公开(公告)号：US08702918B2

公开(公告)日：2014-04-22

申请号：US13327689

申请日：2011-12-15

申请人： Alan Ritchie ,  Donny Young ,  Keith A. Miller ,  Muhammad Rasheed ,  Steve Sansoni ,  Uday Pai

发明人： Alan Ritchie ,  Donny Young ,  Keith A. Miller ,  Muhammad Rasheed ,  Steve Sansoni ,  Uday Pai

IPC分类号： C23C14/56

CPC分类号： C23C14/34 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3441

摘要： In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

摘要翻译： 在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得 在支撑构件和密封环以及密封环和目标组件之间形成密封件。

公开(公告)号：US08647485B2

公开(公告)日：2014-02-11

申请号：US13436133

申请日：2012-03-30

申请人： Muhammad Rasheed ,  Donny Young ,  Kirankumar Savandaiah ,  Uday Pai

发明人： Muhammad Rasheed ,  Donny Young ,  Kirankumar Savandaiah ,  Uday Pai

IPC分类号： C25B9/00 ,  C23C14/00 ,  C25B13/00 ,  C25B11/00 ,  C23C16/00 ,  H01L29/12

CPC分类号： H01J37/3411 ,  C23C14/34 ,  C23C14/35 ,  C23C14/564 ,  C23C16/44 ,  H01J19/54 ,  H01J37/32495 ,  Y10T428/12528

摘要： Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.

摘要翻译： 本文公开了用于处理衬底的设备。 在一些实施例中，一种装置包括具有第一端，第二端和设置在第一和第二端之间的一个或多个第一侧壁的第一屏蔽，其中第一端构造成与处理室的第一支撑构件 以将所述第一屏蔽件支撑在使得所述一个或多个第一侧壁围绕所述处理室的第一体积的位置; 以及第二屏蔽，其具有设置在所述第二屏蔽件的第一端和第二端之间并且围绕所述第一屏蔽的第一端，第二端和一个或多个第二侧壁，其中所述第二屏蔽的所述第一端被配置为与 处理室的第二支撑构件以支撑第二屏蔽，使得第二屏蔽件接触第一屏蔽件以在其间形成密封。

公开(公告)号：US20130255576A1

公开(公告)日：2013-10-03

申请号：US13436133

申请日：2012-03-30

申请人： MUHAMMAD RASHEED ,  DONNY YOUNG ,  KIRANKUMAR SAVANDAIAH ,  UDAY PAI

发明人： MUHAMMAD RASHEED ,  DONNY YOUNG ,  KIRANKUMAR SAVANDAIAH ,  UDAY PAI

IPC分类号： C23C16/44 ,  C23C16/50

CPC分类号： H01J37/3411 ,  C23C14/34 ,  C23C14/35 ,  C23C14/564 ,  C23C16/44 ,  H01J19/54 ,  H01J37/32495 ,  Y10T428/12528

摘要： Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.

摘要翻译： 本文公开了用于处理衬底的设备。 在一些实施例中，一种装置包括具有第一端，第二端和设置在第一和第二端之间的一个或多个第一侧壁的第一屏蔽，其中第一端构造成与处理室的第一支撑构件 以将所述第一屏蔽件支撑在使得所述一个或多个第一侧壁围绕所述处理室的第一体积的位置; 以及第二屏蔽，其具有设置在所述第二屏蔽件的第一端和第二端之间并且围绕所述第一屏蔽的第一端，第二端和一个或多个第二侧壁，其中所述第二屏蔽的所述第一端被配置为与 处理室的第二支撑构件以支撑第二屏蔽，使得第二屏蔽件接触第一屏蔽件以在其间形成密封。

公开(公告)号：US09303311B2

公开(公告)日：2016-04-05

申请号：US13435949

申请日：2012-03-30

申请人： Donny Young ,  Alan Ritchie ,  Uday Pai ,  Muhammad Rasheed ,  Keith A. Miller

发明人： Donny Young ,  Alan Ritchie ,  Uday Pai ,  Muhammad Rasheed ,  Keith A. Miller

IPC分类号： C23C14/24 ,  C23C14/34 ,  H01J37/34 ,  C23C14/35

CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/3417 ,  H01J37/3435

摘要： Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.

