公开(公告)号：US07078738B2

公开(公告)日：2006-07-18

申请号：US10775324

申请日：2004-02-11

申请人： Mitsuhiro Nawashiro ,  Satoshi Inagaki ,  Yasumasa Tatewaki ,  Takahide Oshio ,  Hisao Yamaguchi

发明人： Mitsuhiro Nawashiro ,  Satoshi Inagaki ,  Yasumasa Tatewaki ,  Takahide Oshio ,  Hisao Yamaguchi

IPC分类号： H01L31/109

CPC分类号： H01L25/0753 ,  H01L25/167 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A light-emitting device has two light-emitting element. In a substrate portion of the light-emitting device having a first internal positive electrode connected to the positive electrode side of a first light-emitting element, a first internal negative electrode connected to the negative electrode side of the first light-emitting element, a second internal positive electrode connected to the positive electrode side of a second light-emitting element, and a second internal negative electrode connected to the negative electrode side of the second light-emitting element, these electrodes are provided so that homopolar electrodes are disposed diagonally.

摘要翻译： 发光装置具有两个发光元件。 在具有与第一发光元件的正极侧连接的第一内部正极的发光装置的基板部分中，与第一发光元件的负极侧连接的第一内部负极， 连接到第二发光元件的正极侧的第二内部正电极和与第二发光元件的负极侧连接的第二内部负极，这些电极被设置为使得对角线电极被设置。

公开(公告)号：US06727518B2

公开(公告)日：2004-04-27

申请号：US09934683

申请日：2001-08-23

申请人： Toshiya Uemura ,  Takahide Oshio

发明人： Toshiya Uemura ,  Takahide Oshio

IPC分类号： H01L2715

CPC分类号： H01L33/46 ,  H01L33/32

摘要： A wafer comprising a semiconductor layer formed on a substrate is diced on the back surface of the substrate to a depth of about ¾ thickness of the substrate. Thus a separation groove 21 is formed in a direction of a dicing line. A groove 22 is formed at the portion of the semiconductor layer corresponding to the groove 21. The groove 22 reaches the substrate. The back surface 11b of the substrate 11 is polished until the substrate become a lamella having only a trace of the groove 22. A metal layer 10 is formed by depositing aluminum (Al) so as to cover the entire back 11b of the substrate 11, and a groove 23 formed at the portion of the metal layer corresponding to the groove 21. An adhesive sheet 24 is adhered on an electrode pad 20. A scribe line is formed by scribing the metal layer 10 along the groove 23. The wafer is loaded by a roller in a breaking process. Accordingly, a wafer having the metal layer on the back surface 11b of the substrate can be obtained. Light transmitted to the substrate 11 is reflected by the metal layer, resulting in improving effectivity of ejecting light from the electrode 18A and 18B. And a luminous intensity of the device can be also improved.

摘要翻译： 包括形成在基板上的半导体层的晶片在基板的背面被切割成基板厚度约为厚度的深度。 因此，在切割线的方向上形成分隔槽21。 在对应于凹槽21的半导体层的部分处形成凹槽22.凹槽22到达衬底。 抛光基板11的背面11b直到基板变成仅具有凹槽22的痕迹的薄片。通过沉积铝（Al）以覆盖基板11的整个后部11b形成金属层10， 以及形成在与槽21对应的金属层的部分处的槽23.粘合片24粘附在电极焊盘20上。通过沿着凹槽23划刻金属层10来形成划线。将晶片加载 在一个破碎的过程中由一个滚筒。 因此，可以获得在基板的背面11b上具有金属层的晶片。 透射到基板11的光被金属层反射，从而提高了从电极18A和18B喷射光的有效性。 并且还可以提高装置的发光强度。

公开(公告)号：US5652438A

公开(公告)日：1997-07-29

申请号：US504340

申请日：1995-07-19

申请人： Michinari Sassa ,  Makoto Tamaki ,  Masayoshi Koike ,  Naoki Shibata ,  Masami Yamada ,  Takahide Oshio

发明人： Michinari Sassa ,  Makoto Tamaki ,  Masayoshi Koike ,  Naoki Shibata ,  Masami Yamada ,  Takahide Oshio

IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62 ,  H01L33/00

CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/325 ,  H01L2224/48463 ,  H01L33/382 ,  H01L33/40

摘要： A light-emitting semiconductor device (10) consecutively has a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.X2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN buffer layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Lead lines (21, 22) are connected with the electrodes (7, 8) by a wedge bonding method to desirably reduce the surface area of the electrodes on the light-emitting side of the device upon which the electrodes are situated to thereby increase light emission from the device.

