摘要:
A problem of the present invention is to prevent a base layer beneath the layer to be irradiated with light from deterioration in property and a functional thin film from deterioration in property as the fine patterning of a functional film is performed with light irradiation. Means for solving the problem is a compound obtained by dimerizing with light irradiation a compound (A) containing a group that has photosensitivity and can be photodimerized and a group having lyophilicity and a compound (B) containing a group that has photosensitivity and can be photodimerized and a group having liquid-repellency.
摘要:
A problem of the present invention is to prevent a base layer beneath the layer to be irradiated with light from deterioration in property and a functional thin film from deterioration in property as the fine patterning of a functional film is performed with light irradiation. Means for solving the problem is a compound obtained by dimerizing with light irradiation a compound (A) containing a group that has photosensitivity and can be photodimerized and a group having lyophilicity and a compound (B) containing a group that has photosensitivity and can be photodimerized and a group having liquid-repellency.
摘要:
A problem of the present invention is to provide a device having good characteristics and long life, wherein a functional thin film is formed in a desired region by a coating method; a thin film transistor; a method for producing the device; and a method for producing the thin film transistor. This problem can be solved by a device comprising: a substrate, a first electrode formed on the substrate, a functional thin film formed above the first electrode, and a second electrode disposed above the functional thin film, characterized by further comprising, in a region surrounding the region where the functional thin film is formed, a film containing a compound in which a group containing fluorine and a π-conjugated system are bound together by a cycloalkene structure or a cycloalkane structure.