摘要翻译： 本文提供基板处理系统。 在一些实施例中，衬底处理系统可以包括目标组件，其具有包含待沉积在衬底上的源材料的靶; 设置在所述目标组件周围并且具有大致平行于所述目标组件的背面并相对于所述目标组件的后侧的第一表面的接地组件; 联接到所述接地组件以将所述目标组件支撑在所述接地组件内的支撑构件; 设置在目标组件的背面与接地组件的第一表面之间的一个或多个绝缘体; 以及设置在接地组件的第一表面和目标组件的后侧之间的一个或多个偏置元件，以将目标组件朝向支撑构件偏压。

公开(公告)号：US20110164955A1

公开(公告)日：2011-07-07

申请号：US12835511

申请日：2010-07-13

申请人： John M. White ,  Jeonghoon Oh ,  Tom K. Cho ,  Silja James ,  Uday Pai ,  Oscar Lopez ,  Alexander S. Polyak

发明人： John M. White ,  Jeonghoon Oh ,  Tom K. Cho ,  Silja James ,  Uday Pai ,  Oscar Lopez ,  Alexander S. Polyak

IPC分类号： H01L21/683 ,  F16M11/00

CPC分类号： H01L21/68742

摘要： Embodiments of a method and apparatus for processing large area substrates including a translational wear plate and/or bushing assembly are provided for reducing the stress on a lift pin used to space substrates from a substrate support in a processing or other type of chamber. In another embodiment, an apparatus for processing substrates includes processing chamber comprising a substrate support disposed in a chamber body. A bushing assembly is disposed in the substrate support. A lift pin is disposed through the bushing assembly. A wear plate is provided that is coupled to the chamber body and aligned with the lift pin. The wear plate is movable laterally relative to a centerline of the chamber body to accommodate lateral motion of the lift pin when contacting the wear plate.

摘要翻译： 提供了用于处理包括平移耐磨板和/或衬套组件的大面积衬底的方法和装置的实施例，用于减小用于将衬底从处理或其它类型的室中的衬底支撑件定位的升降销上的应力。 在另一个实施例中，一种用于处理衬底的设备包括处理室，其包括设置在室主体中的衬底支撑件。 衬套组件设置在衬底支撑件中。 提升销设置穿过套管组件。 提供了耐磨板，其连接到腔室主体并与提升销对准。 耐磨板相对于室主体的中心线横向运动，以在接触耐磨板时适应提升销的横向运动。

公开(公告)号：US20130256125A1

公开(公告)日：2013-10-03

申请号：US13435949

申请日：2012-03-30

申请人： DONNY YOUNG ,  ALAN RITCHIE ,  UDAY PAI ,  MUHAMMAD RASHEED ,  KEITH A. MILLER

发明人： DONNY YOUNG ,  ALAN RITCHIE ,  UDAY PAI ,  MUHAMMAD RASHEED ,  KEITH A. MILLER

IPC分类号： C23C14/34 ,  C23C14/35

CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/3417 ,  H01J37/3435

摘要： Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.

摘要翻译： 本文提供基板处理系统。 在一些实施例中，衬底处理系统可以包括目标组件，其具有包含待沉积在衬底上的源材料的靶; 设置在所述目标组件周围并且具有大致平行于所述目标组件的背面并相对于所述目标组件的后侧的第一表面的接地组件; 联接到所述接地组件以将所述目标组件支撑在所述接地组件内的支撑构件; 设置在目标组件的背面与接地组件的第一表面之间的一个或多个绝缘体; 以及设置在接地组件的第一表面和目标组件的后侧之间的一个或多个偏置元件，以将目标组件朝向支撑构件偏压。

公开(公告)号：US20130153412A1

公开(公告)日：2013-06-20

申请号：US13327689

申请日：2011-12-15

申请人： ALAN RITCHIE ,  DONNY YOUNG ,  KEITH A. MILLER ,  MUHAMMAD RASHEED ,  STEVE SANSONI ,  Uday Pai

发明人： ALAN RITCHIE ,  DONNY YOUNG ,  KEITH A. MILLER ,  MUHAMMAD RASHEED ,  STEVE SANSONI ,  Uday Pai

IPC分类号： C23C14/34

CPC分类号： C23C14/34 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3441

摘要： In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

摘要翻译： 在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得 在支撑构件和密封环以及密封环和目标组件之间形成密封件。