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    Ohmic electrode, its fabricating method and semiconductor device
    2.
    发明授权
    Ohmic electrode, its fabricating method and semiconductor device 失效
    欧姆电极，其制造方法和半导体器件

    公开(公告)号：US6033976A

    公开(公告)日：2000-03-07

    申请号：US852923

    申请日：1997-05-08

    申请人： Masanori Murakami ,  Takeo Oku ,  Akira Otsuki

    发明人： Masanori Murakami ,  Takeo Oku ,  Akira Otsuki

    IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L29/45 ,  H01L21/441

    CPC分类号： H01L21/28575 ,  H01L29/452

    摘要： It is intended to realize an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics. Provided on an n.sup.+ -type GaAs substrate is an ohmic electrode in which an n.sup.++ -type regrown GaAs layer regrown from the n.sup.+ -type GaAs substrate and a NiGe film containing precipitates composed of .alpha.'-AuGa are sequentially stacked. The ohmic electrode may be fabricated by sequentially stacking a Ni film, Au film and Ge film on the n.sup.+ -type GaAs substrate, then patterning these films by, for example, lift-off, and thereafter annealing the structure at a temperature of 400.about.750.degree. C. for several seconds to several minutes.

    摘要翻译： 旨在实现具有实际令人满意的特性的诸如GaAs半导体的III-V化合物半导体的欧姆电极。 在n +型GaAs衬底上提供的是欧姆电极，其中从n +型GaAs衬底重新生长n ++型再生长GaAs层，并且依次层叠含有由α'-AuGa组成的析出物的NiGe膜。 可以通过在n +型GaAs衬底上依次层叠Ni膜，Au膜和Ge膜，然后通过例如剥离来对这些膜进行图案化，然后在400DIFFERENCE的温度下对结构进行退火来制造欧姆电极 750℃，数秒至数分钟。

    Ohmic electrode, its fabrication method and semiconductor device
    4.
    发明授权
    Ohmic electrode, its fabrication method and semiconductor device 失效
    欧姆电极，其制造方法和半导体器件

    公开(公告)号：US5747878A

    公开(公告)日：1998-05-05

    申请号：US822060

    申请日：1997-03-24

    申请人： Masanori Murakami ,  Takeo Oku ,  Akira Otsuki

    发明人： Masanori Murakami ,  Takeo Oku ,  Akira Otsuki

    IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L29/45 ,  H01L23/48 ,  H01L23/52

    CPC分类号： H01L21/28575 ,  H01L29/452

    摘要： An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors is provided to have satisfactory practical characteristics. Provided on an n.sup.+ -type GaAs substrate is an ohmic electrode in which an n.sup.++ -type regrown GaAs layer regrown from the n.sup.+ -type GaAs substrate and a NiGe film containing particles of a precipitate composed of .alpha.'-AuGa are sequentially stacked. The ohmic electrode may be fabricated by sequentially stacking a Ni film, Au film and Ge film on the n.sup.+ -type GaAs substrate, then patterning these films by, for example, lift-off, and thereafter annealing the structure at a temperature of 400.about.750.degree. C. for several seconds to several minutes.

    摘要翻译： 提供了诸如GaAs半导体的III-V化合物半导体的欧姆电极以具有令人满意的实用特性。 在n +型GaAs衬底上提供的是欧姆电极，其中从n +型GaAs衬底重新生长出n ++型再生长GaAs层，并且依次层叠含有由α'-AuGa组成的沉淀颗粒的NiGe膜。 可以通过在n +型GaAs衬底上依次层叠Ni膜，Au膜和Ge膜，然后通过例如剥离来对这些膜进行图案化，然后在400DIFFERENCE的温度下对结构进行退火来制造欧姆电极 750℃，数秒至数分钟。