公开(公告)号：US20120213949A1

公开(公告)日：2012-08-23

申请号：US13030223

申请日：2011-02-18

申请人： CHIEN-MIN WENG ,  SHIH-LIANG CHOU ,  TZU-WEN CHU ,  FU-JEN WANG ,  FENG-SHIANG YAO

发明人： CHIEN-MIN WENG ,  SHIH-LIANG CHOU ,  TZU-WEN CHU ,  FU-JEN WANG ,  FENG-SHIANG YAO

IPC分类号： H05H1/24

CPC分类号： C23C14/086 ,  C23C14/0036 ,  C23C14/5806

摘要： The invention relates to a method for producing a transparent indium tin oxide conductive layer on a substrate. The method involves using a target having a low indium-to-tin ratio in a low temperature manufacturing process (less than 200° C.), and introducing a plasma gas and a reaction gas into the reaction chamber to allow sputtering of an indium tin oxide layer on the substrate under a low oxygen environment, followed by subjecting the sputtered substrate to a heat treatment at 150˜200° C. for 60˜90 minutes. The indium tin oxide layer thus produced will crystallize completely and have the advantageous properties of low surface resistance and high uniformity.

摘要翻译： 本发明涉及在基板上制造透明铟锡氧化物导电层的方法。 该方法包括在低温制造工艺（小于200℃）中使用具有低铟 - 锡比的靶，并将等离子体气体和反应气体引入反应室以允许溅射铟锡 在低氧环境下在基板上形成氧化物层，接着在150〜200℃下对溅射基板进行60〜90分钟的热处理。 由此制造的氧化铟锡层将完全结晶，具有低表面电阻和高均匀性的有利特性。

公开(公告)号：US20120009354A1

公开(公告)日：2012-01-12

申请号：US12832738

申请日：2010-07-08

申请人： CHIEN-MIN WENG ,  Shih-Liang Chou ,  Tzu-Wen Chu ,  Fu-Jen Wang

发明人： CHIEN-MIN WENG ,  Shih-Liang Chou ,  Tzu-Wen Chu ,  Fu-Jen Wang

IPC分类号： C03C17/23 ,  B08B7/00 ,  C03C17/00 ,  C03C15/00 ,  B05D3/10 ,  B05D5/12

CPC分类号： C03C17/23 ,  C03C23/0075 ,  C03C2218/31

摘要： A method for treating a surface of a glass substrate according to the invention has the steps of placing the glass substrate into a vacuum treatment chamber, introducing a gas into the vacuum treatment chamber, providing electric power to generate an ion source and using the ion source to treat the surface of the glass substrate. By this way, the invention can achieve an effect of surface cleaning and further render the conductive film to be coated on the glass substrate in the subsequent stage to have a reduced surface resistance, thereby improving the conductivity of the glass substrate. The film coated on the glass substrate in the subsequent stage will have higher crystalline level as well.

摘要翻译： 根据本发明的用于处理玻璃基板的表面的方法具有以下步骤：将玻璃基板放置在真空处理室中，将气体引入真空处理室，提供电力以产生离子源并使用离子源 以处理玻璃基板的表面。 这样，本发明可以实现表面清洁的效果，并且在随后的阶段中进一步使导电膜涂覆在玻璃基板上，从而具有降低的表面电阻，从而提高玻璃基板的导电性。 在后续阶段涂覆在玻璃基板上的薄膜也将具有更高的晶体水平。

