公开(公告)号：USD636704S1

公开(公告)日：2011-04-26

申请号：US29342529

申请日：2009-08-26

申请人： Won Seok Yoo ,  Jung Lul Back ,  Soon Yeol Kim

设计人： Won Seok Yoo ,  Jung Lul Back ,  Soon Yeol Kim

公开(公告)号：US07592227B2

公开(公告)日：2009-09-22

申请号：US11481928

申请日：2006-07-07

申请人： Yong-Sun Lee ,  Jai-Dong Lee ,  Bong-Hyun Kim ,  Man-Sug Kang ,  Jung-Hwan Kim ,  Hyun-Jin Shin ,  Won-Seok Yoo ,  Seung-Mok Shin

发明人： Yong-Sun Lee ,  Jai-Dong Lee ,  Bong-Hyun Kim ,  Man-Sug Kang ,  Jung-Hwan Kim ,  Hyun-Jin Shin ,  Won-Seok Yoo ,  Seung-Mok Shin

IPC分类号： H01L21/336

CPC分类号： H01L21/32105 ,  H01L21/28273 ,  H01L29/42324

摘要： Example embodiments of the present invention relate to methods of manufacturing a semiconductor device. Other example embodiments of the present invention relate to methods of manufacturing a semiconductor device having a gate electrode. In the method of manufacturing the semiconductor device, a gate electrode may be formed on a semiconductor substrate. Damage in the semiconductor substrate and a sidewall of the gate electrode may be cured, or repaired, by a radical re-oxidation process to form an oxide layer on the semiconductor substrate and the gate electrode. The radical re-oxidation process may be performed by providing a nitrogen gas onto the semiconductor substrate while increasing a temperature of the semiconductor substrate to a first temperature to passivate a surface of the gate electrode under a nitrogen gas atmosphere, providing an oxygen gas onto the semiconductor substrate while increasing the temperature from a first temperature to a second temperature to perform a first oxidation process and/or performing a second oxidation process at the second temperature.

摘要翻译： 本发明的示例性实施例涉及制造半导体器件的方法。 本发明的其它示例实施例涉及制造具有栅电极的半导体器件的方法。 在制造半导体器件的方法中，可以在半导体衬底上形成栅电极。 可以通过自由基再氧化工艺固化或修复半导体衬底和栅电极的侧壁的损伤，以在半导体衬底和栅电极上形成氧化物层。 可以通过在半导体衬底上提供氮气同时将半导体衬底的温度提高到第一温度以在氮气气氛下钝化栅电极的表面来进行自由基再氧化工艺，从而将氧气提供到 半导体衬底，同时将温度从第一温度升至第二温度，以进行第一氧化工艺和/或在第二温度下进行第二氧化工艺。

公开(公告)号：US08697570B2

公开(公告)日：2014-04-15

申请号：US12941331

申请日：2010-11-08

申请人： Taek-soo Jeon ,  Bong-hyun Kim ,  Won-seok Yoo ,  Jae-hong Seo ,  Ho-kyun An ,  Dae-hyun Kim

发明人： Taek-soo Jeon ,  Bong-hyun Kim ,  Won-seok Yoo ,  Jae-hong Seo ,  Ho-kyun An ,  Dae-hyun Kim

IPC分类号： H01L21/4763

CPC分类号： H01L23/5226 ,  H01L21/28525 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/10823 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a substrate having a conductive area, a first pattern formed on the substrate and having a contact hole through which the conductive area is exposed, and a contact plug in the contact hole. The contact plug includes first and second silicon layers. The first silicon layer, formed from a first compound including at least two silicon atoms, is formed in the contact hole to contact a top surface of the conductive area and a side wall of the first pattern. The second silicon layer, formed from a second compound including a number of silicon atoms less than the number of the silicon atoms of the first compound, is formed on the first silicon layer and fills a remaining space of the contact hole, the second silicon layer being spaced apart from the first pattern at an entrance of the contact hole.

摘要翻译： 半导体器件包括具有导电区域的基板，形成在基板上的第一图案，具有导电区域露出的接触孔和接触孔中的接触插塞。 接触插塞包括第一和第二硅层。 在包括至少两个硅原子的第一化合物形成的第一硅层形成在接触孔中以接触导电区域的顶表面和第一图案的侧壁。 在第一硅层上形成由第二化合物构成的第二硅层，该第二化合物包含少于第一化合物的硅原子数的硅原子数，并填充接触孔的剩余空间，第二硅层 在接触孔的入口处与第一图案间隔开。

公开(公告)号：US20070232396A1

公开(公告)日：2007-10-04

申请号：US10599637

申请日：2005-04-08

申请人： Won-Seok Yoo

发明人： Won-Seok Yoo

IPC分类号： G06F17/00

CPC分类号： G07F17/32 ,  G07F17/3223 ,  G07F17/3237 ,  G07F17/3239

摘要： An online game service system for randomly allocating game channels according to user behavior patterns includes a user behavior pattern database, a channel database, a channel server, and a game server so that users having the same or similar game behavior patterns may play games. The user behavior pattern database stores behavior pattern classification references and user game behavior patterns. The channel database stores a list of random channels and data on game rooms at the random channels. The channel server selects a random channel according to the user behavior pattern, provides data on game rooms generated in the selected random channel, and controls a user to enter a game room. The game server provides a game service to the users having entered game rooms, determines game behavior patterns of the users by using behavior pattern references, and stores the determined game behavior patterns in the user behavior pattern database.

