利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

80 条记录 (耗时 0.042 秒)

    Light-emitting semiconductor device using group III nitride compound
    1.
    发明授权
    Light-emitting semiconductor device using group III nitride compound 失效
    使用III族氮化物化合物的发光半导体器件

    公开(公告)号：US5652438A

    公开(公告)日：1997-07-29

    申请号：US504340

    申请日：1995-07-19

    申请人： Michinari Sassa ,  Makoto Tamaki ,  Masayoshi Koike ,  Naoki Shibata ,  Masami Yamada ,  Takahide Oshio

    发明人： Michinari Sassa ,  Makoto Tamaki ,  Masayoshi Koike ,  Naoki Shibata ,  Masami Yamada ,  Takahide Oshio

    IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62 ,  H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/325 ,  H01L2224/48463 ,  H01L33/382 ,  H01L33/40

    摘要： A light-emitting semiconductor device (10) consecutively has a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.X2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN buffer layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Lead lines (21, 22) are connected with the electrodes (7, 8) by a wedge bonding method to desirably reduce the surface area of the electrodes on the light-emitting side of the device upon which the electrodes are situated to thereby increase light emission from the device.

    摘要翻译： 发光半导体器件（10）连续地具有蓝宝石衬底（1），AlN缓冲层（2），高载流子（n型）掺杂的硅（Si）掺杂的GaN n +层（3）， 锌（Zn）和Si掺杂（Al x Ga 1-x 1）y 1 In 1-y 1 N发射层（5）的Si掺杂（AlX2Ga1-x2）y2In1-y2N n +层（4） 和掺杂Mg的（Alx2Ga1-x2）y2In1-y2N p层（6）。 AlN缓冲层（2）具有500厚度。 GaN n +层（3）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。 n +层（4）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。 发射层（5）厚约0.5μm。 p层6的厚度约为1.0μm，空穴浓度为2×10 17 / cm 3。 镍电极（7,8）分别连接到p层（6）和n +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 引线（21,22）通过楔形接合方法与电极（7,8）连接，以期望减少电极位于其上的器件的发光侧的电极的表面积，从而增加光 从设备发射。

    Image processing apparatus, image processing method, and computer-readable storage medium for computer program
    4.
    发明授权
    Image processing apparatus, image processing method, and computer-readable storage medium for computer program 有权
    图像处理装置，图像处理方法以及用于计算机程序的计算机可读存储介质

    公开(公告)号：US08102544B2

    公开(公告)日：2012-01-24

    申请号：US12485327

    申请日：2009-06-16

    申请人： Tomonari Yoshimura ,  Atsushi Ohshima ,  Masami Yamada

    发明人： Tomonari Yoshimura ,  Atsushi Ohshima ,  Masami Yamada

    IPC分类号： G06K15/02 ,  G06K9/20 ,  G06K7/10 ,  G06F3/12 ,  H04N1/40 ,  H04N5/445

    CPC分类号： G06F17/30879

    摘要： A terminal is provided with an image obtaining portion that obtains an image including a code representing a location of a web page, a web page obtaining portion that obtains the web page based on the code included in the image, a calculation portion that compares the image except the code with the web page to calculate a degree of relevance between the image except the code and the web page, and a print controller that issues a command to print the image with the code excluded if the degree of relevance is lower than a predetermined threshold, and to print the image without excluding the code if the degree of relevance is equal to or greater than the predetermined threshold.

    摘要翻译： 终端设置有图像获取部分，其获得包括表示网页位置的代码的图像，基于包括在图像中的代码获取网页的网页获取部分，比较图像的计算部分 除了具有网页的代码以计算除了代码和网页之外的图像之间的相关度的程度;以及打印控制器，如果相关程度低于预定的程度，则发出打印图像的代码，排除代码 阈值，并且如果相关程度等于或大于预定阈值，则打印图像而不排除代码。

    Liquid developer monitoring device, liquid developer controlling system, and image forming apparatus using same
    8.
    发明授权
    Liquid developer monitoring device, liquid developer controlling system, and image forming apparatus using same 失效
    液体显影剂监测装置，液体显影剂控制系统和使用它的成像装置

    公开(公告)号：US5724629A

    公开(公告)日：1998-03-03

    申请号：US671880

    申请日：1996-06-28

    申请人： Shuji Iino ,  Toshimitsu Fujiwara ,  Hidetoshi Miyamoto ,  Masami Yamada

    发明人： Shuji Iino ,  Toshimitsu Fujiwara ,  Hidetoshi Miyamoto ,  Masami Yamada

    IPC分类号： G03G15/11 ,  G03G15/10

    CPC分类号： G03G15/105

    摘要： This invention relates to a liquid developer monitoring device comprising a first electrode which contacts with a liquid developer comprising a liquid medium and electrically charged toner particles dispersed therein, a second electrode being either a developing roller or a separate roller which provides a fresh surface and immerses said surface in the liquid developer, an electric power source which applies a bias voltage between said first and second electrodes so as to deposit the toner particles on the second electrode, and a sensor which measures magnitude of current flowing between said first and second electrodes during the deposition of the toner particles. A cleaning device removes the deposited toner on the second electrode. The sensor includes an electric coil, a magnet inserted in the coil and a Hall element.

