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    HIGH EFFICIENCY SOLAR CELL
    1.
    发明申请
    HIGH EFFICIENCY SOLAR CELL 审中-公开
    高效太阳能电池

    公开(公告)号：US20110061726A1

    公开(公告)日：2011-03-17

    申请号：US12948389

    申请日：2010-11-17

    申请人： Allen M. Barnett ,  David Emil Carlson ,  William Alan Doolittle ,  Christiana Beatrice Honsberg ,  Douglas Andrew Kirkpatrick

    发明人： Allen M. Barnett ,  David Emil Carlson ,  William Alan Doolittle ,  Christiana Beatrice Honsberg ,  Douglas Andrew Kirkpatrick

    IPC分类号： H01L31/06

    CPC分类号： G02B27/1006 ,  G02B27/14 ,  H01L31/0549 ,  H01L31/0687 ,  Y02E10/52 ,  Y02E10/544

    摘要： This invention relates to a high efficiency solar cell with a novel architecture. In one embodiment, the solar cell is comprised of a high energy gap cell stack and a dichroic mirror. The high energy gap cell stack is exposed to solar light before there is any splitting of the solar light into spectral components. Each cell in the high energy gap cell stack absorbs the light with photons of energy greater than or equal to its energy gap, i.e., the blue-green to ultraviolet portion of the solar light. Each cell in the high energy gap cell stack is transparent to and transmits light with photons of energy less than its energy gap. Spectral splitting is then performed by means of the dichroic mirror on the remaining light, i.e., the light transmitted by the high energy gap cell stack.

    摘要翻译： 本发明涉及具有新颖结构的高效太阳能电池。 在一个实施例中，太阳能电池由高能隙电池堆和二向色镜组成。 在将太阳能光分解成光谱分量之前，高能隙电池堆被暴露在太阳光下。 高能隙电池堆中的每个电池用能量大于或等于其能隙的能量吸收光，即太阳光的蓝绿色至紫外线部分。 高能隙电池堆中的每个电池对能量小于其能隙的光子透明并透射光。 然后通过剩余光上的分色镜，即由高能隙电池堆传输的光进行光谱分裂。

    Methods for growing a non-phase separated group-III nitride semiconductor alloy
    3.
    发明授权
    Methods for growing a non-phase separated group-III nitride semiconductor alloy 有权
    生长非相分离III族氮化物半导体合金的方法

    公开(公告)号：US09142413B2

    公开(公告)日：2015-09-22

    申请号：US13883566

    申请日：2011-11-08

    申请人： Michael William Moseley ,  William Alan Doolittle

    发明人： Michael William Moseley ,  William Alan Doolittle

    IPC分类号： H01L21/3205 ,  H01L21/205 ,  C30B23/02 ,  C30B29/40 ,  H01L21/02

    CPC分类号： C01B21/0632 ,  C01P2006/40 ,  C01P2006/90 ,  C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/2056 ,  H01L29/2003 ,  H01L29/30

    摘要： Systems and methods for MBE growing of group-III Nitride alloys, comprising establishing an average reaction temperature range from about 250 C to about 850 C; introducing a nitrogen flux at a nitrogen flow rate; introducing a first metal flux at a first metal flow rate; and periodically stopping and restarting the first metal flux according to a first flow duty cycle. According to another embodiment, the system comprises a nitrogen source that provides nitrogen at a nitrogen flow rate, and, a first metal source comprising a first metal effusion cell that provides a first metal at a first metal flow rate, and a first metal shutter that periodically opens and closes according to a first flow duty cycle to abate and recommence the flow of the first metal from the first metal source. Produced alloys include AlN, InN, GaN, InGaN, and AlInGaN.

    摘要翻译： 包括III-III族氮化物合金的MBE生长的系统和方法，包括建立约250℃至约850℃的平均反应温度范围; 在氮气流速下引入氮气通量; 以第一金属流速引入第一金属焊剂; 并且根据第一流量占空比周期性地停止和重新启动第一金属焊剂。 根据另一个实施方案，该系统包括以氮气流速提供氮气的氮源，以及第一金属源，其包括以第一金属流速提供第一金属的第一金属渗出池和第一金属快门， 根据第一流动占空比周期性地打开和关闭以消除并重新开始来自第一金属源的第一金属的流动。 生产的合金包括AlN，InN，GaN，InGaN和AlInGaN。

