公开(公告)号：US08702918B2

公开(公告)日：2014-04-22

申请号：US13327689

申请日：2011-12-15

申请人： Alan Ritchie ,  Donny Young ,  Keith A. Miller ,  Muhammad Rasheed ,  Steve Sansoni ,  Uday Pai

发明人： Alan Ritchie ,  Donny Young ,  Keith A. Miller ,  Muhammad Rasheed ,  Steve Sansoni ,  Uday Pai

IPC分类号： C23C14/56

CPC分类号： C23C14/34 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3441

摘要： In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

摘要翻译： 在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得 在支撑构件和密封环以及密封环和目标组件之间形成密封件。

公开(公告)号：US09303311B2

公开(公告)日：2016-04-05

申请号：US13435949

申请日：2012-03-30

申请人： Donny Young ,  Alan Ritchie ,  Uday Pai ,  Muhammad Rasheed ,  Keith A. Miller

发明人： Donny Young ,  Alan Ritchie ,  Uday Pai ,  Muhammad Rasheed ,  Keith A. Miller

IPC分类号： C23C14/24 ,  C23C14/34 ,  H01J37/34 ,  C23C14/35

CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/3417 ,  H01J37/3435

摘要： Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.

摘要翻译： 本文提供基板处理系统。 在一些实施例中，衬底处理系统可以包括目标组件，其具有包含待沉积在衬底上的源材料的靶; 设置在所述目标组件周围并且具有大致平行于所述目标组件的背面并相对于所述目标组件的后侧的第一表面的接地组件; 联接到所述接地组件以将所述目标组件支撑在所述接地组件内的支撑构件; 设置在目标组件的背面与接地组件的第一表面之间的一个或多个绝缘体; 以及设置在接地组件的第一表面和目标组件的后侧之间的一个或多个偏置元件，以将目标组件朝向支撑构件偏压。

公开(公告)号：US09255322B2

公开(公告)日：2016-02-09

申请号：US13436776

申请日：2012-03-30

申请人： Donny Young ,  Alan Ritchie ,  Muhammad Rasheed ,  Keith A. Miller

发明人： Donny Young ,  Alan Ritchie ,  Muhammad Rasheed ,  Keith A. Miller

IPC分类号： C23C14/34 ,  H01J37/32 ,  C23C14/35 ,  H01J37/34

CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/32577 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3414

摘要： A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.

摘要翻译： 处理系统可以包括具有与其正交的中心轴的目标; 源分布板，其具有与所述靶的背面相对的目标面对侧，其中所述源分配板包括多个第一特征，使得沿着给定第一直径的第一径向RF分配路径的第一距离大约等于第二特征 沿着给定的第一直径的相对的第二径向RF分配路径的距离; 以及与所述源分配板的目标相对侧相对的并且具有围绕所述中心轴线设置并对应于所述多个第一特征的多个第二特征的接地板，其中沿着给定的第二部分的第一径向RF返回路径的第三距离 直径约等于沿着给定的第二直径的相对的第二径向RF返回路径的第四距离。

公开(公告)号：US08647485B2

公开(公告)日：2014-02-11

申请号：US13436133

申请日：2012-03-30

申请人： Muhammad Rasheed ,  Donny Young ,  Kirankumar Savandaiah ,  Uday Pai

发明人： Muhammad Rasheed ,  Donny Young ,  Kirankumar Savandaiah ,  Uday Pai

IPC分类号： C25B9/00 ,  C23C14/00 ,  C25B13/00 ,  C25B11/00 ,  C23C16/00 ,  H01L29/12

CPC分类号： H01J37/3411 ,  C23C14/34 ,  C23C14/35 ,  C23C14/564 ,  C23C16/44 ,  H01J19/54 ,  H01J37/32495 ,  Y10T428/12528

摘要： Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.

