Fully reticulated detectors for curved focal plane arrays

    公开(公告)号:US11581355B2

    公开(公告)日:2023-02-14

    申请号:US17060575

    申请日:2020-10-01

    发明人: Majid Zandian

    摘要: A curved FPA comprises an array of detectors, with mesas etched between the detectors such that they are electrically and physically isolated from each other. Metallization deposited at the bottom of the mesas reconnects the detectors electrically and thereby provides a common ground between them. Strain induced by bending the FPA into a curved shape is across the metallization and any backfill epoxy, rather than across the detectors. Indium bumps are evaporated onto respective detectors for connection to a readout integrated circuit (ROIC). An ROIC coupled to the detectors is preferably thinned, and the backside of the ROIC may also include mesas such that the ROIC is reticulated.

    COOKWARE AND A METHOD OF MANUFACTURE THEREOF

    公开(公告)号:US20220160161A1

    公开(公告)日:2022-05-26

    申请号:US17430773

    申请日:2019-03-27

    IPC分类号: A47J27/024 A47J27/00

    摘要: Cookware and a method of manufacture thereof are provided. The method comprises forming a fluid conduit defining a volume in a base of the cookware, the base comprising a heating zone configured for thermal communication with the fluid conduit. A working fluid is introduced to the fluid conduit via an open end of the fluid conduit. A liquid phase of the working fluid occupies less than the volume of the fluid conduit. The fluid conduit is Sized and configured to form vapor segments and liquid segments interspersed throughout the fluid conduit from the working fluid. The open end of the fluid conduit is sealed to define a closed fluid system.

    LATERALLY-GATED TRANSISTORS AND LATERAL SCHOTTKY DIODES WITH INTEGRATED LATERAL FIELD PLATE STRUCTURES

    公开(公告)号:US20220085176A1

    公开(公告)日:2022-03-17

    申请号:US17022521

    申请日:2020-09-16

    摘要: Laterally-gated transistors and lateral Schottky diodes are disclosed. The FET includes a substrate, source and drain electrodes, channel, a gate electrode structure, and a dielectric layer. The gate electrode structure includes an electrode in contact with the channel and a lateral field plate adjacent to the electrode. The dielectric layer is disposed between the lateral field plate and the channel. The lateral field plate contacts the dielectric layer and to modulate an electric field proximal to the gate electrode proximal to the drain or source electrodes. Also disclosed is a gate electrode structure with lateral field plates symmetrically disposed relative to the gate electrode. Also disclosed in a substrate with dielectric structures buried in the substrate remote from the gate electrode structure. A lateral Schottky diode having an anode structure includes an anode (A), cathodes (C) and lateral field plates located between the anode and the cathodes.

    System and Method of Sleep Induction

    公开(公告)号:US20210236806A1

    公开(公告)日:2021-08-05

    申请号:US17160442

    申请日:2021-01-28

    摘要: A sleep induction device includes a headband, multiple transcranial stimulation electrodes, and control electronics to drive the electrodes. The sleep induction device may be worn by an awake user prior to attempting sleep. The control electronics are configured to cause the stimulation electrodes to emit a sequence of stimulation waveforms separated by interstimulus periods. The stimulation waveforms may have the characteristics of low-delta waveforms that may characterize non-REM stage 3 sleep. The stimulation period may last from about 4-8 seconds and the interstimulus period may last from about 10 to 30 seconds. A sleep induction session may include multiple alternating stimulation and non-stimulation periods. The sleep induction session may last for about 5 minutes to about 30 minutes.