, a transition structure having AlGaN, AlN and GaN layers, and a superlattice structure having AlGaN and GaN layers. In the invention, the large lattice mismatch (17%) between GaN and silicon is solved by using AlN as the first buffer layer with a 5:4 coincidence between AlN(0001) and Si(111) lattice to reduce the lattice mismatch to 1.3%.

Abstract translation: 用于在硅衬底上制造III-V族氮化物层的方法和结构包括衬底，具有AlGaN，AlN和GaN层的过渡结构，以及具有AlGaN和GaN层的超晶格结构。 在本发明中，通过使用AlN作为第一缓冲层，在AlN（0001）和Si（111）晶格之间具有5:4的一致性来解决GaN和硅之间的大晶格失配（17％），以将晶格失配减小到1.3 ％。

公开(公告)号：US08278725B2

公开(公告)日：2012-10-02

申请号：US12514304

申请日：2007-11-09

Applicant: Sudhiranjan Tripathy ,  Vicknesh s/o Sahmuganathan

Inventor： Sudhiranjan Tripathy ,  Vicknesh s/o Sahmuganathan

IPC: H01L21/00 ,  H01L29/04

CPC classification number: B81C1/00484 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/017

Abstract: A micromechanical structure and a method of fabricating a micromechanical structure are provided. The micromechanical structure comprises a silicon (Si) based substrate; a micromechanical element formed directly on the substrate; and an undercut formed underneath a released portion of the micromechanical element; wherein the undercut is in the form of a recess formed in the Si based substrate.

Abstract translation: 提供微机械结构和制造微机械结构的方法。 微机械结构包括基于硅（Si）的衬底; 直接形成在基板上的微机械元件; 以及形成在微机械元件的释放部分下方的底切; 其中所述底切为形成在所述Si基衬底中的凹部的形式。

公开(公告)号：US20100193781A1

公开(公告)日：2010-08-05

申请号：US12514304

申请日：2007-11-09

Applicant: Sudhiranjan Tripathy ,  Vicknesh s/o Sahmuganathan

Inventor： Sudhiranjan Tripathy ,  Vicknesh s/o Sahmuganathan

IPC: H01L29/22 ,  H01L29/20 ,  H01L29/16 ,  H01L21/203

CPC classification number: B81C1/00484 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/017

Abstract: A micromechanical structure and a method of fabricating a micromechanical structure are provided. The micromechanical structure comprises a silicon (Si) based substrate; a micromechanical element formed directly on the substrate; and an undercut formed underneath a released portion of the micromechanical element; wherein the undercut is in the form of a recess formed in the Si based substrate.

Abstract translation: 提供微机械结构和制造微机械结构的方法。 微机械结构包括基于硅（Si）的衬底; 直接形成在基板上的微机械元件; 以及形成在微机械元件的释放部分下方的底切; 其中所述底切为形成在所述Si基衬底中的凹部的形式。

公开(公告)号：US07208096B2

公开(公告)日：2007-04-24

申请号：US10602714

申请日：2003-06-25

Applicant: Ramam Akkipeddi ,  Zhongli Li ,  Sudhiranjan Tripathy ,  Soo Jin Chua

Inventor： Ramam Akkipeddi ,  Zhongli Li ,  Sudhiranjan Tripathy ,  Soo Jin Chua

IPC: B44C1/22 ,  B23K23/00

CPC classification number: H01S5/0201 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/0213 ,  H01S2304/12

Abstract: A laser device has a substrate and at least one GaN-based layer upon a first surface of the substrate, and the laser device is cleaved by cutting linear grooves into a second surface of the substrate such that the grooves are in alignment with vertical planes of the substrate. The substrate and the at least one GaN-based layer are cleaved along the vertical planes. The cutting is performed using a laser beam from an external laser source.

Abstract translation: 激光装置在衬底的第一表面上具有衬底和至少一个GaN基层，并且激光器件通过将线性沟槽切割到衬底的第二表面而被切割，使得沟槽与 底物。 衬底和至少一个GaN基层沿垂直平面切割。 使用来自外部激光源的激光束进行切割。