摘要翻译： 发光半导体器件（10）连续地具有蓝宝石衬底（1），AlN缓冲层（2），高载流子（n型）掺杂的硅（Si）掺杂的GaN n +层（3）， 锌（Zn）和Si掺杂（Al x Ga 1-x 1）y 1 In 1-y 1 N发射层（5）的Si掺杂（AlX2Ga1-x2）y2In1-y2N n +层（4） 和掺杂Mg的（Alx2Ga1-x2）y2In1-y2N p层（6）。 AlN缓冲层（2）具有500厚度。 GaN n +层（3）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。 n +层（4）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。 发射层（5）厚约0.5μm。 p层6的厚度约为1.0μm，空穴浓度为2×10 17 / cm 3。 镍电极（7,8）分别连接到p层（6）和n +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 引线（21,22）通过楔形接合方法与电极（7,8）连接，以期望减少电极位于其上的器件的发光侧的电极的表面积，从而增加光 从设备发射。

公开(公告)号：US06570186B1

公开(公告)日：2003-05-27

申请号：US09568380

申请日：2000-05-10

申请人： Toshiya Uemura ,  Takahide Oshio

发明人： Toshiya Uemura ,  Takahide Oshio

IPC分类号： H01L2715

CPC分类号： H01L33/46 ,  H01L33/32

摘要： A wafer comprising a semiconductor layer formed on a substrate is diced on the back surface of the substrate to a depth of about ¾ thickness of the substrate. Thus a separation groove 21 is formed in a direction of a dicing line. A groove 22 is formed at the portion of the semiconductor layer corresponding to the groove 21. The groove 22 reaches the substrate. The back surface 11b of the substrate 11 is polished until the substrate become a lamella having only a trace of the groove 22. A metal layer 10 is formed by depositing aluminum (Al) so as to cover the entire back 11b of the substrate 11, and a groove 23 formed at the portion of the metal layer corresponding to the groove 21. An adhesive sheet 24 is adhered on an electrode pad 20. A scribe line is formed by scribing the metal layer 10 along the groove 23. The wafer is loaded by a roller in a breaking process. Accordingly, a wafer having the metal layer on the back surface 11b of the substrate can be obtained. Light transmitted to the substrate 11 is reflected by the metal layer, resulting in improving effectivity of ejecting light from the electrode 18A and 18B. And a luminous intensity of the device can be also improved.

公开(公告)号：US06335212B1

公开(公告)日：2002-01-01

申请号：US09599556

申请日：2000-06-23

申请人： Toshiya Uemura ,  Takahide Oshio

发明人： Toshiya Uemura ,  Takahide Oshio

IPC分类号： H01L2100

CPC分类号： H01L33/52 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A device and a method for fabricating said device provides a semiconductor light-emitting element having an electrode and a protective film layer that is sealed with an insulating resin, which is hardened at high temperature. After completion of the hardening process, the semiconductor light-emitting element is heat treated in an atmosphere of normal or higher humidity. Preferably, the heat treatment is performed at a temperature of 60° C. or higher in an atmosphere having an absolute humidity of 10 KPa or higher. When the heat treatment is performed at or above 10 KPa, the heat treatment can be completed within a shorter timeframe in comparison to such a device heat treated at an absolute humidity of less than 10 kPa.

摘要翻译： 一种用于制造所述器件的器件和方法提供了一种具有电极和保护膜层的半导体发光元件，该绝缘树脂在高温下被硬化。 在硬化处理完成之后，半导体发光元件在正常或较高湿度的气氛中进行热处理。 优选地，在绝对湿度为10KPa以上的气氛中，在60℃以上的温度下进行热处理。 当在10KPa以上进行热处理时，与在绝对湿度小于10kPa下热处理的装置相比，能够在更短的时间内完成热处理。