公开(公告)号：US20110234507A1

公开(公告)日：2011-09-29

申请号：US12847327

申请日：2010-07-30

申请人： SHIH-LIANG CHOU ,  HSUEH-CHIH CHIANG ,  CHIEN-MIN WENG ,  TZU-WEN CHU ,  FU-JEN WANG ,  I-WEN LEE ,  HSING-YEH CHEN

发明人： SHIH-LIANG CHOU ,  HSUEH-CHIH CHIANG ,  CHIEN-MIN WENG ,  TZU-WEN CHU ,  FU-JEN WANG ,  I-WEN LEE ,  HSING-YEH CHEN

IPC分类号： G06F3/041 ,  C23C14/34

CPC分类号： G06F3/044 ,  G06F2203/04103

摘要： The present invention provides an integrated touch panel comprising a transparent substrate, one of an icon or artwork layer, a first layer of optical film, and a first sensing layer. The icon layer or artwork layer is coated on the periphery of one side face of the transparent substrate, and the inner periphery of the icon layer or artwork layer is not perpendicular to the adjacent line of the transparent substrate. The first layer of optical film is stacked on icon layer or artwork layer and the areas on the transparent substrate uncovered with icon layer. The first sensing layer is stacked on the first layer of optical film by sputtering. The interchangeability is included in the patent claim of the present invention. As icon layer or artwork layer is not perpendicular to the transparent substrate, the subsequent cladding of the structures may be completed by sputtering or other methods.

摘要翻译： 本发明提供了一种集成触摸面板，其包括透明基板，图标或图案层之一，第一层光学膜和第一感测层。 图标层或艺术品层涂覆在透明基板的一个侧面的周边上，图标层或艺术品层的内周不垂直于透明基板的相邻线。 第一层光学膜层叠在图标层或艺术品层上，透明基板上的区域被图标层覆盖。 第一感测层通过溅射堆叠在第一层光学膜上。 互换性包括在本发明的专利权利要求中。 由于图标层或艺术品层不垂直于透明基底，因此可以通过溅射或其它方法来完成随后的结构包层。

公开(公告)号：US20100101937A1

公开(公告)日：2010-04-29

申请号：US12260092

申请日：2008-10-29

申请人： Chien-Min Weng ,  Tzu-Wen Chu ,  Chiao-Ning Huang ,  I-Wen Lee ,  Shih-Liang Chou

发明人： Chien-Min Weng ,  Tzu-Wen Chu ,  Chiao-Ning Huang ,  I-Wen Lee ,  Shih-Liang Chou

IPC分类号： C23C14/34

CPC分类号： C23C14/025 ,  C23C14/086 ,  C23C14/34

摘要： A method of fabricating transparent conductive film including the following steps is provided. First, a reactive chamber having at least a target and at least a heating device is provided. Subsequentially, a plasma is generated in the reactive chamber, wherein the plasma is located above the target. Next, the plasma is heated by the heating device from a standby temperature to a working temperature. Simultaneously, a hard plastic substrate is passed above the plasma at a specific speed, wherein the particles of the target are bombarded by the plasma so as to form transparent conductive film on the hard plastic substrate.

摘要翻译： 提供一种制造透明导电膜的方法，包括以下步骤。 首先，提供具有至少目标物和至少一个加热装置的活性室。 其次，在反应室中产生等离子体，其中等离子体位于靶上方。 接下来，等离子体被加热装置从待机温度加热到工作温度。 同时，硬质塑料基板以特定速度通过等离子体上方，其中靶的粒子被等离子体轰击，以在硬塑料基板上形成透明导电膜。

公开(公告)号：US20070119704A1

公开(公告)日：2007-05-31

申请号：US11698904

申请日：2007-01-29

申请人： Jau-Jier Chu ,  Hsu-Fu Hung ,  I-Wen Lee ,  Chien-Min Weng ,  Tzu-Wen Chu

发明人： Jau-Jier Chu ,  Hsu-Fu Hung ,  I-Wen Lee ,  Chien-Min Weng ,  Tzu-Wen Chu

IPC分类号： C23C14/00

CPC分类号： C23C14/562 ,  C23C14/086 ,  C23C14/541

摘要： A method for sputtering a multilayer film on a sheet workpiece at a low temperature of the present invention has the following steps: employing plasma to modify a surface of a sheet workpiece, providing a reciprocating sputtering process to deposit metal oxide layers or semiconductor oxide layers on the sheet workpiece, preheating the sheet workpiece and providing a reciprocating ITO sputtering process to sputter ITO transparent conductive layers on the sheet workpiece. The film sputtering process of the sheet workpiece employs continuously connecting work line and controls delay time between the sputtering units to deposit a film with a predetermined thickness on the sheet workpiece.

