公开(公告)号：US08222631B2

公开(公告)日：2012-07-17

申请号：US11508147

申请日：2006-08-23

申请人： Hun-Jung Lee ,  Taek Ahn

发明人： Hun-Jung Lee ,  Taek Ahn

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0015 ,  H01L27/3248 ,  H01L27/3274 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

摘要： An organic thin film transistor in which source and drain electrodes have a double layer structure to aid patterning of an organic semiconductor layer using a laser beam, and a flat display device having the organic thin film transistor. The organic thin film transistor includes: a gate electrode; a source electrode and a drain electrode insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and having a portion patterned to electrically connect to the source and drain electrodes; and a protection layer formed on the source and drain electrodes.

摘要翻译： 一种有机薄膜晶体管，其中源极和漏极具有双层结构以辅助使用激光束图案化有机半导体层，以及具有该有机薄膜晶体管的平面显示器件。 有机薄膜晶体管包括：栅电极; 与栅电极绝缘的源电极和漏电极; 与栅电极绝缘并且具有图案化以电连接到源极和漏极的部分的有机半导体层; 以及形成在源极和漏极上的保护层。

公开(公告)号：US20070131926A1

公开(公告)日：2007-06-14

申请号：US11508147

申请日：2006-08-23

申请人： Hun-Jung Lee ,  Taek Ahn

发明人： Hun-Jung Lee ,  Taek Ahn

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0015 ,  H01L27/3248 ,  H01L27/3274 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

摘要： An organic thin film transistor in which source and drain electrodes have a double layer structure to aid patterning of an organic semiconductor layer using a laser beam, and a flat display device having the organic thin film transistor. The organic thin film transistor includes: a gate electrode; a source electrode and a drain electrode insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and having a portion patterned to electrically connect to the source and drain electrodes; and a protection layer formed on the source and drain electrodes.

摘要翻译： 一种有机薄膜晶体管，其中源极和漏极具有双层结构以辅助使用激光束图案化有机半导体层，以及具有该有机薄膜晶体管的平面显示器件。 有机薄膜晶体管包括：栅电极; 与栅电极绝缘的源电极和漏电极; 与栅电极绝缘并且具有图案化以电连接到源极和漏极的部分的有机半导体层; 以及形成在源极和漏极上的保护层。

公开(公告)号：US07800102B2

公开(公告)日：2010-09-21

申请号：US11582467

申请日：2006-10-18

申请人： Jin-Seong Park ,  Taek Ahn ,  Min-Chul Suh

发明人： Jin-Seong Park ,  Taek Ahn ,  Min-Chul Suh

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0533 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L27/3274 ,  H01L51/0545

摘要： The organic TFT includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer insulating the gate electrode from the source and drain electrodes and the organic semiconductor layer; and a self-assembly monolayer (SAM) included between the insulating layer and the organic semiconductor layer. A compound forming the SAM has at least one terminal group selected from the group consisting of an unsubstituted or substituted C6-C30 aryl group and an unsubstituted or substituted C2-C30 heteroaryl group. The organic TFT is formed by forming the above-described layers and forming the SAM on the insulating layer before the organic semiconductor layer and source and drain electrodes are formed. Thus, the adhesive force between the organic semiconductor layer and the insulating layer increases and the phase separation of the organic semiconductor material caused by heat can be prevented, thereby obtaining a flat panel display device with improved reliability.

摘要翻译： 有机TFT包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 将栅电极与源电极和漏电极以及有机半导体层绝缘的绝缘层; 以及包括在绝缘层和有机半导体层之间的自组装单层（SAM）。 形成SAM的化合物具有至少一个选自未取代或取代的C 6 -C 30芳基和未取代或取代的C 2 -C 30杂芳基的末端基团。 在形成有机半导体层和源极和漏极之前，通过形成上述层并在绝缘层上形成SAM来形成有机TFT。 因此，有机半导体层和绝缘层之间的粘合力增加，并且可以防止由热引起的有机半导体材料的相分离，从而获得可靠性提高的平板显示装置。