摘要翻译： 本文公开了用于处理衬底的设备。 在一些实施例中，一种装置包括具有第一端，第二端和设置在第一和第二端之间的一个或多个第一侧壁的第一屏蔽，其中第一端构造成与处理室的第一支撑构件 以将所述第一屏蔽件支撑在使得所述一个或多个第一侧壁围绕所述处理室的第一体积的位置; 以及第二屏蔽，其具有设置在所述第二屏蔽件的第一端和第二端之间并且围绕所述第一屏蔽的第一端，第二端和一个或多个第二侧壁，其中所述第二屏蔽的所述第一端被配置为与 处理室的第二支撑构件以支撑第二屏蔽，使得第二屏蔽件接触第一屏蔽件以在其间形成密封。

公开(公告)号：US08795488B2

公开(公告)日：2014-08-05

申请号：US13048440

申请日：2011-03-15

申请人： Muhammad Rasheed ,  Lara Hawrylchak ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Alan Ritchie

发明人： Muhammad Rasheed ,  Lara Hawrylchak ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Alan Ritchie

IPC分类号： C23C14/40

CPC分类号： H01J37/3405 ,  H01J37/3411

摘要： In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.

摘要翻译： 在一些实施例中，将RF能量耦合到目标的馈送结构可以包括具有接收RF能量的第一端的主体和与第一端相对的第二端以将RF能量耦合到目标，所述主体还具有中心开口 从第一端至第二端穿过本体; 第一构件，其在所述第一端处联接到所述主体，其中所述第一构件包括限定所述主体并且从所述主体径向向外延伸的第一元件以及设置在所述第一构件中以从RF电源接收RF能量的一个或多个端子 ; 以及耦合到所述主体的第二端以将RF能量分配到所述目标的源分布板，其中所述源分配板包括穿过所述板布置并与所述主体的中心开口对准的孔。

公开(公告)号：US09340866B2

公开(公告)日：2016-05-17

申请号：US13435766

申请日：2012-03-30

申请人： Alan Ritchie ,  Donny Young ,  Wei W. Wang ,  Ananthkrishna Jupudi ,  Thanh X. Nguyen ,  Kirankumar Savandaiah

发明人： Alan Ritchie ,  Donny Young ,  Wei W. Wang ,  Ananthkrishna Jupudi ,  Thanh X. Nguyen ,  Kirankumar Savandaiah

IPC分类号： C23C14/50 ,  C23C14/34 ,  H01J37/32 ,  H01J37/34

CPC分类号： C23C14/34 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32651 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/3405 ,  H01J37/3411

摘要： Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.

摘要翻译： 本文提供了处理基板的设备。 在一些实施例中，用于处理衬底的装置包括衬底支撑件，其可以包括具有用于在其上支撑衬底的表面的电介质构件; 一个或多个第一导电构件，其布置在所述电介质构件下方并且具有邻近所述电介质构件的电介质构件面向表面; 以及设置在所述一个或多个第一导电构件周围并且接触所述一个或多个第一导电构件的第二导电构件，使得通过RF源提供给所述衬底的RF能量通过沿着所述衬底支撑件的所述电介质构件面向表面径向向外径向向外移动 或更多的第一导电构件，并且沿第一导电构件的第一表面布置成大致平行于一个或多个第一导电构件的沿着电介质层面向表面行进的周边边缘表面。

公开(公告)号：US20110209995A1

公开(公告)日：2011-09-01

申请号：US12823893

申请日：2010-06-25

申请人： Muhammad M. Rasheed ,  Ronald D. DeDore ,  Michael S. Cox ,  Keith A. Miller ,  Donny Young ,  John C. Forster ,  Adolph M. Allen ,  Lara Hawrylchak

发明人： Muhammad M. Rasheed ,  Ronald D. DeDore ,  Michael S. Cox ,  Keith A. Miller ,  Donny Young ,  John C. Forster ,  Adolph M. Allen ,  Lara Hawrylchak

IPC分类号： C23C14/34

CPC分类号： H01J37/3444 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3438

摘要： Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state.

