公开(公告)号：US5795701A

公开(公告)日：1998-08-18

申请号：US756672

申请日：1996-11-26

申请人： Willard Earl Conley ,  James Thomas Fahey ,  Wayne Martin Moreau ,  Ratnam Sooriyakumaran ,  Kevin Michael Welsh

发明人： Willard Earl Conley ,  James Thomas Fahey ,  Wayne Martin Moreau ,  Ratnam Sooriyakumaran ,  Kevin Michael Welsh

IPC分类号： G03F7/008 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/09 ,  G03F7/095 ,  G03F7/11 ,  H01L21/027 ,  G03C5/16

CPC分类号： G03F7/091 ,  G03F7/09 ,  G03F7/0045 ,  Y10S430/168

摘要： Microlithographic methods for the use of improved underlayers for chemically amplified deep UV photoresist compositions and structures produced thereby are disclosed. The compositions comprise, in admixture, a polymeric binder, and an azide which is thermolyzed during microlithographic processing to form an amine. Films formed from the underlayer compositions of the present invention, when applied immediately under and proximate to a chemically amplified photoresist film reduce the resist structure sidewall foot or undercut caused by an adverse contact reaction.

摘要翻译： 公开了用于化学增强的深UV光致抗蚀剂组合物和由此制备的结构的改进的底层的微光刻方法。 组合物包含聚合物粘合剂和叠氮化物，其在微光刻加工中进行热分解以形成胺。 由本发明的底层组合物形成的膜当紧接在化学放大的光致抗蚀剂膜下方并且靠近化学放大的光致抗蚀剂膜时，减少由不良接触反应引起的抗蚀剂结构侧壁脚或底切。

公开(公告)号：US5663036A

公开(公告)日：1997-09-02

申请号：US354579

申请日：1994-12-13

申请人： Willard Earl Conley ,  James Thomas Fahey ,  Wayne Martin Moreau ,  Ratnam Sooriyakumaran ,  Kevin Michael Welsh

发明人： Willard Earl Conley ,  James Thomas Fahey ,  Wayne Martin Moreau ,  Ratnam Sooriyakumaran ,  Kevin Michael Welsh

IPC分类号： G03F7/008 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/09 ,  G03F7/095 ,  G03F7/11 ,  H01L21/027 ,  G03C1/492 ,  G03C1/06 ,  G03C1/52 ,  G03C1/815

CPC分类号： G03F7/091 ,  G03F7/09 ,  G03F7/0045 ,  Y10S430/168

摘要： Microlithographic methods for the use of improved underlayers for chemically amplified deep UV photoresist compositions and structures produced thereby are disclosed. The compositions comprise, in admixture, a polymeric binder, and an azide which is thermolyzed during microlithographic processing to form an amine. Films formed from the underlayer compositions of the present invention, when applied immediately under and proximate to a chemically amplified photoresist film reduce the resist structure sidewall foot or undercut caused by an adverse contact reaction.

摘要翻译： 公开了用于化学增强的深UV光致抗蚀剂组合物和由此制备的结构的改进的底层的微光刻方法。 组合物包含聚合物粘合剂和叠氮化物，其在微光刻加工中进行热分解以形成胺。 由本发明的底层组合物形成的膜当紧接在化学放大的光致抗蚀剂膜下方并且靠近化学放大的光致抗蚀剂膜时，减少由不良接触反应引起的抗蚀剂结构侧壁脚或底切。

公开(公告)号：US5644038A

公开(公告)日：1997-07-01

申请号：US616599

申请日：1996-03-15

申请人： Ari Aviram ,  William Ross Brunsvold ,  Daniel Bucca ,  Willard Earl Conley, Jr. ,  David Earle Seeger

发明人： Ari Aviram ,  William Ross Brunsvold ,  Daniel Bucca ,  Willard Earl Conley, Jr. ,  David Earle Seeger

IPC分类号： C07C309/76 ,  G03F7/022

CPC分类号： G03F7/022 ,  C07C309/76 ,  Y10S430/143 ,  Y10S430/168

摘要： Quinone diazo compounds having bonded to the diazo ring or directly bonded to a ring of the compound, certain non-metallic atoms that improve the photosensitivity thereof are provided. These quinone diazo compounds are useful as photoactive compounds in photoresist compositions, and particularly positive photoresist composition employed in x-ray or electron beam radiation. Also provided is a method for preparing compounds of the present invention.

摘要翻译： 提供了与重氮键结合或直接键合到化合物环上的喹诺酮重氮化合物，提供了提高其光敏性的某些非金属原子。 这些醌重氮化合物可用作光致抗蚀剂组合物中的光敏化合物，并且特别是用于x射线或电子束辐射的正性光致抗蚀剂组合物。 还提供了制备本发明化合物的方法。

公开(公告)号：US5783361A

公开(公告)日：1998-07-21

申请号：US794822

申请日：1997-02-04

申请人： Willard Earl Conley ,  James Thomas Fahey ,  Wayne Martin Moreau ,  Ratnam Sooriyakumaran ,  Kevin Michael Welsh

发明人： Willard Earl Conley ,  James Thomas Fahey ,  Wayne Martin Moreau ,  Ratnam Sooriyakumaran ,  Kevin Michael Welsh

IPC分类号： G03F7/008 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/09 ,  G03F7/095 ,  G03F7/11 ,  H01L21/027 ,  G03C1/492 ,  G03C1/06 ,  G03C1/52 ,  G03C1/815

CPC分类号： G03F7/091 ,  G03F7/09 ,  G03F7/0045 ,  Y10S430/168

摘要： Microlithographic methods for the use of improved underlayers for chemically amplified deep UV photoresist compositions and structures produced thereby are disclosed. The compositions comprise, in admixture, a polymeric binder, and an azide which is thermolyzed during microlithographic processing to form an amine. Films formed from the underlayer compositions of the present invention, when applied immediately under and proximate to a chemically amplified photoresist film reduce the resist structure sidewall foot or undercut caused by an adverse contact reaction.

摘要翻译： 公开了用于化学增强的深UV光致抗蚀剂组合物和由此制备的结构的改进的底层的微光刻方法。 组合物包含聚合物粘合剂和叠氮化物，其在微光刻加工中进行热分解以形成胺。 由本发明的底层组合物形成的膜当紧接在化学放大的光致抗蚀剂膜下方并且靠近化学放大的光致抗蚀剂膜时，减少由不良接触反应引起的抗蚀剂结构侧壁脚或底切。