公开(公告)号：US20090181482A1

公开(公告)日：2009-07-16

申请号：US12379817

申请日：2009-03-02

申请人： Min-Chul Suh ,  Taek Ahn ,  Yong-Woo Park

发明人： Min-Chul Suh ,  Taek Ahn ,  Yong-Woo Park

IPC分类号： H01L21/28

CPC分类号： H01L27/3246 ,  H01L27/3248 ,  H01L27/3262 ,  H01L51/0541 ,  H01L51/5218 ,  H01L2251/5315

摘要： A flat panel display apparatus includes a gate insulating layer having openings which define pixels. The flat panel display apparatus includes: a substrate; a source electrode and a drain electrode formed on the substrate; a semiconductor layer contacting the source electrode and the drain electrode; a gate formed on the substrate; an insulating layer formed between the source and drain electrodes and the gate, and including an opening; and a pixel electrode partially exposed by the opening of the insulating layer. The insulating layer acts as a gate insulating layer and a pixel definition layer defining the pixel electrode.

公开(公告)号：US20090170291A1

公开(公告)日：2009-07-02

申请号：US12318915

申请日：2009-01-12

申请人： Taek Ahn ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Taek Ahn ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L21/20 ,  H01L21/28

CPC分类号： H01L27/3274 ,  H01L27/283 ,  H01L51/0017 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.

摘要翻译： 一种防止有机半导体层的表面被损坏并降低截止电流的有机薄膜晶体管，其制造方法和结合有机薄膜晶体管的有机发光器件。 有机薄膜晶体管包括基板，设置在基板上的源极和漏极，与源极和漏极接触的半导体层，并且包括沟道区，配置在半导体层上并具有与半导体层相同的图案的保护膜 所述保护膜包括激光吸收材料，设置在所述栅极与所述源极和漏极之间的栅极绝缘膜，设置在所述栅极绝缘膜上的栅极电极和布置在所述半导体层内部和所述保护膜内的分离图案， 所述分离图案适于限定半导体层的沟道区。

公开(公告)号：US07495252B2

公开(公告)日：2009-02-24

申请号：US11436531

申请日：2006-05-19

申请人： Taek Ahn ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Taek Ahn ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L27/3274 ,  H01L27/283 ,  H01L51/0017 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.

摘要翻译： 一种防止有机半导体层的表面被损坏并降低截止电流的有机薄膜晶体管，其制造方法和结合有机薄膜晶体管的有机发光器件。 有机薄膜晶体管包括基板，设置在基板上的源极和漏极，与源极和漏极接触的半导体层，并且包括沟道区，配置在半导体层上并具有与半导体层相同的图案的保护膜 所述保护膜包括激光吸收材料，设置在所述栅极与所述源极和漏极之间的栅极绝缘膜，设置在所述栅极绝缘膜上的栅极电极和布置在所述半导体层内部和所述保护膜内的分离图案， 所述分离图案适于限定半导体层的沟道区。

公开(公告)号：US20080182356A1

公开(公告)日：2008-07-31

申请号：US12078171

申请日：2008-03-27

申请人： Min-Chul Suh ,  Jae-Bon Koo ,  Yeon-Gon Mo ,  Taek Ahn ,  Jong-Han Jeong

发明人： Min-Chul Suh ,  Jae-Bon Koo ,  Yeon-Gon Mo ,  Taek Ahn ,  Jong-Han Jeong

IPC分类号： H01L51/40

CPC分类号： H01L51/0541 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/0516

摘要： A thin film transistor, a method of manufacturing the same, and a flat panel display including the thin film transistor. The thin film transistor includes a gate electrode, a source electrode and a drain electrode, a first conductive layer connected to the gate electrode, a second conductive layer connected to one of the source and drain electrodes, an organic semiconductor layer that contacts the source and drain electrodes and an insulating layer insulating the source and drain electrodes and the organic semiconductor layer from the gate electrode, wherein at least one of the gate electrode, the first conductive layer, the source and drain electrodes, and the second conductive layer includes conductive nano-particles and a cured resin. Conductive layers of the thin film transistor can have precise patterns. The thin film transistor can be manufactured by low-cost, low-temperature processes.