摘要翻译： 在本发明的低温下在薄板工件上溅射多层膜的方法具有以下步骤：使用等离子体来改变片材工件的表面，提供往复溅射工艺以将金属氧化物层或半导体氧化物层沉积在 片材工件，预热片材工件，并提供往复式ITO溅射工艺，以在片材工件上溅射ITO透明导电层。 片材工件的薄膜溅射工艺采用连续的连续工作线，并控制溅射单元之间的延迟时间，以在薄板工件上沉积预定厚度的薄膜。

公开(公告)号：US20070119702A1

公开(公告)日：2007-05-31

申请号：US11289289

申请日：2005-11-30

申请人： Jau-Jier Chu ,  Hsu-Fu Hung ,  I-Wen Lee ,  Chien-Min Weng ,  Tzu-Wen Chu

发明人： Jau-Jier Chu ,  Hsu-Fu Hung ,  I-Wen Lee ,  Chien-Min Weng ,  Tzu-Wen Chu

IPC分类号： C23C14/00

CPC分类号： C23C14/562

摘要： A method for sputtering a multilayer film on a sheet workpiece at a low temperature of the present invention has the following steps: employing plasma to clean a surface of a sheet workpiece, sputtering at least one metal oxide or semiconductor oxide on the sheet workpiece, and sputtering at least one ITO transparent electric layer on the sheet workpiece. The film sputtering process of the sheet workpiece employs continuously connecting work stations, thereby controlling delay time between the work stations of the sheet workpiece within a given range. The sheet workpiece is made from a macromolecular material.

摘要翻译： 在本发明的低温下在薄板工件上溅射多层膜的方法具有以下步骤：使用等离子体清洁片材工件的表面，在片材工件上溅射至少一种金属氧化物或半导体氧化物，以及 在片材工件上溅射至少一个ITO透明电层。 片材工件的薄膜溅射工艺使用连续的连续工作站，从而控制在给定范围内的片材工件的工作站之间的延迟时间。 片材工件由大分子材料制成。

公开(公告)号：US20140071533A1

公开(公告)日：2014-03-13

申请号：US13606952

申请日：2012-09-07

申请人： TING-CHING KUO ,  JYR-DWO LEE ,  SHIH-LIANG CHOU ,  CHIEN-MIN WENG ,  TZU-WEN CHU

发明人： TING-CHING KUO ,  JYR-DWO LEE ,  SHIH-LIANG CHOU ,  CHIEN-MIN WENG ,  TZU-WEN CHU

IPC分类号： G02B1/11

CPC分类号： G02B1/11 ,  G06F3/041

摘要： The invention relates to a transparent conductive film. The transparent conductive film has a plastic film substrate, whose two surfaces are provided in sequence with at least two undercoat layers and a patterned transparent conductive layer, respectively. The invention overcomes the drawback of image deterioration caused by the patterning of the transparent conductive layers and reduces the optical difference between the patterned regions and the non-patterned regions by adjusting the refractive indexes and thicknesses of the various layers.

摘要翻译： 本发明涉及一种透明导电膜。 透明导电膜具有塑料膜基板，其两个表面分别依次设置有至少两个底涂层和图案化的透明导电层。 本发明克服了由透明导电层的图案化引起的图像劣化的缺点，并且通过调整各层的折射率和厚度来减小图案化区域和非图案化区域之间的光学差异。

公开(公告)号：US08245535B2

公开(公告)日：2012-08-21

申请号：US12575471

申请日：2009-10-08

申请人： Chien-Min Weng ,  Tzu-Wen Chu ,  Chiao-Ning Huang ,  Fu-Jen Wang ,  Shih-Liang Chou ,  I-Wen Lee ,  Ching-Hsiu Cheng

发明人： Chien-Min Weng ,  Tzu-Wen Chu ,  Chiao-Ning Huang ,  Fu-Jen Wang ,  Shih-Liang Chou ,  I-Wen Lee ,  Ching-Hsiu Cheng

IPC分类号： C03C15/00 ,  C03C21/00

CPC分类号： C03C23/006 ,  C03C21/002

摘要： A method of strengthening glass plate is provided. A plasma treating process is performed on a glass plate so that a surface pore variation of the glass plate after the plasma treating process is reduced relative to the surface pore variation of the glass plate before the plasma treating process, wherein the surface pore variation is a variation degree of surface pores in different unit areas of the glass plate. In the mean time, a melted network crosslinking structure is formed on the surface of the glass plate. Based on the above-mentioned mechanisms, the glass plate is strengthened. The plasma treating process is conducive to strengthen the glass plate whether the plasma treating process is performed before or after the conventional chemical strengthening process.