摘要翻译： 用于根据用户行为模式随机分配游戏频道的在线游戏服务系统包括用户行为模式数据库，频道数据库，频道服务器和游戏服务器，以使具有相同或类似游戏行为模式的用户可以玩游戏。 用户行为模式数据库存储行为模式分类引用和用户游戏行为模式。 频道数据库在随机频道上存储游戏室的随机频道和数据列表。 频道服务器根据用户行为模式选择随机频道，提供在所选择的随机频道中产生的游戏室的数据，并控制用户进入游戏室。 游戏服务器向已经进入游戏室的用户提供游戏服务，通过使用行为模式引用来确定用户的游戏行为模式，并将确定的游戏行为模式存储在用户行为模式数据库中。

公开(公告)号：US20060108575A1

公开(公告)日：2006-05-25

申请号：US11261266

申请日：2005-10-28

申请人： Chang-Hoon Lee ,  Sang-Jin Park ,  Won-Seok Yoo ,  Kong-Soo Lee

发明人： Chang-Hoon Lee ,  Sang-Jin Park ,  Won-Seok Yoo ,  Kong-Soo Lee

IPC分类号： H01L29/08

CPC分类号： H01L27/11 ,  H01L27/1104

摘要： A method of fabricating a static random access memory device includes selectively removing an insulating film and growing a single crystalline silicon layer using selective epitaxy growth, the single crystalline silicon layer being grown in a portion from which the insulating film is removed; recessing the insulating film; and depositing an amorphous silicon layer on the single crystalline silicon layer and the insulating film, such that the amorphous silicon layer partially surrounds a top surface and side surfaces of the single crystalline silicon layer.

公开(公告)号：US07598141B2

公开(公告)日：2009-10-06

申请号：US11261266

申请日：2005-10-28

申请人： Chang-Hoon Lee ,  Sang-Jin Park ,  Won-Seok Yoo ,  Kong-Soo Lee

发明人： Chang-Hoon Lee ,  Sang-Jin Park ,  Won-Seok Yoo ,  Kong-Soo Lee

IPC分类号： H01L21/336

CPC分类号： H01L27/11 ,  H01L27/1104

摘要： A method of fabricating a static random access memory device includes selectively removing an insulating film and growing a single crystalline silicon layer using selective epitaxy growth, the single crystalline silicon layer being grown in a portion from which the insulating film is removed; recessing the insulating film; and depositing an amorphous silicon layer on the single crystalline silicon layer and the insulating film, such that the amorphous silicon layer partially surrounds a top surface and side surfaces of the single crystalline silicon layer.

摘要翻译： 一种制造静态随机存取存储器件的方法包括：使用选择性外延生长选择性地去除绝缘膜并生长单晶硅层，单晶硅层在除去绝缘膜的部分中生长; 使绝缘膜凹陷; 以及在所述单晶硅层和所述绝缘膜上沉积非晶硅层，使得所述非晶硅层部分地包围所述单晶硅层的顶表面和侧表面。

公开(公告)号：US20070078001A1

公开(公告)日：2007-04-05

申请号：US11607161

申请日：2006-12-01

申请人： Won-Seok Yoo

发明人： Won-Seok Yoo

IPC分类号： A63F9/24

CPC分类号： G07F17/32

摘要： Disclosed is a system and method for managing divided points on-line. This system manages web points and game points used in a web service and a game service and converts a user's web points into game points for update of the user's game points when the user uses the game service, and includes a user point database, a web server, a game server and a channel server. The user point database stores and manages the web points and game points for each user. The web server provides a user with the web service by referring to the web points stored in the user point database. The game server provides the user with the game service by referring to the game points stored in the user point database. The channel server provides the user with channel-related data for each game, allows the user to play a game through the game server in a specific channel selected by the user, converts the user's web points stored in the user point database into corresponding game points when the user enters the specific channel, and updates the user point database by adding the corresponding game points to the user's game points stored in the user point database.