    摘要翻译： 液体显影剂监测装置技术领域本发明涉及一种液体显影剂监测装置，其包括与包含液体介质的液体显影剂接触的第一电极和分散在其中的带电荷的调色剂颗粒，第二电极是提供新鲜表面的显影辊或单独的辊， 所述液体显影剂中的所述表面，在所述第一和第二电极之间施加偏置电压以将调色剂颗粒沉积在第二电极上的电源，以及测量在第一和第二电极之间流动的电流的大小的传感器 调色剂颗粒的沉积。 清洁装置去除第二电极上沉积的调色剂。 传感器包括电线圈，插入线圈中的磁体和霍尔元件。

    Photoemitter electron tube and photodetector
    9.
    发明授权
    Photoemitter electron tube and photodetector 失效
    Photoemitter电子管和光电探测器

    公开(公告)号：US5591986A

    公开(公告)日：1997-01-07

    申请号：US299664

    申请日：1994-09-02

    申请人： Minoru Niigaki ,  Toru Hirohata ,  Tuneo Ihara ,  Masami Yamada

    发明人： Minoru Niigaki ,  Toru Hirohata ,  Tuneo Ihara ,  Masami Yamada

    IPC分类号： H01J1/34 ,  H01L27/14 ,  H01J31/00 ,  H01L29/49

    CPC分类号： H01J1/34 ,  H01J2201/3423

    摘要： The present invention provides a photoemission device excellent in quantum efficiency of photoelectric conversion, a high-sensitive electron tube employing it, and a high-sensitive photodetecting apparatus. A photoemission device of the present invention is arranged to have a photon absorbing layer for absorbing incident photons to excite photoelectrons, an insulator layer layered on one surface of the photon absorbing layer, a lead electrode layered on the insulator layer, and a contact formed on the other surface of the photon absorbing layer to apply a predetermined polarity voltage between the lead electrode and the other surface of the photon absorbing layer, whereby the photoelectrons excited by the incident photons entering the photon absorbing layer and moving toward the one side are made to be emitted by an electric field formed between the lead electrode and the one surface by the predetermined polarity voltage.

    摘要翻译： 本发明提供了一种光电转换量子效率优异的使用它的高灵敏度电子管和高灵敏度光电检测装置的光电发射装置。 本发明的发光装置被配置为具有用于吸收入射光子以激发光电子的光子吸收层，层叠在光子吸收层的一个表面上的绝缘体层，层叠在绝缘体层上的引线电极和形成在 光子吸收层的另一个表面，以在引线电极和光子吸收层的另一个表面之间施加预定的极性电压，由此进入光子吸收层并朝向一侧移动的入射光子激发的光电子被制成 由形成在引线电极和一个表面之间的电场发射预定的极性电压。

    Photocathode capable of detecting position of incident light in one or two dimensions, phototube, and photodetecting apparatus containing same
    10.
    发明授权
    Photocathode capable of detecting position of incident light in one or two dimensions, phototube, and photodetecting apparatus containing same 失效
    能够检测一维或二维入射光的位置的光电阴极，光电管和含有它的光电检测装置

    公开(公告)号：US5471051A

    公开(公告)日：1995-11-28

    申请号：US251928

    申请日：1994-06-01

    申请人： Minoru Niigaki ,  Katsuyuki Kinoshita ,  Toru Hirohata ,  Tuneo Ihara ,  Masami Yamada ,  Norio Asakura ,  Yasuharu Negi ,  Tomoko Suzuki

    发明人： Minoru Niigaki ,  Katsuyuki Kinoshita ,  Toru Hirohata ,  Tuneo Ihara ,  Masami Yamada ,  Norio Asakura ,  Yasuharu Negi ,  Tomoko Suzuki

    IPC分类号： H01J1/34 ,  H01J43/04 ,  H01J40/14

    CPC分类号： H01J1/34 ,  H01J43/045

    摘要： There is disclosed a photocathode comprising:a photoelectric conversion layer for internally exciting photoelectrons in response to incident photons; a semiconductor layer having a photoelectron emission surface for emitting the photoelectrons generated and accelerated in the photoelectric conversion layer from the photoelectron emission surface; an upper surface electrode formed on the photoelectron emission surface of the semiconductor layer; and a lower surface electrode formed on the semiconductor layer so that the lower surface electrode is opposite to the upper surface electrode through the semiconductor layer, the upper surface electrode being divided so as to provide a plurality of pixel electrodes which are electrically insulated from each other, the plurality of pixel electrodes being respectively connected to a plurarity of bias application wires.

    摘要翻译： 公开了一种光电阴极，包括：用于响应于入射光子而内部激发光电子的光电转换层; 具有光电子发射表面的半导体层，用于发射从光电子发射表面在光电转换层中产生和加速的光电子; 形成在所述半导体层的光电子发射表面上的上表面电极; 以及形成在半导体层上的下表面电极，使得下表面电极通过半导体层与上表面电极相对，上表面电极被分割以提供彼此电绝缘的多个像素电极 多个像素电极分别连接到多个偏置施加电线。