摘要翻译： 提供一种强化玻璃板的方法。 在玻璃板上进行等离子体处理，使等离子体处理后的玻璃板的表面孔隙变化相对于等离子体处理工序前的玻璃板的表面孔隙变化量减小，其中表面孔隙变化为 玻璃板不同单位面积的表面孔隙变化程度。 同时，在玻璃板的表面上形成熔融的网状交联结构。 基于上述机理，玻璃板被加强。 等离子体处理方法有利于加强玻璃板，无论是否在常规化学强化过程之前或之后进行等离子体处理工艺。

公开(公告)号：US20110056244A1

公开(公告)日：2011-03-10

申请号：US12575471

申请日：2009-10-08

申请人： Chien-Min Weng ,  Tzu-Wen Chu ,  Chiao-Ning Huang ,  Fu-Jen Wang ,  Shih-Liang Chou ,  I-Wen Lee ,  Ching-Hsiu Cheng

发明人： Chien-Min Weng ,  Tzu-Wen Chu ,  Chiao-Ning Huang ,  Fu-Jen Wang ,  Shih-Liang Chou ,  I-Wen Lee ,  Ching-Hsiu Cheng

IPC分类号： C03C21/00 ,  C03C23/00

CPC分类号： C03C23/006 ,  C03C21/002

摘要： A method of strengthening glass plate is provided. A plasma treating process is performed on a glass plate so that a surface pore variation of the glass plate after the plasma treating process is reduced relative to the surface pore variation of the glass plate before the plasma treating process, wherein the surface pore variation is a variation degree of surface pores in different unit areas of the glass plate. In the mean time, a melted network crosslinking structure is formed on the surface of the glass plate. Based on the above-mentioned mechanisms, the glass plate is strengthened. The plasma treating process is conducive to strengthen the glass plate whether the plasma treating process is performed before or after the conventional chemical strengthening process.

摘要翻译： 提供一种强化玻璃板的方法。 在玻璃板上进行等离子体处理，使等离子体处理后的玻璃板的表面孔隙变化相对于等离子体处理前的玻璃板的表面孔隙变化量减小，其中表面孔隙变化为 玻璃板不同单位面积的表面孔隙变化程度。 同时，在玻璃板的表面上形成熔融的网状交联结构。 基于上述机理，玻璃板被加强。 等离子体处理方法有利于加强玻璃板，无论是否在常规化学强化过程之前或之后进行等离子体处理工艺。

公开(公告)号：US08580353B2

公开(公告)日：2013-11-12

申请号：US12832738

申请日：2010-07-08

申请人： Chien-Min Weng ,  Shih-Liang Chou ,  Tzu-Wen Chu ,  Fu-Jen Wang

发明人： Chien-Min Weng ,  Shih-Liang Chou ,  Tzu-Wen Chu ,  Fu-Jen Wang

IPC分类号： H05H1/00 ,  C23C14/02

CPC分类号： C03C17/23 ,  C03C23/0075 ,  C03C2218/31

摘要： A method for treating a surface of a glass substrate according to the invention has the steps of placing the glass substrate into a vacuum treatment chamber, introducing a gas into the vacuum treatment chamber, providing electric power to generate an ion source and using the ion source to treat the surface of the glass substrate. By this way, the invention can achieve an effect of surface cleaning and further render the conductive film to be coated on the glass substrate in the subsequent stage to have a reduced surface resistance, thereby improving the conductivity of the glass substrate. The film coated on the glass substrate in the subsequent stage will have higher crystalline level as well.

摘要翻译： 根据本发明的用于处理玻璃基板的表面的方法具有以下步骤：将玻璃基板放置在真空处理室中，将气体引入真空处理室，提供电力以产生离子源并使用离子源 以处理玻璃基板的表面。 这样，本发明可以实现表面清洁的效果，并且在随后的阶段中进一步使导电膜涂覆在玻璃基板上，从而具有降低的表面电阻，从而提高玻璃基板的导电性。 在后续阶段涂覆在玻璃基板上的薄膜也将具有更高的晶体水平。