摘要翻译： 提供了在支撑在基座上的晶片上进行等离子体处理的装置和方法。 该装置可以包括可以支撑晶片的基座，具有可变电容的可变电容器，附接到可变电容器的电动机，其改变可变电容器的电容;连接到电动机的电动机控制器，其使电动机 旋转，以及连接到基座的可变电容器的输出。 可变电容器的期望状态与过程控制器中的过程配方相关联。 当执行处理配方时，将可变电容器置于所需状态。

公开(公告)号：US09695502B2

公开(公告)日：2017-07-04

申请号：US13435956

申请日：2012-03-30

申请人： Alan Ritchie ,  Donny Young

发明人： Alan Ritchie ,  Donny Young

IPC分类号： C23C14/34 ,  H01J37/32 ,  H01J37/34

CPC分类号： C23C14/34 ,  H01J37/32495 ,  H01J37/32642 ,  H01J37/32651 ,  H01J37/3405

摘要： Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a process kit comprising a shield having one or more sidewalls configured to surround a first volume, the first volume disposed within an inner volume of a process chamber; and a first ring moveable between a first position, wherein the first ring rests on the shield, and a second position, wherein a gap is formed between an outer surface of the first ring and an inner surface of the one or more sidewalls, wherein a width of the gap is less than about two plasma sheath widths for a plasma formed at a frequency of about 40 MHz or higher and at a pressure of about 140 mTorr or lower.

公开(公告)号：US20070170052A1

公开(公告)日：2007-07-26

申请号：US11558929

申请日：2006-11-12

申请人： Alan Ritchie ,  Donny Young ,  Ilyoung (Richard) Hong ,  Kathleen Scheible ,  Umesh Kelkar

发明人： Alan Ritchie ,  Donny Young ,  Ilyoung (Richard) Hong ,  Kathleen Scheible ,  Umesh Kelkar

IPC分类号： C23C14/00

CPC分类号： C23C14/3407 ,  H01J37/32477 ,  H01J37/34 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/3497

摘要： A sputtering chamber has a sputtering target comprising a backing plate and a sputtering plate. The backing plate has a groove. The sputtering plate comprises a cylindrical mesa having a plane, and an annular inclined rim surrounding the cylindrical mesa. In one version, the backing plate comprises a material having a high thermal conductivity and a low electrical resistivity. In another version, the backing plate comprises a backside surface with a single groove or a plurality of grooves.

摘要翻译： 溅射室具有包括背板和溅射板的溅射靶。 背板具有凹槽。 溅射板包括具有平面的圆柱形台面和围绕圆柱形台面的环形倾斜边缘。 在一个版本中，背板包括具有高导热性和低电阻率的材料。 在另一种形式中，背板包括具有单个凹槽或多个凹槽的背面。

公开(公告)号：US20070173059A1

公开(公告)日：2007-07-26

申请号：US11558928

申请日：2006-11-12

申请人： Donny Young ,  Alan Ritchie ,  Ilyoung (Richard) Hong ,  Kathleen Scheible

发明人： Donny Young ,  Alan Ritchie ,  Ilyoung (Richard) Hong ,  Kathleen Scheible

IPC分类号： H01L21/4763

CPC分类号： C23C14/3407 ,  H01J37/32477 ,  H01J37/34 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/3497

摘要： A process kit for a sputtering chamber comprises a deposition ring, cover ring, and a shield assembly, for placement about a substrate support in a sputtering chamber. The deposition ring comprising an annular band with an inner lip extending transversely, a raised ridge substantially parallel to the substrate support, an inner open channel, and a ledge radially outward of the raised ridge. A cover ring at least partially covers the deposition ring, the cover ring comprising an annular plate comprising a footing which rests on a surface about the substrate support, and downwardly extending first and second cylindrical walls.

摘要翻译： 用于溅射室的处理套件包括沉积环，盖环和屏蔽组件，用于放置在溅射室中的衬底支撑件周围。 沉积环包括具有横向延伸的内唇缘的环形带，基本上平行于基底支撑件的凸脊，内开口通道和径向向外突出的凸缘。 盖环至少部分地覆盖沉积环，盖环包括环形板，环形板包括搁置在基板支撑件周围的表面上的基脚以及向下延伸的第一和第二圆柱形壁。