Abstract:
In a laminate type ceramic electronic component, when an external electrode is formed directly by plating onto a surface of a component main body, the plating film that is to serve as the external electrode may have a low fixing strength with respect to the component main body. In order to prevent this problem, an external electrode includes a first plating layer composed of a Ni—B plating film and is first formed such that a plating deposition deposited with the exposed ends of respective internal electrodes as starting points is grown on at least an end surface of a component main body. Then, a second plating layer composed of a Ni plating film containing substantially no B is formed on the first plating layer. Preferably, the B content of the Ni—B plating film constituting the first plating layer is about 0.1 wt % to about 6 wt %.
Abstract:
In a laminate type ceramic electronic component, when an external electrode is formed directly by plating onto a surface of a component main body, the plating film that is to serve as the external electrode may have a low fixing strength with respect to the component main body. In order to prevent this problem, an external electrode includes a first plating layer composed of a Ni—B plating film and is first formed such that a plating deposition deposited with the exposed ends of respective internal electrodes as starting points is grown on at least an end surface of a component main body. Then, a second plating layer composed of a Ni plating film containing substantially no B is formed on the first plating layer. Preferably, the B content of the Ni—B plating film constituting the first plating layer is about 0.1 wt % to about 6 wt %.
Abstract:
A dielectric ceramic represented by a general formula: 100BamTiO3+aROn+bMOv+cXOw (where R represents a rare earth element, M represents a predetermined metal element, and n, v, and w represent independently a positive number determined in accordance with the valences of the elements R and M and a sintering aid component X, respectively), and the solid solution regions of the secondary components in the main phase grains are 10% or less (including 0%) on average in terms of a cross-sectional area ratio. The sintering aid component X contains at least Si, and m, a, b, and c satisfy 0.995≦m≦1.030, 0.1≦a≦2.0, 0.1≦b≦3.0, and 0.1≦c≦5.0. In a monolithic ceramic capacitor, dielectric layers are formed from the above-described dielectric ceramic. Consequently, a dielectric ceramic having a good AC voltage characteristic, maintaining a desired large dielectric constant and a good temperature characteristic, exhibiting a small dielectric loss, and being capable of ensuring the reliability and a monolithic ceramic capacitor including the dielectric ceramic are realized.
Abstract:
A dielectric ceramic contains a BaTiO3-based compound as a main ingredient, and can be represented by the general formula: 100AmBO3+aNiO+bROn+cMOv+dMgO+eXOw where R represents a rare earth element such as Dy, M represents a metal element such as Mn, and X represents a sintering aid component containing Si. Ni is uniformly solid-solved in crystal grains, and the solid-solution region of the rare earth element in the crystal grains is an average 10% or less in terms of a cross section ratio. 0.96≦m≦1.030, 0.05≦a≦3, 0.1≦b≦1.5, 0.1≦c≦1.0, 0.1≦d≦1.5, and 0.05≦e≦3.5 are satisfied. A laminated ceramic capacitor has dielectric layers formed of the dielectric ceramic. As a result, a dielectric ceramic, and a laminated ceramic capacitor having excellent AC voltage characteristics, capable of keeping desired dielectric characteristics and excellent temperature characteristics, and having excellent withstand voltage and capable of ensuring reliability can be realized.
Abstract:
A dielectric ceramic material is composed of a perovskite compound represented by ABO3 as a main component. In the case where ABO3 is, for example, BaTiO3, the crystal grains include BaTiO3 crystal grains composed of the main component and, as secondary phases, Mg—Ni—Ti-containing crystalline grains composed of a crystalline oxide containing at least Mg, Ni, and Ti and Ba—Si-containing crystalline grains composed of a crystalline oxide containing at least Ba and Si.
Abstract:
The dielectric ceramic has a composition represented by general formula 100(Ba1-x-ySrxCay)m(Ti1-zZrz)O3+aBaO+bR2O3+cMgO+dMnO+eCuO+fV2O5+gXuOv (where R is a rare-earth element such as La, Ce or Pr; and XuOv is an oxide group including at least Si); and 0≦x≦0.05, 0≦y≦0.08 (preferably 0.02≦y≦0.08), 0≦z≦0.05, 0.990≦m, 100.2≦(100 m+a)≦102, 0.05≦b≦0.5, 0.05≦c≦2, 0.05≦d≦1.3, 0.1≦e≦1.0, 0.02≦f≦0.15, and 0.2≦g≦2. With this composition, a monolithic ceramic capacitor retaining good dielectric characteristics and temperature characteristics even if a high field strength voltage is applied by further thinning the dielectric layers thereof and having excellent reliability achieving good isolating property, dielectric strength, and high-temperature load life is obtained.
