公开(公告)号：US08476701B2

公开(公告)日：2013-07-02

申请号：US13067243

申请日：2011-05-18

申请人： Takehiro Ueda ,  Hiroshi Kawaguchi

发明人： Takehiro Ueda ,  Hiroshi Kawaguchi

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/78 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/665 ,  H01L29/66795 ,  H01L29/7851

摘要： A semiconductor device includes a transistor that has a trench formed in an element forming region of a substrate, a gate insulating film formed on side faces and a bottom face of the trench, a gate electrode formed on the gate insulating film so as to bury the trench, a source region formed on one side in the gate longitude direction, which is formed on the surface of the substrate, and a drain region formed on the other side in the gate longitude direction. Here, the gate electrode is formed so as to be exposed also on the substrate outside the trench, and the gate electrode is disposed so as to cover upper portions of both ends of the trench and so as to form at least one concave portion having a depth reaching the substrate in a center portion.

摘要翻译： 半导体器件包括在衬底的元件形成区域中形成有沟槽的晶体管，形成在沟槽的侧面和底面上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，以便掩埋 沟槽，形成在基板的表面上的在栅极经度方向的一侧上形成的源极区域和形成在栅极经度方向上的另一侧的漏极区域。 这里，栅极形成为在沟槽外部的基板上露出，并且栅电极被设置为覆盖沟槽的两端的上部，并且形成至少一个凹部，该凹部具有 深度到达中心部分的基板。

公开(公告)号：US08372730B2

公开(公告)日：2013-02-12

申请号：US13167429

申请日：2011-06-23

申请人： Takehiro Ueda

发明人： Takehiro Ueda

IPC分类号： H01L21/479

CPC分类号： G11C17/16 ,  G11C17/18 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electric fuse includes: a first interconnect and a second interconnect, formed on a semiconductor substrate; a fuse link, formed on the semiconductor substrate and provided so that an end thereof is coupled to the first interconnect, the fuse link being capable of electrically cutting the second interconnect from the first interconnect; and an electric current inflow terminal and an electric current drain terminal for cutting the fuse link, formed on the semiconductor substrate and provided in one end and another end of the first interconnect, respectively.

摘要翻译： 电熔丝包括：形成在半导体衬底上的第一互连和第二互连; 熔丝连接件，形成在半导体衬底上并且设置成使其一端连接到第一互连，熔丝链可以从第一互连电切割第二互连; 以及形成在半导体基板上并分别设置在第一互连的一端和另一端的熔断体的电流流入端子和漏电端子。

公开(公告)号：US20110267136A1

公开(公告)日：2011-11-03

申请号：US13178953

申请日：2011-07-08

申请人： Takehiro UEDA

发明人： Takehiro UEDA

IPC分类号： H01L23/525 ,  H01H37/76

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of cutting an electrical fuse including a first conductor and a second conductor, the first conductor including a first cutting target region, the second conductor branched from the first conductor and connected to the first conductor and including a second cutting target region, which are formed on a semiconductor substrate, the method includes flowing a current in the first conductor, causing material of the first conductor to flow outward near a coupling portion connecting the first conductor to the second conductor, and cutting the first cutting target region and the second cutting target region.

摘要翻译： 一种切割包括第一导体和第二导体的电熔丝的方法，所述第一导体包括第一切割目标区域，所述第二导体从所述第一导体分支并连接到所述第一导体并且包括第二切割目标区域，所述第二切割目标区域是 形成在半导体衬底上，该方法包括使第一导体中的电流流动，使得第一导体的材料在连接第一导体与第二导体的耦合部分附近向外流动，以及切割第一切割目标区域和第二切割 目标区域。

公开(公告)号：US20110266653A1

公开(公告)日：2011-11-03

申请号：US13180050

申请日：2011-07-11

申请人： Takehiro UEDA

发明人： Takehiro UEDA

IPC分类号： H01L23/525

CPC分类号： H01L23/5256 ,  H01L23/345 ,  H01L23/525 ,  H01L23/528 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： A portion-to-be-melted of a fuse is surrounded by plates, so that heat to be generated in a meltdown portion of the fuse under current supply can be confined or accumulated in the vicinity of the meltdown portion of the fuse. This makes it possible to facilitate meltdown of the fuse. The meltdown portion of the fuse in a folded form, rather than in a single here a fuse composed of a straight-line form, is more successful in readily concentrating the heat generated in the fuse under current supply into the meltdown portion, and in further facilitating the meltdown of the fuse.