摘要翻译： 公开了一种用于在线管理分割点的系统和方法。 该系统管理web服务和游戏服务中使用的Web点和游戏点，并且当用户使用游戏服务时，将用户的网点转换成游戏点以更新用户的游戏点，并且包括用户点数据库，web 服务器，游戏服务器和频道服务器。 用户点数据库存储和管理每个用户的网点和游戏点。 Web服务器通过参考存储在用户点数据库中的网点向用户提供web服务。 游戏服务器通过参照存储在用户点数据库中的游戏点向用户提供游戏服务。 通道服务器向用户提供每个游戏的频道相关数据，允许用户通过游戏服务器在由用户选择的特定频道中玩游戏，将存储在用户点数据库中的用户的网点转换成相应的游戏点 当用户进入特定频道时，通过将对应的游戏点添加到存储在用户点数据库中的用户游戏点来更新用户点数据库。

公开(公告)号：US20070010068A1

公开(公告)日：2007-01-11

申请号：US11481928

申请日：2006-07-07

申请人： Yong-Sun Lee ,  Jai-Dong Lee ,  Bong-Hyun Kim ,  Man-Sug Kang ,  Jung-Hwan Kim ,  Hyun-Jin Shin ,  Won-Seok Yoo ,  Seung-Mok Shin

发明人： Yong-Sun Lee ,  Jai-Dong Lee ,  Bong-Hyun Kim ,  Man-Sug Kang ,  Jung-Hwan Kim ,  Hyun-Jin Shin ,  Won-Seok Yoo ,  Seung-Mok Shin

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/32105 ,  H01L21/28273 ,  H01L29/42324

摘要： Example embodiments of the present invention relate to methods of manufacturing a semiconductor device. Other example embodiments of the present invention relate to methods of manufacturing a semiconductor device having a gate electrode. In the method of manufacturing the semiconductor device, a gate electrode may be formed on a semiconductor substrate. Damage in the semiconductor substrate and a sidewall of the gate electrode may be cured, or repaired, by a radical re-oxidation process to form an oxide layer on the semiconductor substrate and the gate electrode. The radical re-oxidation process may be performed by providing a nitrogen gas onto the semiconductor substrate while increasing a temperature of the semiconductor substrate to a first temperature to passivate a surface of the gate electrode under a nitrogen gas atmosphere, providing an oxygen gas onto the semiconductor substrate while increasing the temperature from a first temperature to a second temperature to perform a first oxidation process and/or performing a second oxidation process at the second temperature.

摘要翻译： 本发明的示例性实施例涉及制造半导体器件的方法。 本发明的其它示例实施例涉及制造具有栅电极的半导体器件的方法。 在制造半导体器件的方法中，可以在半导体衬底上形成栅电极。 可以通过自由基再氧化工艺固化或修复半导体衬底和栅电极的侧壁的损伤，以在半导体衬底和栅电极上形成氧化物层。 可以通过在半导体衬底上提供氮气同时将半导体衬底的温度提高到第一温度以在氮气气氛下钝化栅电极的表面来进行自由基再氧化工艺，从而将氧气提供到 半导体衬底，同时将温度从第一温度升至第二温度，以进行第一氧化工艺和/或在第二温度下进行第二氧化工艺。

公开(公告)号：US11147704B2

公开(公告)日：2021-10-19

申请号：US16286614

申请日：2019-02-27

申请人： Won Seok Yoo ,  Mahn June Hahn

发明人： Won Seok Yoo ,  Mahn June Hahn

IPC分类号： A61F5/02 ,  A61H1/00 ,  A61H1/02

摘要： A cervicothoracic spine restorator is disclosed. In the cervicothoracic spine restorator, a fixing structure is further included, such that relaxation of muscles such as pectoralis major muscle, pectoralis minor muscle, rectus abdominis muscle, and trapezius muscle or latissimus dorsi muscle can be easily performed. Further, the blood vessel may be expanded and the blood may be supplied smoothly to the head. This may help recovery and correction during a short correction period. There is an advantage that a separate correction mechanism, which is used for spine correction such as a abdomen band, is unnecessary.

公开(公告)号：US20190262162A1

公开(公告)日：2019-08-29

申请号：US16286614

申请日：2019-02-27

申请人： Won Seok YOO ,  Mahn June HAHN

发明人： Won Seok YOO ,  Mahn June HAHN

IPC分类号： A61F5/02 ,  A61H1/02 ,  A61H1/00

摘要： A cervicothoracic spine restorator is disclosed. In the cervicothoracic spine restorator, a fixing structure is further included, such that relaxation of muscles such as pectoralis major muscle, pectoralis minor muscle, rectus abdominis muscle, and trapezius muscle or latissimus dorsi muscle can be easily performed. Further, the blood vessel may be expanded and the blood may be supplied smoothly to the head. This may help recovery and correction during a short correction period. There is an advantage that a separate correction mechanism, which is used for spine correction such as a abdomen band, is unnecessary.