TRENCH DOUBLE LAYER HETEROSTRUCTURE
    1.
    发明申请

    公开(公告)号:US20190109247A1

    公开(公告)日:2019-04-11

    申请号:US15728417

    申请日:2017-10-09

    Inventor: Majid Zandian

    Abstract: A light sensor includes an N-type semiconductor. The light sensor further includes a P-type semiconductor stacked on at least a portion of the N-type semiconductor, partially defining a trench extending into the P-type semiconductor, and having a trench portion aligned with the trench and extending farther into the N-type semiconductor than other portions of the P-type semiconductor. The light sensor also includes a passivation layer stacked on and contacting the P-type semiconductor and partially defining the trench that extends through the passivation layer and into the P-type semiconductor. The light sensor further includes an electrical contact stacked on the passivation layer, positioned within the trench, and extending through the passivation layer into the P-type semiconductor such that photons received by the N-type semiconductor generate photocurrent resulting in a voltage at the electrical contact.

    Fully reticulated detectors for curved focal plane arrays

    公开(公告)号:US11581355B2

    公开(公告)日:2023-02-14

    申请号:US17060575

    申请日:2020-10-01

    Inventor: Majid Zandian

    Abstract: A curved FPA comprises an array of detectors, with mesas etched between the detectors such that they are electrically and physically isolated from each other. Metallization deposited at the bottom of the mesas reconnects the detectors electrically and thereby provides a common ground between them. Strain induced by bending the FPA into a curved shape is across the metallization and any backfill epoxy, rather than across the detectors. Indium bumps are evaporated onto respective detectors for connection to a readout integrated circuit (ROIC). An ROIC coupled to the detectors is preferably thinned, and the backside of the ROIC may also include mesas such that the ROIC is reticulated.

    Trench double layer heterostructure

    公开(公告)号:US10553735B2

    公开(公告)日:2020-02-04

    申请号:US15728417

    申请日:2017-10-09

    Inventor: Majid Zandian

    Abstract: A light sensor includes an N-type semiconductor. The light sensor further includes a P-type semiconductor stacked on at least a portion of the N-type semiconductor, partially defining a trench extending into the P-type semiconductor, and having a trench portion aligned with the trench and extending farther into the N-type semiconductor than other portions of the P-type semiconductor. The light sensor also includes a passivation layer stacked on and contacting the P-type semiconductor and partially defining the trench that extends through the passivation layer and into the P-type semiconductor. The light sensor further includes an electrical contact stacked on the passivation layer, positioned within the trench, and extending through the passivation layer into the P-type semiconductor such that photons received by the N-type semiconductor generate photocurrent resulting in a voltage at the electrical contact.

    SPECTROSCOPIC FOCAL PLANE ARRAY AND METHOD OF MAKING SAME

    公开(公告)号:US20190072432A1

    公开(公告)日:2019-03-07

    申请号:US15697934

    申请日:2017-09-07

    Inventor: Majid Zandian

    Abstract: A semiconductor material emitting device is positioned such that its output flux impinges on a substrate at a non-perpendicular angle, so as to grow a first epilayer which is linearly graded in the direction perpendicular to the growth direction. The linear grading can be arranged such that, for example, each row of pixels has a different cutoff wavelength, thereby making it possible to provide a spectroscopic FPA without the use of filters. The non-perpendicular angle and/or the flux intensity can be adjusted to achieve a desired compositional grading. A spectral ellipsometer may be used to monitor the composition of the epilayer during the fabrication process, and to control the intensity of the flux.

    Hybrid assembly with improved thermal performance
    9.
    发明授权
    Hybrid assembly with improved thermal performance 有权
    具有改善热性能的混合组合

    公开(公告)号:US09520336B1

    公开(公告)日:2016-12-13

    申请号:US14994618

    申请日:2016-01-13

    Abstract: A method of improving the thermal performance of a hybrid assembly which comprises a first die, a second die, and indium bonds which bond and electrically interconnect the first die to the second die. A heat sink plate on which the hybrid assembly is to be mounted is provided. A plurality of indium bumps are deposited on the plate where the assembly is to be mounted. The bottom side of the hybrid assembly is then pressed onto the indium bumps to affix the assembly to the plate. The heat sink plate constrains the lateral coefficient of thermal expansion (CTE) of the second die such that the CTEs of the first and second dies match more closely than they would if the hybrid assembly was not mounted directly to a heat sink plate using indium bumps. The heat sink plate preferably comprises copper tungsten (CuW) or a diamond-metal composite.

    Abstract translation: 一种改进混合组件的热性能的方法,其包括将第一管芯与第二管芯结合并电连接的第一管芯,第二管芯和铟焊盘。 提供了要安装混合组件的散热板。 在要安装组件的板上沉积多个铟凸块。 然后将混合组件的底侧按压到铟凸块上以将组件固定到板上。 散热板限制了第二模具的横向热膨胀系数(CTE),使得第一和第二模具的CTE比如果混合组件没有使用铟凸块直接安装到散热板的情况更匹配 。 散热板优选包括铜钨(CuW)或金刚石 - 金属复合材料。

    FULLY RETICULATED DETECTORS FOR CURVED FOCAL PLANE ARRAYS

    公开(公告)号:US20210118934A1

    公开(公告)日:2021-04-22

    申请号:US17060575

    申请日:2020-10-01

    Inventor: Majid Zandian

    Abstract: A curved FPA comprises an array of detectors, with mesas etched between the detectors such that they are electrically and physically isolated from each other. Metallization deposited at the bottom of the mesas reconnects the detectors electrically and thereby provides a common ground between them. Strain induced by bending the FPA into a curved shape is across the metallization and any backfill epoxy, rather than across the detectors. Indium bumps are evaporated onto respective detectors for connection to a readout integrated circuit (ROIC). An ROIC coupled to the detectors is preferably thinned, and the backside of the ROIC may also include mesas such that the ROIC is reticulated.

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