    HIGH EFFICIENCY SOLAR CELL
    5.
    发明申请
    HIGH EFFICIENCY SOLAR CELL 审中-公开
    高效太阳能电池

    公开(公告)号：US20090314332A1

    公开(公告)日：2009-12-24

    申请号：US12358894

    申请日：2009-01-23

    申请人： Allen M. Barnett ,  David Emil Carlson ,  William Alan Doolittle ,  Christiana Beatrice Honsberg ,  Douglas Andrew Kirkpatrick

    发明人： Allen M. Barnett ,  David Emil Carlson ,  William Alan Doolittle ,  Christiana Beatrice Honsberg ,  Douglas Andrew Kirkpatrick

    IPC分类号： H01L31/052

    CPC分类号： G02B27/1006 ,  G02B27/14 ,  H01L31/0549 ,  H01L31/0687 ,  Y02E10/52 ,  Y02E10/544

    摘要： This invention relates to a high efficiency solar cell with a novel architecture. In one embodiment, the solar cell is comprised of a high energy gap cell stack and a dichroic mirror. The high energy gap cell stack is exposed to solar light before there is any splitting of the solar light into spectral components. Each cell in the high energy gap cell stack absorbs the light with photons of energy greater than or equal to its energy gap, i.e., the blue-green to ultraviolet portion of the solar light. Each cell in the high energy gap cell stack is transparent to and transmits light with photons of energy less than its energy gap. Spectral splitting is then performed by means of the dichroic mirror on the remaining light, i.e., the light transmitted by the high energy gap cell stack.

    摘要翻译： 本发明涉及具有新颖结构的高效太阳能电池。 在一个实施例中，太阳能电池由高能隙电池堆和二向色镜组成。 在将太阳能光分解成光谱分量之前，高能隙电池堆被暴露在太阳光下。 高能隙电池堆中的每个电池用能量大于或等于其能隙的能量吸收光，即太阳光的蓝绿色至紫外线部分。 高能隙电池堆中的每个电池对能量小于其能隙的光子透明并透射光。 然后通过剩余光上的分色镜，即由高能隙电池堆传输的光进行光谱分裂。

    Systems And Methods For Growing A Non-Phase Separated Group-III Nitride Semiconductor Alloy
    6.
    发明申请
    Systems And Methods For Growing A Non-Phase Separated Group-III Nitride Semiconductor Alloy 有权
    用于生长非相分离III族氮化物半导体合金的系统和方法

    公开(公告)号：US20130244408A1

    公开(公告)日：2013-09-19

    申请号：US13883566

    申请日：2011-11-08

    申请人： Michael William Moseley ,  William Alan Doolittle

    发明人： Michael William Moseley ,  William Alan Doolittle

    IPC分类号： H01L21/205

    CPC分类号： C01B21/0632 ,  C01P2006/40 ,  C01P2006/90 ,  C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/2056 ,  H01L29/2003 ,  H01L29/30

    摘要： Systems and methods for MBE growing of group-III Nitride alloys, comprising establishing an average reaction temperature range from about 250 C to about 850 C; introducing a nitrogen flux at a nitrogen flow rate; introducing a first metal flux at a first metal flow rate; and periodically stopping and restarting the first metal flux according to a first flow duty cycle. According to another embodiment, the system comprises a nitrogen source that provides nitrogen at a nitrogen flow rate, and, a first metal source comprising a first metal effusion cell that provides a first metal at a first metal flow rate, and a first metal shutter that periodically opens and closes according to a first flow duty cycle to abate and recommence the flow of the first metal from the first metal source. Produced alloys include AlN, InN, GaN, InGaN, and AlInGaN.

    摘要翻译： 包括III-III族氮化物合金的MBE生长的系统和方法，包括建立约250℃至约850℃的平均反应温度范围; 在氮气流速下引入氮气通量; 以第一金属流速引入第一金属焊剂; 并且根据第一流量占空比周期性地停止和重新启动第一金属焊剂。 根据另一个实施方案，该系统包括以氮气流速提供氮气的氮源，以及第一金属源，其包括以第一金属流速提供第一金属的第一金属渗出池和第一金属快门， 根据第一流动占空比周期性地打开和关闭以消除并重新开始来自第一金属源的第一金属的流动。 生产的合金包括AlN，InN，GaN，InGaN和AlInGaN。