中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

23 records (took 0.055 seconds)

    AIRBURST SIMULATION SYSTEM AND METHOD OF SIMULATION FOR AIRBURST
    1.
    发明申请
    AIRBURST SIMULATION SYSTEM AND METHOD OF SIMULATION FOR AIRBURST 有权
    AIRBURST模拟系统及其仿真方法

    公开(公告)号：US20140065578A1

    公开(公告)日：2014-03-06

    申请号：US13705794

    申请日：2012-12-05

    Applicant: Joon-Ho LEE ,  Je-Wook CHAE ,  Eui-Jung CHOE ,  Sung-Bae LEE ,  Hyun-Jun KIM

    Inventor： Joon-Ho LEE ,  Je-Wook CHAE ,  Eui-Jung CHOE ,  Sung-Bae LEE ,  Hyun-Jun KIM

    IPC: F41G3/26

    CPC classification number: F41G3/2655 ,  F41A19/42 ,  F41A33/02 ,  F41G3/2688 ,  F41J5/02

    Abstract: The present disclosure relates to an airburst simulation system and method. The airburst simulation system includes a laser emitting unit to emit laser beam to an airburst aiming position, preset above a target hidden behind an obstacle, such that a warhead is airbursted to shoot the target, a laser detecting unit mounted onto the target to detect an arrival of the laser beam above the target, and a determining unit to measure a distance between the airburst aiming position and an arrival position of the laser detected by the laser detecting unit, and determine whether or not the target has been shot based on the distance. This allows for a simulated engagement using an airburst apparatus, with no harm to human bodies by virtue of the use of laser.

    Abstract translation: 本发明涉及一种空爆模拟系统和方法。 空爆模拟系统包括激光发射单元，其将激光束发射到预定位于障碍物后面的目标上方的空气轰击瞄准位置，使得弹头爆炸以射击目标;激光检测单元，安装在目标上以检测目标 以及确定单元，用于测量由所述激光检测单元检测到的所述爆发瞄准位置与所述激光的到达位置之间的距离，并且基于所述距离来确定所述目标是否已经被射击 。 这允许使用爆破装置的模拟接合，而不会因使用激光而对人体造成伤害。

    Signaling information processing apparatus for use in an electronic switching system
    4.
    发明授权
    Signaling information processing apparatus for use in an electronic switching system 失效
    用于电子交换系统的信令信息处理装置

    公开(公告)号：US5757805A

    公开(公告)日：1998-05-26

    申请号：US716132

    申请日：1996-09-20

    Applicant: Sung-Bae Lee

    Inventor： Sung-Bae Lee

    IPC: H04Q1/30 ,  H04J3/12 ,  H04M3/42 ,  H04M7/00 ,  H04Q3/00 ,  H04Q11/04 ,  H04J3/02

    CPC classification number: H04Q3/0025 ,  H04J3/12 ,  H04Q11/04 ,  H04M3/4228 ,  H04M7/00 ,  H04Q2213/13106 ,  H04Q2213/13176 ,  H04Q2213/1334

    Abstract: A novel apparatus effectively processes signaling information to be communicated between an electronic switching system (ESS) and at least one other ESS. In case of transmitting a plurality of signaling information from one ESS to the other ESS's, a plurality of signaling data is first provided from corresponding user parts contained in the ESS to a signaling message handler wherein they are routed to corresponding signaling links. Next, at a signaling link processor, the status of all the signaling links formed between the ESS and the other ESS's and the status of each of the plurality of signaling data are checked and analyzed to generate information representing their status. Using the plurality of the signaling data and generated information, a corresponding number of signaling units are formed for the reliable transmission thereof. Finally, the plurality of signaling units are relayed to a block that interfaces and transmits each of them to the other ESS's.

    Abstract translation: 一种新颖的装置有效地处理要在电子交换系统（ESS）和至少一个其他ESS之间通信的信令信息。 在将多个信令信息从一个ESS发送到另一个ESS的情况下，首先从包含在ESS中的相应用户部分向信令消息处理器提供多个信令数据，其中它们被路由到相应的信令链路。 接下来，在信令链路处理器处，检查并分析在ESS与其它ESS之间形成的所有信令链路的状态和多个信令数据中的每一个的状态，以生成表示其状态的信息。 使用多个信令数据和生成的信息，形成相应数量的信令单元用于其可靠传输。 最后，多个信令单元被中继到一个块，它们将它们中的每一个传送到另一个ESS。

    Method of forming a trench for use in manufacturing a semiconductor device
    8.
    发明申请
    Method of forming a trench for use in manufacturing a semiconductor device 审中-公开
    形成用于制造半导体器件的沟槽的方法