摘要翻译： 保险丝的熔融部分被板包围，使得在电流供应下在熔断器的熔化部分产生的热可以被限制或积聚在熔断器的熔化部分附近。 这使得可以促进保险丝熔断。 熔断器的熔化部分是折叠形式，而不是在这里单个由直线形式组成的保险丝，更容易将电流供应中产生的保险丝中的热量集中到熔化部分中，而且在另外 有助于保险丝熔断。

公开(公告)号：US20100159673A1

公开(公告)日：2010-06-24

申请号：US12715625

申请日：2010-03-02

申请人： Takehiro Ueda

发明人： Takehiro Ueda

IPC分类号： H01L21/479

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate, and an electrical fuse including a first conductor including a first cutting target region, and a second conductor branched from the first conductor and connected to the first conductor and including a second cutting target region, which are formed on the semiconductor substrate, wherein a flowing-out region is formed of the first conductor flowing toward outside between the first cutting target region and the second cutting target region in a condition of cutting the electrical fuse.

摘要翻译： 一种半导体器件，包括：半导体衬底，以及一个电熔丝，包括第一导体包括第一切割对象区域，并且从所述第一导体分支并连接到所述第一导体的第二导体，并且包括第二切割靶区域，其形成在 半导体基板，其特征在于，流出区域在切割电熔丝的状态朝向所述第一切削对象区域和第二切割靶区域之间外部流动的第一导体形成。

公开(公告)号：US07728407B2

公开(公告)日：2010-06-01

申请号：US11749241

申请日：2007-05-16

申请人： Takehiro Ueda

发明人： Takehiro Ueda

IPC分类号： H01L29/00

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate, and an electrical fuse including a first conductor including a first cutting target region, and a second conductor branched from the first conductor and connected to the first conductor and including a second cutting target region, which are formed on the semiconductor substrate, wherein a flowing-out region is formed of the first conductor flowing toward outside between the first cutting target region and the second cutting target region in a condition of cutting the electrical fuse.

摘要翻译： 半导体器件包括半导体衬底和电熔丝，电熔丝包括第一导体和第二导体，第一导体包括第一切割目标区域和从第一导体分支并连接到第一导体并且包括第二切割目标区域的第二导体， 半导体衬底，其中在切断电熔丝的状态下，第一导体在第一切割目标区域和第二切割目标区域之间朝向外部流动形成流出区域。

公开(公告)号：US07679871B2

公开(公告)日：2010-03-16

申请号：US11806553

申请日：2007-06-01

申请人： Norio Okada ,  Takehiro Ueda

发明人： Norio Okada ,  Takehiro Ueda

IPC分类号： H01L29/00

CPC分类号： G11C17/18 ,  H01L23/5256 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate, a fuse which comprises a conductive material and is formed on a semiconductor substrate, a contacting target conductor region which is placed around the fuse on the semiconductor substrate and formed so as to make electrical contact with the fuse through the conductive material constituting the fuse when a process for cutting the fuse is carried out, and a determination unit which detects whether or not the fuse is electrically disconnected, and detects whether or not the contacting target conductor region and the fuse are electrically connected, and determines that the fuse is in a cut state when electrical disconnection of said fuse is detected or electrical connection between said contacting target conductor region and said fuse is detected.

