摘要:
An electromagnetic wave shielding laminate comprising a transparent substrate and an electromagnetic wave shielding film formed thereon, characterized in that the electromagnetic wave shielding film has, sequentially from the substrate side, a first high refractive index layer made of a material having a refractive index of at least 2.0, a first oxide layer containing zinc oxide as the main component, an electroconductive layer containing silver as the main component, and a second high refractive index layer made of a material having a refractive index of at least 2.0.
摘要:
There are provided an antireflector having a simple layer structure, a high visible light transmittance, a low visible light reflectance and an excellent anti-fingerprint property, and a display device having an excellent viewability.An antireflector 1 including a substrate 10 and an antireflection film 20; the antireflection film 20 having a first high refractive index layer 22, a metal layer 24, a second high refractive index layer 26 and a low refractive index layer 28 disposed therein sequentially from a substrate side facing the substrate 1; the first high refractive index layer containing at least one member selected from the group consisting of tin, gallium and cerium in the form of an oxide, and indium in the form of an oxide; the metal layer containing silver and palladium and having a palladium content of from 3 to 20 mass % relative to the total amount of the metal layer (100 mass %); the second high refractive index layer containing at least one member selected from the group consisting of tin, gallium and cerium in the form of an oxide and indium in the form of an oxide. A display device including the antireflector 1 disposed on an observer' side of a display panel.
摘要:
An etching method is carried out by an etching system comprising a gas supply port for supplying an etching gas, a plasma producing vessel defining a plasma producing chamber in which the etching gas is converted into a plasma to produce radicals, a reaction vessel connected to the plasma producing vessel and defining a reaction chamber of a diameter greater than that of the plasma producing chamber, a support table placed in the reaction chamber to support an object to be processed to be etched by the radicals flowing down thereto from the plasma producing chamber, and a vacuum exhaust system for evacuating the reaction chamber. The etching gas is supplied through the etching gas supply port at an etching gas supply rate of 8.4 sccm or above per a substantial volume of one liter of the reaction chamber.
摘要:
A heat processing apparatus for subjecting heat processing to a wafer by heating includes a reaction tube for containing the wafers, a heating element provided around the reaction tube, for heating an inside of the reaction tube, a plurality of heat radiating members provided concentrically around the heating element with an airtight space between the heating element and an innermost one of the heat radiating members and airtight spaces between the heat radiating members, and a pressure-reducing device for reducing the pressure of these airtight spaces. In this heat processing apparatus, the pressures of the airtight spaces are reduced by the pressure-reducing means at least when the temperature of the inside of the reaction tube is increased.
摘要:
The present invention relates to a laminated glass including: a pair of glass substrates facing with each other; a composite film arranged between the pair of glass substrates and including a resin film and an infrared reflective film which includes a high refractive index layer and a low refractive index layer and is formed on a light-incident-side main surface of the resin film; and a pair of adhesive sheets arranged between the pair of glass substrates and the composite film to bond the pair of glass substrates and the composite film, in which the laminated glass has the specific configuration.
摘要:
To provide an electroconductive laminate which has a broad transmission/reflection band and which is excellent in electrical conductivity (electromagnetic wave shielding properties), visible light transmittance, visible light antireflection properties, near infrared shielding properties and moisture resistance, and an electromagnetic wave shield for a plasma display employing such a laminate.An electroconductive laminate 20 comprising a substrate 21 and an electroconductive film 22 formed on the substrate 21, wherein the electroconductive film 22 has a multilayer structure having a high refractive index layer (23a to 23e) and a metal layer (24a to 24d) alternately laminated in this order from the substrate side in a total number of 2n+1 layers (wherein n is an integer of from 1 to 12) and further having a hydrogenated carbon layer 25 at a position most removed from the substrate 21; the refractive index of the high refractive index layer (23a to 23e) is from 1.5 to 2.7; the hydrogenated carbon layer 25 contains carbon atoms and hydrogen atoms; and the content of hydrogen atoms in the hydrogenated carbon layer is from 9 to 50 atomic %.
摘要:
To provide an electroconductive laminate excellent in electrical conductivity and visible light transparency, an electromagnetic wave shielding film for a plasma display, and a protective plate for a plasma display having excellent electromagnetic wave shielding properties, a broad transmission/reflection band and a high visible light transmittance.An electroconductive laminate 10 comprising a substrate 11, and an electroconductive film 12 having a three-layer structure having a first oxide layer 12a, a metal layer 12b and a second oxide layer 12c laminated sequentially from the substrate 11 side, or having a 3×n layer structure (wherein n is an integer of at least 2) having the above three-layer structure repeated, wherein the first oxide layer 12a contains “zinc oxide” and “titanium oxide or niobium oxide”, the metal layer 12b is a layer containing silver, and the second oxide layer 12c contains a mixture of zinc oxide and aluminum oxide, or the like.
摘要:
To provide a reflection mirror having a high reflectance in the visible region and excellent in moisture resistance and sulfur resistance, and its production process. A reflection mirror 10 comprising a substrate 11, a silicon nitride film 14 and a silver film 13 formed between the substrate 11 and the silicon nitride film 14, wherein when 10 ppm of hydrogen sulfide is introduced, and the reflection mirror is left to stand for 100 hours in an atmosphere at a temperature of 50° C. under a relative humidity of 80%, the rate of change of the luminous reflectance (chromaticity Y of the tristimulus value as defined in JIS Z8701 (1982)) after being left to stand is within 10% based on the luminous reflectance before being left to stand. Further, a process for producing a reflection mirror 10, which comprises forming a silver film 13 by a sputtering method and then forming a silicon nitride film 14 by a chemical vapor deposition method.
摘要:
To provide an electroconductive laminate having a broad transmission/reflection band and having excellent electrical conductivity (electromagnetic wave shielding properties), visible light transparency and near infrared shielding properties, and an electromagnetic wave shielding film for a plasma display and a protective plate for a plasma display. An electroconductive laminate 10 comprising a substrate 11 and an electroconductive film 12 formed on the substrate 11, wherein the electroconductive film 12 has a multilayer structure having an oxide layer 12a and a metal layer 12b alternately laminated from the substrate 11 side in a total layer number of (2n+1) (wherein n is an integer of at least 1), the oxide layer 12a contains zinc oxide and a high refractive index metal oxide having a refractive index of at least 2.3 as the main components, and the metal layer 12b contains silver or a silver alloy as the main component; and a protective plate for a plasma display comprising a support, an electroconductive laminate 10 provided on the support, and an electrode electrically in contact with an electroconductive film of the electroconductive laminate 10.
摘要:
At the time of plasma igniting or during plasma processing, only optimizing the distance between electrodes in each case caused a limitation to the prevention of charging damage. To resolve this, a novel plasma processing method employs a plasma processing apparatus which includes an upper electrode to which first high-frequency power is applied, a lower electrode to which second high-frequency power is applied, and a lift mechanism for controlling the spacing between the upper and lower electrodes. The first high-frequency power is applied to the upper electrode to cause plasma igniting. The method is adapted to make the spacing between the upper and lower electrodes larger at least at the time of plasma extinction than during plasma processing of a wafer on the lower electrode.