Abstract:
A dielectric ceramic material is composed of a perovskite compound represented by ABO3 as a main component. In the case where ABO3 is, for example, BaTiO3, the crystal grains include BaTiO3 crystal grains composed of the main component and, as secondary phases, Mg—Ni—Ti-containing crystalline grains composed of a crystalline oxide containing at least Mg, Ni, and Ti and Ba—Si-containing crystalline grains composed of a crystalline oxide containing at least Ba and Si.
Abstract:
A laminate includes insulating layers laminated to each other. Capacitor conductors are embedded in the laminate and have exposed portions exposed between the insulating layers at respective surfaces of the laminate. The capacitor conductors define a capacitor. External electrodes are provided by plating on the respective surfaces of the laminate so as to directly cover the respective exposed portions. When the laminate is viewed in plan in a y axis direction, the length of each of the exposed portions is approximately 35% to approximately 45% of the length of an outer periphery of the insulating layer.
Abstract:
A dielectric ceramic represented by a general formula: 100BamTiO3+aROn+bMOv+cXOw (where R represents a rare earth element, M represents a predetermined metal element, and n, v, and w represent independently a positive number determined in accordance with the valences of the elements R and M and a sintering aid component X, respectively), and the solid solution regions of the secondary components in the main phase grains are 10% or less (including 0%) on average in terms of a cross-sectional area ratio. The sintering aid component X contains at least Si, and m, a, b, and c satisfy 0.995≦m≦1.030, 0.1≦a≦2.0, 0.1≦b≦3.0, and 0.1≦c≦5.0. In a monolithic ceramic capacitor, dielectric layers are formed from the above-described dielectric ceramic. Consequently, a dielectric ceramic having a good AC voltage characteristic, maintaining a desired large dielectric constant and a good temperature characteristic, exhibiting a small dielectric loss, and being capable of ensuring the reliability and a monolithic ceramic capacitor including the dielectric ceramic are realized.
Abstract translation:由通式:100BamTiO3 + aROn + bMOv + cXOw表示的介电陶瓷(其中R表示稀土元素,M表示预定的金属元素,n,v和w分别独立地表示根据化合价确定的正数) 的元素R和M以及烧结助剂组分X),主相晶粒中的次要组分的固溶区域的横截面积平均为10%以下(包括0%) 比。 烧结助剂组分X至少含有Si,m,a,b和c满足0.995 <= m <= 1.030,0.1 <= a <= 2.0,0.1 <= b <= 3.0,0.1 <= c < = 5.0。 在单片陶瓷电容器中,电介质层由上述介电陶瓷形成。 因此,实现了具有良好的交流电压特性,保持期望的大的介电常数和良好的温度特性,表现出小的介电损耗并且能够确保可靠性并且包括电介质陶瓷的单片陶瓷电容器的电介质陶瓷。
Abstract:
Dielectric ceramic having a high dielectric constant of 5,500 or more and exhibiting good dielectric constant temperature characteristic, and a small, high-capacitance monolithic ceramic capacitor having an electrostatic capacitance temperature characteristic satisfying the X5R characteristic are provided. The dielectric ceramic includes a BaTiO3 based or (Ba,Ca)TiO3 based primary component, a rare-earth element and Cu, and has a structure composed of crystal grains and grain boundaries between the crystal grains. The ratio of the average concentration of the rare-earth element in the grain boundaries to the average concentration of the rare-earth element in the inside of the crystal grains is less than 2, and in a cross section of the dielectric ceramic, the rare-earth element is present in 90% or more of the region of first crystal grains, the number of which is 55% to 85% of the crystal grains, and the rare-earth element is present in less than 10% of the region of second crystal grains, the number of which is 15% to 45% of the crystal grains.