    公开(公告)号：US20070117378A1

    公开(公告)日：2007-05-24

    申请号：US11655159

    申请日：2007-01-19

    Applicant: Sung-Bae Lee ,  Sang-Rok Hah ,  Hong-Seong Son

    Inventor： Sung-Bae Lee ,  Sang-Rok Hah ,  Hong-Seong Son

    IPC: H01L21/4763 ,  H01L21/44 ,  H01L21/302

    CPC classification number: H01L27/10885 ,  H01L21/76229 ,  H01L21/76232 ,  H01L29/66181

    Abstract: A method for use in manufacturing a semiconductor device includes forming a photoresist pattern on a substrate, performing first etching process in which an initial trench is formed using the photoresist pattern as a mask, and performing second distinct etching process to enlarge the initial trench. Thus, the initial trench can be formed using the photoresist pattern having a stable structure. Thereafter, the trench is enlarged using an etching solution having a composition based on the material in which the initial trench is formed, e.g., silicon substrate or an insulation film. Therefore, a metal wiring, an isolation film or a contact can be formed in the enlarged trench to desired dimensions.

    Abstract translation: 一种用于制造半导体器件的方法包括在衬底上形成光致抗蚀剂图案，执行第一蚀刻工艺，其中使用光致抗蚀剂图案作为掩模形成初始沟槽，并且执行第二不同的蚀刻工艺以扩大初始沟槽。 因此，可以使用具有稳定结构的光致抗蚀剂图案来形成初始沟槽。 此后，使用具有基于其中形成初始沟槽的材料的组成的蚀刻溶液（例如硅衬底或绝缘膜）来扩大沟槽。 因此，可以在扩大的沟槽中形成金属布线，隔离膜或接触件到期望的尺寸。

    Method of chemical mechanical polishing
    9.
    发明授权
    Method of chemical mechanical polishing 失效
    化学机械抛光方法

    公开(公告)号：US07048612B2

    公开(公告)日：2006-05-23

    申请号：US10920323

    申请日：2004-08-18

    Applicant: Sung-Bae Lee ,  Sang-Rok Ha ,  Hyo-Jong Lee

    Inventor： Sung-Bae Lee ,  Sang-Rok Ha ,  Hyo-Jong Lee

    IPC: B24B1/00

    CPC classification number: H01L21/3212 ,  B24B37/042 ,  H01L21/31053

    Abstract: A method of chemical mechanical polishing that polishes a substrate by abrading a target material formed on the substrate with a polishing pad containing a slurry includes setting a polishing end time, at which time a predetermined thickness of the target material will have been removed from the substrate by polishing, polishing the substrate to remove the predetermined thickness of the target material, and increasing a level of byproduct contamination in the polishing pad to decrease a polishing rate, while polishing the substrate, so that the polishing rate decreases to approximately zero at the polishing end time.

    Abstract translation: 通过用包含浆料的抛光垫研磨形成在基板上的目标材料来抛光基板的化学机械抛光方法包括设置抛光结束时间，此时目标材料的预定厚度将从基板去除 通过抛光，抛光基板以去除预定厚度的目标材料，并且在抛光基板时增加抛光垫中的副产物污染水平以降低抛光速率，使得抛光速率在抛光时降低到大约零 时间结束。

    Method of chemical mechanical polishing
    10.
    发明申请
    Method of chemical mechanical polishing 失效
    化学机械抛光方法

    公开(公告)号：US20050070091A1

    公开(公告)日：2005-03-31

    申请号：US10920323

    申请日：2004-08-18

    Applicant: Sung-Bae Lee ,  Sang-Rok Ha ,  Hyo-Jong Lee

    Inventor： Sung-Bae Lee ,  Sang-Rok Ha ,  Hyo-Jong Lee

    IPC: B24B37/04 ,  H01L21/3105 ,  H01L21/321 ,  B24B1/00 ,  H01L21/4763

    CPC classification number: H01L21/3212 ,  B24B37/042 ,  H01L21/31053

    Abstract: A method of chemical mechanical polishing that polishes a substrate by abrading a target material formed on the substrate with a polishing pad containing a slurry includes setting a polishing end time, at which time a predetermined thickness of the target material will have been removed from the substrate by polishing, polishing the substrate to remove the predetermined thickness of the target material, and increasing a level of byproduct contamination in the polishing pad to decrease a polishing rate, while polishing the substrate, so that the polishing rate decreases to approximately zero at the polishing end time.

    Abstract translation: 通过用包含浆料的抛光垫研磨形成在基板上的目标材料来抛光基板的化学机械抛光方法包括设置抛光结束时间，此时目标材料的预定厚度将从基板去除 通过抛光，抛光基板以去除预定厚度的目标材料，并且在抛光基板时增加抛光垫中的副产物污染水平以降低抛光速率，使得抛光速率在抛光时降低到大约零 时间结束。

Patent Agency Ranking