摘要翻译： 半导体器件包括半导体衬底，包括导电材料并形成在半导体衬底上的熔丝，接触目标导体区域，其被布置在半导体衬底上的保险丝周围并且形成为与保险丝电接触 当执行用于切割熔丝的处理时构成熔丝的导电材料，以及检测熔丝是否断电的判断单元，并检测接触目标导体区域和熔丝是否电连接，以及 当检测到所述保险丝的断电或检测到所述接触目标导体区域和所述保险丝之间的电连接时，确定所述保险丝处于切断状态。

公开(公告)号：US20100037454A1

公开(公告)日：2010-02-18

申请号：US12603936

申请日：2009-10-22

申请人： Takehiro UEDA

发明人： Takehiro UEDA

IPC分类号： H01H69/02

CPC分类号： H01L23/5256 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L27/0288 ,  H01L2924/0002 ,  Y10T29/49107 ,  H01L2924/00

摘要： A semiconductor device includes an electric fuse formed on a semiconductor substrate and composed of an electric conductor. The electric fuse includes an upper layer interconnect, a via coupled to the upper interconnect and a lower layer interconnect coupled to the via, which are formed in different layers, respectively, in a condition before cutting the electric fuse, and wherein the electric fuse includes a flowing-out region formed of the electric conductor being flowed toward outside from the second interconnect and a void region formed between the first interconnect and the via or in the via, in a condition after cutting the electric fuse.

摘要翻译： 半导体器件包括形成在半导体衬底上并由导电体组成的电熔丝。 电熔丝包括上层互连，连接到上部互连的通孔和耦合到通孔的下层互连，其在切割电熔丝之前分别形成在不同的层中，并且其中电熔丝包括 在切断电熔丝之后的状态下，由导体形成的流出区域从第二互连件向外侧流动，形成在第一布线和通孔之间或通孔中的空隙区域。

公开(公告)号：US20080142160A1

公开(公告)日：2008-06-19

申请号：US11954832

申请日：2007-12-12

申请人： Takehiro UEDA ,  Yoshiyuki Kobayashi ,  Kaoru Oohashi

发明人： Takehiro UEDA ,  Yoshiyuki Kobayashi ,  Kaoru Oohashi

IPC分类号： H01L21/3065 ,  B21D53/00 ,  C23C16/40 ,  C23C16/458

CPC分类号： B32B38/08 ,  B32B38/10 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68757 ,  Y10T29/49359 ,  Y10T29/494 ,  Y10T29/4998 ,  Y10T29/49982 ,  Y10T279/23

摘要： A substrate mounting table includes a plate shaped member provided with a mounting surface for mounting a substrate thereon, a plurality of gas injection openings opened on the mounting surface to supply a gas toward the mounting surface, and a gas supply channel for supplying the gas through the gas injection openings; and a thermally sprayed ceramic layer covering the mounting surface. At least inner wall portions of the gas supply channel are formed in curved surface shapes, the inner wall portions facing the gas injection openings.

摘要翻译： 基板安装台包括：板状部件，其设置有用于在其上安装基板的安装表面;多个气体注入开口，其在安装面上开口以朝向安装表面供应气体;以及气体供应通道，用于通过 气体注入口; 以及覆盖安装表面的热喷涂陶瓷层。 气体供给通道的至少内壁部分形成为曲面形状，内壁部分面对气体注入开口。

公开(公告)号：US20070262357A1

公开(公告)日：2007-11-15

申请号：US11798221

申请日：2007-05-11

申请人： Takehiro Ueda

发明人： Takehiro Ueda

IPC分类号： H01L29/768 ,  H01L27/148

CPC分类号： G11C17/16 ,  G11C17/18 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electric fuse includes: a first interconnect and a second interconnect, formed on a semiconductor substrate; a fuse link, formed on the semiconductor substrate and provided so that an end thereof is coupled to the first interconnect, the fuse link being capable of electrically cutting the second interconnect from the first interconnect; and an electric current inflow terminal and an electric current drain terminal for cutting the fuse link, formed on the semiconductor substrate and provided in one end and another end of the first interconnect, respectively.

摘要翻译： 电熔丝包括：形成在半导体衬底上的第一互连和第二互连; 熔丝连接件，形成在半导体衬底上并且设置成使其一端连接到第一互连，熔丝链可以从第一互连电切割第二互连; 以及形成在半导体基板上并分别设置在第一互连的一端和另一端的熔断体的电流流入端子和漏电端子。