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    Acid scavengers for use in chemically amplified photoresists
    1.
    发明授权
    Acid scavengers for use in chemically amplified photoresists 失效
    用于化学放大光致抗蚀剂的酸清除剂

    公开(公告)号：US5667938A

    公开(公告)日：1997-09-16

    申请号：US731224

    申请日：1996-10-11

    申请人： Nageshwer Rao Bantu ,  William Ross Brunsvold ,  George Joseph Hefferon ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Ratnam Sooriyakumaran ,  Dominic Changwon Yang

    发明人： Nageshwer Rao Bantu ,  William Ross Brunsvold ,  George Joseph Hefferon ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Ratnam Sooriyakumaran ,  Dominic Changwon Yang

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/039 ,  G03F7/0045

    摘要： Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.

    摘要翻译： 质子海绵，小檗碱和十六烷基三甲基氢氧化铵碱化合物用作基于改性聚羟基苯乙烯（PHS）的化学放大光致抗蚀剂的添加剂。 基础添加剂清除光致抗蚀剂中的游离酸，以保持改性PHS聚合物上的酸不稳定部分。 碱添加剂非常适合于工业加工条件，不与光致抗蚀剂组合物中的光酸化合物反应以形成将阻碍光致抗蚀剂性能的副产物，并延长光致抗蚀剂组合物的保质期。 此外，质子海绵和小檗碱碱添加剂具有与改性PHS聚合物不同的吸收光谱，因此可以容易地测定和控制光致抗蚀剂内基础添加剂的量。

    Acid Scavengers for use in chemically amplified photoresists
    2.
    发明授权
    Acid Scavengers for use in chemically amplified photoresists 失效
    用于化学放大光致抗蚀剂的酸清除剂

    公开(公告)号：US5733705A

    公开(公告)日：1998-03-31

    申请号：US730687

    申请日：1996-10-11

    申请人： Nageshwer Rao Bantu ,  William Ross Brunsvold ,  George Joseph Hefferon ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khofasteh ,  Ratnam Sooriyakumaran ,  Dominic Changwon Yang

    发明人： Nageshwer Rao Bantu ,  William Ross Brunsvold ,  George Joseph Hefferon ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khofasteh ,  Ratnam Sooriyakumaran ,  Dominic Changwon Yang

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/039 ,  G03F7/0045

    摘要： Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.

    摘要翻译： 质子海绵，小檗碱和十六烷基三甲基氢氧化铵碱化合物用作基于改性聚羟基苯乙烯（PHS）的化学放大光致抗蚀剂的添加剂。 基础添加剂清除光致抗蚀剂中的游离酸，以保持改性PHS聚合物上的酸不稳定部分。 碱添加剂非常适合于工业加工条件，不与光致抗蚀剂组合物中的光酸化合物反应以形成将阻碍光致抗蚀剂性能的副产物，并延长光致抗蚀剂组合物的保质期。 此外，质子海绵和小檗碱碱添加剂具有与改性PHS聚合物不同的吸收光谱，因此可以容易地测定和控制光致抗蚀剂内基础添加剂的量。

    Radiation sensitive silicon-containing resists
    4.
    发明授权
    Radiation sensitive silicon-containing resists 失效
    辐射敏感含硅抗蚀剂

    公开(公告)号：US06344305B1

    公开(公告)日：2002-02-05

    申请号：US09654350

    申请日：2000-09-01

    申请人： Qinghuang Lin ,  Ahmad D. Katnani ,  Douglas Charles LaTulipe, Jr. ,  David E. Seeger ,  William Ross Brunsvold ,  Ali Afzali-Ardakani

    发明人： Qinghuang Lin ,  Ahmad D. Katnani ,  Douglas Charles LaTulipe, Jr. ,  David E. Seeger ,  William Ross Brunsvold ,  Ali Afzali-Ardakani

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/0757

    摘要： A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns. The resist compositions can be used as the top imaging layer in a multilayer, including bilayer, scheme to fabricate semiconductor devices using various irradiation sources, such as mid-ultraviolet (UV), deep-UV, extreme UV, X-ray, e-beam and ion-beam irradiation.

    摘要翻译： 提供了一种高性能的含有辐射敏感性的含硅负光阻抗体以及使用含硅抗蚀剂的多层方法，包括用于制造半导体器件的双层成像。 负性含硅抗蚀剂基于通过交联剂的碳阳离子与含硅聚合物中酚基的羟基位置的反应而进行酸催化的高对比度交联的水溶性可溶性含硅酚醛聚合物 。 一种包含所述含硅聚合物树脂的化学放大的含硅负色调组合物; 至少一种交联剂; 一个酸发生器; 并提供溶剂。 含硅抗蚀剂组合物具有高硅含量并且提供优异的分辨率和构图高纵横比抗蚀剂图案的方法。 抗蚀剂组合物可以用作多层的顶部成像层，包括双层，使用各种照射源制造半导体器件的方案，例如中紫外（UV），深UV，极紫外，X射线， 光束和离子束照射。

    Radiation sensitive silicon-containing resists
    5.
    发明授权
    Radiation sensitive silicon-containing resists 失效
    辐射敏感含硅抗蚀剂

    公开(公告)号：US06187505B1

    公开(公告)日：2001-02-13

    申请号：US09241441

    申请日：1999-02-02

    申请人： Qinghuang Lin ,  Ahmad D. Katnani ,  Douglas Charles LaTulipe, Jr. ,  David E. Seeger ,  William Ross Brunsvold ,  Ali Afzali-Ardakani

    发明人： Qinghuang Lin ,  Ahmad D. Katnani ,  Douglas Charles LaTulipe, Jr. ,  David E. Seeger ,  William Ross Brunsvold ,  Ali Afzali-Ardakani

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/0757

    摘要： A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns. The resist compositions can be used as the top imaging layer in a multilayer, including bilayer, scheme to fabricate semiconductor devices using various irradiation sources, such as mid-ultraviolet (UV), deep-UV, extreme UV, X-ray, e-beam and ion-beam irradiation.

    摘要翻译： 提供了一种高性能的含有辐射敏感性的含硅负光阻抗体以及使用含硅抗蚀剂的多层方法，包括用于制造半导体器件的双层成像。 负性含硅抗蚀剂基于通过交联剂的碳阳离子与含硅聚合物中酚基的羟基位置的反应而进行酸催化的高对比度交联的水溶性可溶性含硅酚醛聚合物 。 一种包含所述含硅聚合物树脂的化学放大的含硅负色调组合物; 至少一种交联剂; 一个酸发生器; 并提供溶剂。 含硅抗蚀剂组合物具有高硅含量并且提供优异的分辨率和构图高纵横比抗蚀剂图案的方法。 抗蚀剂组合物可以用作多层的顶部成像层，包括双层，使用各种照射源制造半导体器件的方案，例如中紫外（UV），深UV，极紫外，X射线， 光束和离子束照射。