摘要翻译： 薄膜晶体管，其制造方法和包括薄膜晶体管的平板显示器。 薄膜晶体管包括栅电极，源电极和漏电极，连接到栅电极的第一导电层，连接到源极和漏极之一的第二导电层，接触源极的有机半导体层和 漏电极和绝缘层，其将源极和漏极以及有机半导体层与栅电极绝缘，其中栅电极，第一导电层，源极和漏极以及第二导电层中的至少一个包括导电纳米 颗粒和固化树脂。 薄膜晶体管的导电层可以具有精确的图案。 薄膜晶体管可以通过低成本，低温工艺制造。

公开(公告)号：US20070111371A1

公开(公告)日：2007-05-17

申请号：US11595568

申请日：2006-11-10

申请人： Taek Ahn ,  Min-Chul Suh

发明人： Taek Ahn ,  Min-Chul Suh

IPC分类号： H01L51/40

CPC分类号： H01L51/0545 ,  H01L51/0005 ,  H01L51/0021 ,  H01L51/0097

摘要： An organic thin film transistor (OTFT) and a method of fabricating the same are provided in which an organic layer and metal interconnections are formed to have certain linewidths and shapes such that a degradation of device characteristics is prevented. The method includes providing a substrate, forming a gate electrode on the substrate, forming a gate insulating layer on the gate electrode, forming source and drain electrodes on the gate insulating layer, and forming a semiconductor layer on the source and drain electrodes. The gate electrode is formed by an inkjet printing method and ablated by a laser.

摘要翻译： 提供有机薄膜晶体管（OTFT）及其制造方法，其中有机层和金属互连形成为具有一定的线宽和形状，从而防止器件特性的劣化。 该方法包括提供衬底，在衬底上形成栅电极，在栅电极上形成栅极绝缘层，在栅极绝缘层上形成源电极和漏电极，以及在源极和漏极上形成半导体层。 栅电极通过喷墨印刷法形成，并通过激光烧蚀。

公开(公告)号：US20070090352A1

公开(公告)日：2007-04-26

申请号：US11582534

申请日：2006-10-18

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park ,  Seok-Jong Lee ,  Jung-Han Shin

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park ,  Seok-Jong Lee ,  Jung-Han Shin

IPC分类号： H01L29/08

CPC分类号： H01L51/0533 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L51/0545

摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.

摘要翻译： 薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并与源电极和漏电极电连接的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及介于源/漏电极和有机半导体之间并包含具有空穴传输单元的化合物的欧姆接触层。 通过设置欧姆接触层，可以有效地实现源/漏电极和有机半导体层之间的欧姆接触，并且增加源/漏电极和有机半导体层之间的粘合力。 此外，可以使用薄膜晶体管获得具有提高的可靠性的平板显示器。

公开(公告)号：US20060237789A1

公开(公告)日：2006-10-26

申请号：US11403011

申请日：2006-04-13

申请人： Taek Ahn ,  Min-Chul Suh ,  Jae-Bon Koo

发明人： Taek Ahn ,  Min-Chul Suh ,  Jae-Bon Koo

IPC分类号： H01L27/12

CPC分类号： H01L51/0545 ,  H01L27/1214 ,  H01L27/283 ,  H01L29/78651 ,  H01L29/78681 ,  H01L51/0017

摘要： A Thin Film Transistor (TFT) that can reduce leakage current and can prevent crosstalk between adjacent TFTs includes: a substrate; a gate electrode disposed on the substrate; a source electrode and a drain electrode separated from each other and insulated from the gate electrode; and a semiconductor layer which is insulated from the gate electrode, contacts each of the source and drain electrodes, and has grooves that separate at least a region of the semiconductor layer between the source and drain electrodes from the adjacent TFT. Each groove passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes, and a projection image generated when each groove that passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes is projected onto the source and drain electrodes covers the source and drain electrodes except for a portion of the source electrode that faces the drain electrode and a portion of the drain electrode that faces the source electrode.